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    NAND FLASH DQS Search Results

    NAND FLASH DQS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC4011BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, 2-Input/NAND, DIP14 Visit Toshiba Electronic Devices & Storage Corporation
    TC4093BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, 2-Input/NAND, DIP14 Visit Toshiba Electronic Devices & Storage Corporation
    TC74HC00AP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Quad 2-Input/NAND, DIP14 Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G00NX Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), 2-Input/NAND, XSON6, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC7SH00FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), 2-Input/NAND, SOT-353 (USV), -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation

    NAND FLASH DQS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MT29H8G08ACAH1

    Abstract: MT29H32G08GCAH2 Micron NAND flash 32gb micron nand flash chip 8gb Micron NAND DQS Micron NAND onfi 32GB Nand flash micron nand flash chip 16gb 32G nand flash nand flash DQS
    Text: Preview‡ 8, 16, 32Gb: High Speed NAND Flash Memory Features High Speed NAND Flash Memory MT29H8G08ACAH1 MT29H16G08ECAH1 MT29H32G08GCAH2 Features Figure 1:100-Ball VBGA • Open NAND Flash Interface ONFI 2.0 compliant1 • Single-level cell (SLC) technology


    Original     		MT29H8G08ACAH1 MT29H16G08ECAH1 MT29H32G08GCAH2 100-Ball 09005aef83201856/Source: 09005aef83201860 MT29H8G08ACAH1 MT29H32G08GCAH2 Micron NAND flash 32gb micron nand flash chip 8gb Micron NAND DQS Micron NAND onfi 32GB Nand flash micron nand flash chip 16gb 32G nand flash nand flash DQS PDF

    phison

    Abstract: NAND FLASH BGA micron 100 ball BGA ONFI hynix NAND ECC hynix nand flash nand flash Micron NAND flash controller Micron NAND DQS Micron NAND onfi
    Text: ONFI Offers Easy Design, Full Features, and a Future of Innovation Open NAND Flash Interface The Open NAND Flash Interface ONFI workgroup standardized the traditional NAND Flash interface and expanded it, developing a backward-compatible synchronous interface for higher I/O


    Original     		100-ball phison NAND FLASH BGA micron 100 ball BGA ONFI hynix NAND ECC hynix nand flash nand flash Micron NAND flash controller Micron NAND DQS Micron NAND onfi PDF

    MT29C2G24MAKLAJG-75 IT

    Abstract: MT29C2G24MAKLAjg JW256
    Text: Preliminary‡ 168-Ball NAND Flash and LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29CxGxxMAxxxxx Features Figure 1: PoP Block Diagram Micron NAND Flash and LPDRAM components


    Original     		168-Ball MT29CxGxxMAxxxxx 09005aef83070ff3 168ball MT29C2G24MAKLAJG-75 IT MT29C2G24MAKLAjg JW256 PDF

    MT29F2G16AB

    Abstract: MT29C2G24MAKLAJG-6 MT29C4G48 JW256 MT29C2G48MAKLCJI-6 mt29f4g16ab MT29F4G16A MT29F2G16ABDHC mt29c MT29F2G16ABDHC-ET
    Text: Preliminary‡ 168-Ball NAND Flash and LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29CxGxxMAxxxxx Features Figure 1: PoP Block Diagram Micron NAND Flash and LPDRAM components


    Original     		168-Ball MT29CxGxxMAxxxxx 09005aef83070ff3 168ball MT29F2G16AB MT29C2G24MAKLAJG-6 MT29C4G48 JW256 MT29C2G48MAKLCJI-6 mt29f4g16ab MT29F4G16A MT29F2G16ABDHC mt29c MT29F2G16ABDHC-ET PDF

    MT29C1G24MADLAJA-6

    Abstract: Micron 512MB nand FLASH MT29C2G24MAKLAJA-6 Micron 512MB nand FLASH mcp Flash MCp nand DRAM 137-ball JW190 137-Ball MCP NAND sDR mt29c 1g nand DDR mcp
    Text: Preliminary‡ Micron Confidential and Proprietary 137-Ball NAND Flash with LP-DRAM MCP Features NAND Flash with LP-DRAM 137-Ball Multiple-Chip Package MCP MT29CxGxxMAxxxJA Current Production Part Numbers: Table 1 on page 2 Features Figure 1: • All-Micron NAND Flash and LP-DRAM


    Original     		137-Ball MT29CxGxxMAxxxJA 09005aef82ff4431 09005aef82ff448c 137ball MT29C1G24MADLAJA-6 Micron 512MB nand FLASH MT29C2G24MAKLAJA-6 Micron 512MB nand FLASH mcp Flash MCp nand DRAM 137-ball JW190 MCP NAND sDR mt29c 1g nand DDR mcp PDF

    MT29C4G48MAZBBAKQ-48 IT

    Abstract: MT29C8G96MAZBBDJV-48 IT MT29C4G96MAZBBCJG-48 mt29c4g96
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash with LPDDR PoP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package PoP Combination Memory (TI OMAP ) MT29C4G48MAZBBAKQ-48 IT: 4Gb x16 (NAND) with 2Gb x32 (LPDDR) MT29C4G96MAZBBCJG-48 IT: 4Gb x16 (NAND) with 4Gb x32 (LPDDR)


    Original     		168-Ball MT29C4G48MAZBBAKQ-48 MT29C4G96MAZBBCJG-48 MT29C8G96MAZBBDJV-48 09005aef855512a5 168ball MT29C4G48MAZBBAKQ-48 IT MT29C8G96MAZBBDJV-48 IT mt29c4g96 PDF

    MT29C2G24m

    Abstract: MT29C2G48 MT29C4G48M SMD MARKING CODE h23 MT29F4G16ABC JW256 MT29F4G16AB MT29C2G24MAKLAJG-6 MCP LPDDR 1Gb 512Mb marking k22 SMD
    Text: Preliminary‡ 168-Ball NAND Flash and LP-DRAM PoP TI-OMAP MCP Features NAND Flash and LP-DRAM 168-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package


    Original     		168-Ball 09005aef83071038/PDF: 09005aef83070ff3 168ball MT29C2G24m MT29C2G48 MT29C4G48M SMD MARKING CODE h23 MT29F4G16ABC JW256 MT29F4G16AB MT29C2G24MAKLAJG-6 MCP LPDDR 1Gb 512Mb marking k22 SMD PDF

    NANDA9R3N

    Abstract: NANDA9R TFBGA128 NANDA9R4N4 NANDA9R3N1 nanda8r3 M65KG512AM d2ed M65KD001AM TFBGA137
    Text: NANDxxxxNx Large page NAND flash memory and low power SDRAM, 1.8/2.6 V MCP and PoP Features FBGA n MCP multichip package and PoP (package on package) – NAND flash memory – 1-, 2-, 4-, 2x2-Gbit large page size NAND flash memory – 256-, 512-, 2x512-, 128+256/512-Mbit or


    Original     		2x512-, 256/512-Mbit x16/x32) TFBGA107 TFBGA137 LFBGA137 TFBGA149 VFBGA160 VFBGA152 TFBGA152 NANDA9R3N NANDA9R TFBGA128 NANDA9R4N4 NANDA9R3N1 nanda8r3 M65KG512AM d2ed M65KD001AM PDF

    NANDA9R3N0

    Abstract: NANDA9R4N4 nanda8r3
    Text: NANDxxRxNx Large page NAND flash memory and low power SDRAM, 1.8/2.6 V MCP and PoP Features • FBGA MCP multichip package and PoP (package on package) – NAND flash memory – 1-, 2-, 2x2-Gbit (x8/x16) large page size NAND flash memory – 256-, 512-, 2x512-, 128+256/512-Mbit or


    Original     		x8/x16) 2x512-, 256/512-Mbit x16/x32) TFBGA107 TFBGA137 TFBGA149 VFBGA160 TFBGA152 NANDA9R3N0 NANDA9R4N4 nanda8r3 PDF

    MT29C1G12

    Abstract: mt29c1g12ma MT29C1G12M MT29C1G smd code AA5 SMD MARKING CODE b21 MT29C2G24MAKLACG-6 smd code U21 marking aa5 mt29c1g1
    Text: Preliminary‡ 152-Ball NAND Flash and LP-DRAM PoP TI OMAP MCP Features NAND Flash and LP-DRAM 152-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package


    Original     		152-Ball 409ng 09005aef8326e5ac 09005aef8326e59a 152ball_ MT29C1G12 mt29c1g12ma MT29C1G12M MT29C1G smd code AA5 SMD MARKING CODE b21 MT29C2G24MAKLACG-6 smd code U21 marking aa5 mt29c1g1 PDF

    MT29F1G08ABCHC

    Abstract: MT29F1G08AAC MT29F1G08ABC MT29F1G08AACWP MT29F1G16abc MT29F1G08ABCH4 MT29F1G16ABCHC MT29F1G08AACH4 29F1G08 mt29f1g08
    Text: Micron Confidential and Proprietary 1Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F1G08AACWP, MT29F1G08AACH4 MT29F1G08ABCHC, MT29F1G16ABCHC, MT29F1G08ABCH4, MT29F1G16ABCH4 • Ready/busy# R/B# signal provides a hardware method for detecting operation completion


    Original     		MT29F1G08AACWP, MT29F1G08AACH4 MT29F1G08ABCHC, MT29F1G16ABCHC, MT29F1G08ABCH4, MT29F1G16ABCH4 09005aef83c2e425 MT29F1G08ABCHC MT29F1G08AAC MT29F1G08ABC MT29F1G08AACWP MT29F1G16abc MT29F1G08ABCH4 MT29F1G16ABCHC 29F1G08 mt29f1g08 PDF

    S72WS512PFFJF9GH

    Abstract: BGA 15X15 BGA 130 MCP NAND DDR 12X12 POP PACKAGE TRAY 15x15 bta 137 S72WS512PFFKFKGH N-ADQ14 NAND01
    Text: S72WS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode NOR Flash NAND Flash or NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 S72WS-P based MCP/PoP Products Cover Sheet Data Sheet Advance Information


    Original     		S72WS-P S72WS512PFFJF9GH BGA 15X15 BGA 130 MCP NAND DDR 12X12 POP PACKAGE TRAY 15x15 bta 137 S72WS512PFFKFKGH N-ADQ14 NAND01 PDF

    BGA 130 MCP NAND DDR

    Abstract: JEP95 137-Ball DSA00272754 Flash MCp nand DRAM 137-ball S72WS512PEF N-ADQ12 130 MCP NAND DDR NAND FLASH BGA Flash MCp nand DRAM 107-ball
    Text: S72WS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode NOR Flash NAND Flash or NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 S72WS-P based MCP/PoP Products Cover Sheet Data Sheet Advance Information


    Original     		S72WS-P BGA 130 MCP NAND DDR JEP95 137-Ball DSA00272754 Flash MCp nand DRAM 137-ball S72WS512PEF N-ADQ12 130 MCP NAND DDR NAND FLASH BGA Flash MCp nand DRAM 107-ball PDF

    MT29F256G08CUCCB

    Abstract: MT29F32G08CB mt29f32g08cba
    Text: Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F32G08CBACA, MT29F64G08CEACA, MT29F64G08CFACA, MT29F128G08CXACA, MT29F64G08CECCB, MT29F64G08CFACB MT29F128G08CKCCB, MT29F256G08CUCCB Features


    Original     		128Gb, 256Gb MT29F32G08CBACA, MT29F64G08CEACA, MT29F64G08CFACA, MT29F128G08CXACA, MT29F64G08CECCB, MT29F64G08CFACB MT29F128G08CKCCB, MT29F256G08CUCCB MT29F256G08CUCCB MT29F32G08CB mt29f32g08cba PDF

    Untitled

    Abstract: No abstract text available
    Text: S72WS-N Based MCPs 1.8 Volt-only Multi-Chip Product MCP x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Bus 2


    Original     		S72WS-N 16-bit PDF

    Flash MCp nand DRAM 137-ball

    Abstract: DA12A marking PP nand sdram mcp
    Text: S72WS-N Based MCPs 1.8 Volt-only Multi-Chip Product MCP x16 Flash Memory and SDRAM on Split Bus 256/512/768 Mb Simultaneous Read/Write, Burst Mode Flash Memory, 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 256/128 Mb (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Bus 2


    Original     		S72WS-N 16-bit Flash MCp nand DRAM 137-ball DA12A marking PP nand sdram mcp PDF

    Untitled

    Abstract: No abstract text available
    Text: EN71SN10E EN71SN10E 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 256-Mbit • Device Packaging - 107 balls FBGA Area: 10.5x13 mm; Height: 1.2 mm • Operating Voltage


    Original     		EN71SN10E 256-Mbit PDF

    Untitled

    Abstract: No abstract text available
    Text: EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 107 balls FBGA Area: 10.5x13 mm; Height: 1.2 mm • Operating Voltage


    Original     		EN71SN10F 512-Mbit PDF

    Untitled

    Abstract: No abstract text available
    Text: EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 130 balls FBGA Area: 8x9 mm; Height: 1.0 mm • Operating Voltage


    Original     		EN71SN10F 512-Mbit 16bit 16bit 32Down PDF

    Untitled

    Abstract: No abstract text available
    Text: EN71SN10E EN71SN10E 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 256-Mbit • Device Packaging - 130 balls FBGA Area: 8x9 mm; Height: 1.0 mm • Operating Voltage


    Original     		EN71SN10E 256-Mbit 16bit 16bit 32cations. PDF

    Untitled

    Abstract: No abstract text available
    Text: EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 107 balls FBGA Area: 10.5x13 mm; Height: 1.2 mm • Operating Voltage


    Original     		EN71SN10F 512-Mbit PDF

    Untitled

    Abstract: No abstract text available
    Text: EN71SN10E EN71SN10E 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 256-Mbit • Device Packaging - 130 balls FBGA Area: 8x9 mm; Height: 1.0 mm • Operating Voltage


    Original     		EN71SN10E 256-Mbit 16bit 16bit 32cations. PDF

    Untitled

    Abstract: No abstract text available
    Text: EN71SN10E EN71SN10E 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 256-Mbit • Device Packaging - 107 balls FBGA Area: 10.5x13 mm; Height: 1.2 mm • Operating Voltage


    Original     		EN71SN10E 256-Mbit PDF

    Untitled

    Abstract: No abstract text available
    Text: EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 130 balls FBGA Area: 8x9 mm; Height: 1.0 mm • Operating Voltage


    Original     		EN71SN10F 512-Mbit 16bit 16bit 32Down PDF