NA51 TRANSISTOR Search Results

NA51 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

NA51 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NA51 transistor Abstract: na52 transistor BV 726 C 1 Converter NA52W pnp NA52W BV 726 C Converter na51 npn BV 726 C na52 power transistor na51 Text: NATL SEMICOND {DISCRETE} 6501130 NATL CL Z CL CÎ ~2ö SEMICOND, DE I tS0113Q 0035573 T 28C DISCRETE CT1 National ÉSA Semiconductor 35573 - f - 3 in < z r\ Z Q. 10 < NA51 (NPN) 3.5Am p complementary pow er transistors NA52(PNP) features PH packages and lead coding	OCR Scan	tS0113Q O-126 O-220 T0-220 35S7b NB021EY NB122EY NB112EY NB312E NA51 transistor na52 transistor BV 726 C 1 Converter NA52W pnp NA52W BV 726 C Converter na51 npn BV 726 C na52 power transistor na51	PDF
NA51 transistor Abstract: NA51W power transistor na51 na52 transistor NA52W NA52W pnp na51 NA52U na52 na51 npn Text: NATL SEMICOND {DISCRETE} 6501130 CL Z CL NATL ~2ö SEMICOND, DE I tS0113Q 0035573 T 28C DISCRETE CT1 National ÉSA Semiconductor 35573 - f - 3 C Î in < z r\ Z Q. 10 < NA51 (NPN) NA52(PNP) 3 .5 A m p com plem entary p o w e r tra n s is to rs features [T I packages and lead coding	OCR Scan	tSD113D O-126 T0-220 O-126 Q03SS7b 10iiF 33-If NB021EY NB122EY NR001E NA51 transistor NA51W power transistor na51 na52 transistor NA52W NA52W pnp na51 NA52U na52 na51 npn	PDF
m6845 Abstract: NA51 transistor AMI 52 732 V DL651 M82530 MXI21 dl541 DF421 DF101 grid tie inverter schematics Text: “The new 0.6µm gate array and standard cell families from AMI provide outstanding quality and selection . . . setting performance standards in 0.6µm ASIC products . . . ” • 130 ps gate delays fanout = 2, interconnect length = 0mm ■ Double and Triple Metal Interconnect; up to 900,000 gate	Original	Table128, m6845 NA51 transistor AMI 52 732 V DL651 M82530 MXI21 dl541 DF421 DF101 grid tie inverter schematics	PDF
TTL 740 NAND propagation delay Abstract: NA51 equivalent transistor AMI8G65 OB83 G392 IB09X1 MG82C54 MICROCONTROLLER-8051 NA21 na52 transistor Text: "AMI’s 0.8µm Gate Array family is simply the best 0.8µm on the market . . . one of the highest performance, yet lowest cost array products available today . . ." • Designed for 3V, 5V, or 3V/5V mixed supplies ■ 210 ps gate delays fanout = 2 ■ 5,000 to 663,000 available gate densities	Original		PDF
NA21 transistor Abstract: kt 825 equivalent DF101 NA21 MGMC51 DL651 NA51 transistor power transistor na51 ami equivalent gates ami equivalent gates of each core cell Text: “The new 0.8µm Standard Cell family from AMI delivers superior performance and flexibility . . . one of the lowest cost and highest performance 0.8µm standard cell ASIC products available today . . .” • Designed for 3V, 5V, or 3V/5V mixed supplies	Original		PDF
bb 9790 schematic diagram Abstract: DIGITAL GATE EMULATOR USING 8085 TDA 1006 equivalents ami equivalent gates verilog code motor 04S75 M6845 TDB 2915 KM AMI8G34S AMI8G28S Text: Libraiy Characteristics AMERICAN MICROSYSTEMS INC. AMI8G 0.8 micron CMOS Gale Array AMI’s “AMI8Gx” series of 0.8\|im gate arrays exploits a proprietary power grid and track routing architecture on a compact, channelless, sea-of-gates design to provide one	OCR Scan	32-bits. MG65C02, MG29C01, MG29C10, MG80C85, MG82Cxx, MGMC51 Q172SÖ AMI86 DD17SbD bb 9790 schematic diagram DIGITAL GATE EMULATOR USING 8085 TDA 1006 equivalents ami equivalent gates verilog code motor 04S75 M6845 TDB 2915 KM AMI8G34S AMI8G28S	PDF
rda 5807 sp Abstract: rda 5807 rda 5807 sp fm receiver ic Elcom vhdl code M8490 IC TDA 2208 NA51 transistor datasheet nsm 3914 am 2901 verilog na44 Text: 0LFURQ &026 DWH $UUD\ 'DWD %RRN $0,/ 9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the	Original		PDF
tda 8210 Abstract: rtl 8112 NA51 transistor datasheet 8085 microprocessor simulator NA52 transistor datasheet AMI MG82C54 NA51 transistor data sheet 8 BIT ALU design with verilog/vhdl code na2x tda 4020 Text: 0LFURQ &026 DWH $UUD\ 'DWD %RRN $0,+ 9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the	Original		PDF
DIGITAL GATE EMULATOR USING 8085 Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent Text: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S	OCR Scan	AMI6G16S AMI6G33S AMI6G41S AMI6G70S AMI6G106S AMI6G150S AMI6G202S AMI6G333 AMI6G471 AMI6G603 DIGITAL GATE EMULATOR USING 8085 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent	PDF
N1702 Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922 Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961	OCR Scan	2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A N1702 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922	PDF
DL05L Abstract: lm 739 dl051d ODCSXE04 180 nm CMOS standard cell library AMI DL021D M91C360 ami 0.6 micron micron37 ami equivalent gates Text: Library Characteristics AMI AMERICAN MICROSYSTEMS, INC Description • Cost driven architecture: - Offers both 2 and 3 level metal interconnect to provide the lowest user cost for the number of gates and pads required. - Compiled memory blocks on standard cells are	OCR Scan	2Kx32 16Kx32 256x16 R04cwxyz, R06cwxyz 4D55c DL05L lm 739 dl051d ODCSXE04 180 nm CMOS standard cell library AMI DL021D M91C360 ami 0.6 micron micron37 ami equivalent gates	PDF
NA2X Abstract: 16 BIT ALU design with verilog/vhdl code QN-08 1329 vhdl code gold sequence code tda 2030 ic 5 pins AMI 9198 na44 MG82C54 32 BIT ALU design with verilog/vhdl code 8085 memory organization Text: 0LFURQ &026 6WDQGDUG &HOO 'DWD %RRN $0,+6 9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the	Original		PDF
schematic diagram online UPS Abstract: na44 AMI 9198 NA51 MG82C54 32 BIT ALU design with verilog/vhdl code book national semiconductor AMI 8232 AMIS 690 DF411 Text: 0LFURQ &026 6WDQGDUG &HOO 'DWD %RRN $0,/6 9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the	Original		PDF
tda 8210 Abstract: M82530 rtl 8112 MG82C54 32 BIT ALU design with verilog/vhdl code AMI 9198 NA72 na51 datasheet df402 DL002 Text: 0LFURQ &026 6WDQGDUG &HOO 'DWD %RRN $0,+6 9ROW Copyright  1998 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the	Original		PDF