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Micron Technology Inc EDL5416CDPA-75-F-D MOBILE DDR 512M 32MX16 FBGA - Trays (Alt: EDL5416CDPA-75-F-D)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	EDL5416CDPA-75-F-D	Tray			1,680	1 - 10 - 100 - 1000 - 10000 -	Get Quote

DL541 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
DL541D		Unknown	Microprocessor and Peripheral Components		Scan	PDF
DL541D		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF

DL541 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
m6845 Abstract: NA51 transistor AMI 52 732 V DL651 M82530 MXI21 dl541 DF421 DF101 grid tie inverter schematics Text: “The new 0.6µm gate array and standard cell families from AMI provide outstanding quality and selection . . . setting performance standards in 0.6µm ASIC products . . . ” • 130 ps gate delays fanout = 2, interconnect length = 0mm ■ Double and Triple Metal Interconnect; up to 900,000 gate	Original	Table128, m6845 NA51 transistor AMI 52 732 V DL651 M82530 MXI21 dl541 DF421 DF101 grid tie inverter schematics	PDF
bb 9790 schematic diagram Abstract: DIGITAL GATE EMULATOR USING 8085 TDA 1006 equivalents ami equivalent gates verilog code motor 04S75 M6845 TDB 2915 KM AMI8G34S AMI8G28S Text: Libraiy Characteristics AMERICAN MICROSYSTEMS INC. AMI8G 0.8 micron CMOS Gale Array AMI’s “AMI8Gx” series of 0.8\|im gate arrays exploits a proprietary power grid and track routing architecture on a compact, channelless, sea-of-gates design to provide one	OCR Scan	32-bits. MG65C02, MG29C01, MG29C10, MG80C85, MG82Cxx, MGMC51 Q172SÖ AMI86 DD17SbD bb 9790 schematic diagram DIGITAL GATE EMULATOR USING 8085 TDA 1006 equivalents ami equivalent gates verilog code motor 04S75 M6845 TDB 2915 KM AMI8G34S AMI8G28S	PDF
TTL 740 NAND propagation delay Abstract: NA51 equivalent transistor AMI8G65 OB83 G392 IB09X1 MG82C54 MICROCONTROLLER-8051 NA21 na52 transistor Text: "AMI’s 0.8µm Gate Array family is simply the best 0.8µm on the market . . . one of the highest performance, yet lowest cost array products available today . . ." • Designed for 3V, 5V, or 3V/5V mixed supplies ■ 210 ps gate delays fanout = 2 ■ 5,000 to 663,000 available gate densities	Original		PDF
DL074D Abstract: SN8400N D100D E412D sn8404n D204D E355D D410D DS8205D D147D Text: RFT D100D E100D D103D E103D D104D E104D D108D E108D D110D E110D D120D E120D D121D E121D D122D D123D D126D E126D D130D E130D D140D E140D D146D E146D D147D E147D D150D E150D D151D E151D D153D E153D D154D E154D D160D E160D D172D E172D D174D E174D D175D E175D	Original	D100D E100D D103D E103D D104D E104D D108D E108D D110D E110D DL074D SN8400N D100D E412D sn8404n D204D E355D D410D DS8205D D147D	PDF
NA21 transistor Abstract: kt 825 equivalent DF101 NA21 MGMC51 DL651 NA51 transistor power transistor na51 ami equivalent gates ami equivalent gates of each core cell Text: “The new 0.8µm Standard Cell family from AMI delivers superior performance and flexibility . . . one of the lowest cost and highest performance 0.8µm standard cell ASIC products available today . . .” • Designed for 3V, 5V, or 3V/5V mixed supplies	Original		PDF