NA21 TRANSISTOR Search Results

NA21 TRANSISTOR Result Highlights (6)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

NA21 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NA21 transistor Abstract: kt 825 equivalent DF101 NA21 MGMC51 DL651 NA51 transistor power transistor na51 ami equivalent gates ami equivalent gates of each core cell Text: “The new 0.8µm Standard Cell family from AMI delivers superior performance and flexibility . . . one of the lowest cost and highest performance 0.8µm standard cell ASIC products available today . . .” • Designed for 3V, 5V, or 3V/5V mixed supplies	Original	PDF
TTL 740 NAND propagation delay Abstract: NA51 equivalent transistor AMI8G65 OB83 G392 IB09X1 MG82C54 MICROCONTROLLER-8051 NA21 na52 transistor Text: "AMI’s 0.8µm Gate Array family is simply the best 0.8µm on the market . . . one of the highest performance, yet lowest cost array products available today . . ." • Designed for 3V, 5V, or 3V/5V mixed supplies ■ 210 ps gate delays fanout = 2 ■ 5,000 to 663,000 available gate densities	Original	PDF
0.5um amis cmos Abstract: AMI500XXXX rom 512x4 AMI500HXSC FPGA 144 CPGA 172 PLCC ASIC 135C AMI500MXSC AMI500SXSC DF101 NA21 Text: 0.5 Micron CMOS Standard Cell Data Book AMI500XXXX 5.0 Volt Revision 1.1 Copyright  2002 AMI Semiconductor, Inc. AMIS . All rights reserved. Trademarks registered. Information furnished by AMIS in this publication is believed to be accurate. Devices sold by AMIS are covered by the	Original	PDF	AMI500XXXX 0.5um amis cmos AMI500XXXX rom 512x4 AMI500HXSC FPGA 144 CPGA 172 PLCC ASIC 135C AMI500MXSC AMI500SXSC DF101 NA21
0.5um amis cmos Abstract: AMI350LXSC AMI350XXXX DF101 NA21 NA22 135C AMI350HXSC AMI350MXSC micron lable information Text: 0.35 Micron CMOS Standard Cell Data Book AMI350XXXX 3.3 Volt Revision 1.1 Copyright  2002 AMI Semiconductor, Inc. AMIS . All rights reserved. Trademarks registered. Information furnished by AMIS in this publication is believed to be accurate. Devices sold by AMIS are covered by the	Original	PDF	AMI350XXXX 0.5um amis cmos AMI350LXSC AMI350XXXX DF101 NA21 NA22 135C AMI350HXSC AMI350MXSC micron lable information
AMI500XXXX Abstract: AMI500HXSC micron lable information 135C AMI500HXPR AMI500HXPS AMI500MXSC AMI500SXSC NA21 NA22 Text: 0.5 Micron CMOS Standard Cell Data Book AMI500XXXX 5.0 Volt Revision 1.1 Copyright  2002 AMI Semiconductor, Inc. AMIS . All rights reserved. Trademarks registered. Information furnished by AMIS in this publication is believed to be accurate. Devices sold by AMIS are covered by the	Original	PDF	AMI500XXXX AMI500XXXX AMI500HXSC micron lable information 135C AMI500HXPR AMI500HXPS AMI500MXSC AMI500SXSC NA21 NA22
m6845 Abstract: NA51 transistor AMI 52 732 V DL651 M82530 MXI21 dl541 DF421 DF101 grid tie inverter schematics Text: “The new 0.6µm gate array and standard cell families from AMI provide outstanding quality and selection . . . setting performance standards in 0.6µm ASIC products . . . ” • 130 ps gate delays fanout = 2, interconnect length = 0mm ■ Double and Triple Metal Interconnect; up to 900,000 gate	Original	PDF	Table128, m6845 NA51 transistor AMI 52 732 V DL651 M82530 MXI21 dl541 DF421 DF101 grid tie inverter schematics
rda 5807 sp Abstract: rda 5807 rda 5807 sp fm receiver ic Elcom vhdl code M8490 IC TDA 2208 NA51 transistor datasheet nsm 3914 am 2901 verilog na44 Text: 0LFURQ &026 DWH $UUD\ 'DWD %RRN $0,/ 9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the	Original	PDF
tda 8210 Abstract: rtl 8112 NA51 transistor datasheet 8085 microprocessor simulator NA52 transistor datasheet AMI MG82C54 NA51 transistor data sheet 8 BIT ALU design with verilog/vhdl code na2x tda 4020 Text: 0LFURQ &026 DWH $UUD\ 'DWD %RRN $0,+ 9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the	Original	PDF
NA2X Abstract: 16 BIT ALU design with verilog/vhdl code QN-08 1329 vhdl code gold sequence code tda 2030 ic 5 pins AMI 9198 na44 MG82C54 32 BIT ALU design with verilog/vhdl code 8085 memory organization Text: 0LFURQ &026 6WDQGDUG &HOO 'DWD %RRN $0,+6 9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the	Original	PDF
schematic diagram online UPS Abstract: na44 AMI 9198 NA51 MG82C54 32 BIT ALU design with verilog/vhdl code book national semiconductor AMI 8232 AMIS 690 DF411 Text: 0LFURQ &026 6WDQGDUG &HOO 'DWD %RRN $0,/6 9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the	Original	PDF
tda 8210 Abstract: M82530 rtl 8112 MG82C54 32 BIT ALU design with verilog/vhdl code AMI 9198 NA72 na51 datasheet df402 DL002 Text: 0LFURQ &026 6WDQGDUG &HOO 'DWD %RRN $0,+6 9ROW Copyright  1998 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the	Original	PDF
8085 mini projects Abstract: full subtractor circuit using decoder and nand ga DF102 ic tda 2030 8085 mini projects with low budget AMI 9198 na44 DF422 16 BIT ALU design with verilog/vhdl code AMI 8232 Text: 0LFURQ &026 6WDQGDUG &HOO 'DWD %RRN $0,/6 9ROW Copyright  1999 American Microsystems, Inc. AMI . All rights reserved. Trademarks registered. Information furnished by AMI in this publication is believed to be accurate. Devices sold by AMI are covered by the	Original	PDF
bb 9790 schematic diagram Abstract: DIGITAL GATE EMULATOR USING 8085 TDA 1006 equivalents ami equivalent gates verilog code motor 04S75 M6845 TDB 2915 KM AMI8G34S AMI8G28S Text: Libraiy Characteristics AMERICAN MICROSYSTEMS INC. AMI8G 0.8 micron CMOS Gale Array AMI’s “AMI8Gx” series of 0.8\|im gate arrays exploits a proprietary power grid and track routing architecture on a compact, channelless, sea-of-gates design to provide one	OCR Scan	PDF	32-bits. MG65C02, MG29C01, MG29C10, MG80C85, MG82Cxx, MGMC51 Q172SÖ AMI86 DD17SbD bb 9790 schematic diagram DIGITAL GATE EMULATOR USING 8085 TDA 1006 equivalents ami equivalent gates verilog code motor 04S75 M6845 TDB 2915 KM AMI8G34S AMI8G28S
DIGITAL GATE EMULATOR USING 8085 Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent Text: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S	OCR Scan	PDF	AMI6G16S AMI6G33S AMI6G41S AMI6G70S AMI6G106S AMI6G150S AMI6G202S AMI6G333 AMI6G471 AMI6G603 DIGITAL GATE EMULATOR USING 8085 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent

hep 154 silicon diode Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This	OCR Scan	PDF	MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
triac zd 607 Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published	OCR Scan	PDF	thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p