N9CC
Abstract: FDMS3606AS 150 mh inductor
Text: FDMS3606AS PowerTrench Power Stage 30 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
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FDMS3606AS
FDMS3606AS
N9CC
150 mh inductor
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FDMS3606AS
Abstract: No abstract text available
Text: FDMS3606AS PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
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Original
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PDF
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FDMS3606AS
FDMS3606AS
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N9CC
Abstract: No abstract text available
Text: FDMS3606AS PowerTrench Power Stage 30 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
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Original
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PDF
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FDMS3606AS
N9CC
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Untitled
Abstract: No abstract text available
Text: FDMS3606S PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally
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Original
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PDF
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FDMS3606S
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