WTVA0300N07SMTF
Abstract: WTVA0300N07 TVA0500N07 fx090 TVA0600N 3N7 diode tva0600 WTVA TVA0600N07 WTVA0300N07S
Text: 4.21.2010 DATA SHEET WTVAXX00N0XSMTF FEATURES • • • • • • • • • • • APPLICATIONS Wide Band DC – 20GHz True Surface Mount Package Small Footprint 0.075 X 0.060 Replaces AGC loops with a single device Available in 3, 4, 5,and 6 dB in N3, N5, and N7 shift
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WTVAXX00N0XSMTF
20GHz
WTVAXX00N0XSMTF
WTVA0300N07SMTF
WTVA0300N07
TVA0500N07
fx090
TVA0600N
3N7 diode
tva0600
WTVA
TVA0600N07
WTVA0300N07S
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Untitled
Abstract: No abstract text available
Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9BN5 Microcontroller D ATA SHE E T D S -LM 3S 9B N5 - 9 9 7 0 C opyri ght 200 7-2011 Texas Instruments Incorporated Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments
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Abstract: No abstract text available
Text: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9BN5 Microcontroller D ATA SHE E T D S -LM3S 9B N5 - 1 3 4 4 2 . 2 5 4 9 S P M S 213B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated
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Abstract: No abstract text available
Text: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9BN5 Microcontroller D ATA SHE E T D S -LM3S 9B N5 - 1 3 4 4 2 . 2 5 4 9 S P M S 213B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated
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Abstract: No abstract text available
Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9BN5 Microcontroller D ATA SHE E T D S -LM3S 9B N5 - 11 4 2 5 C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments
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IC1340
Abstract: No abstract text available
Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9BN5 Microcontroller D ATA SHE E T D S -LM3S 9B N5 - 11 4 2 5 C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2012 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments
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Abstract: No abstract text available
Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S9BN5 Microcontroller D ATA SHE E T D S -LM3S 9B N5 - 1 5 8 5 2 . 2 7 4 3 S P M S 213C C o p yri g h t 2 0 07-2014 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2014 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments
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n7 transistor
Abstract: marking n5 amplifier N6 Amplifier marking n6 transistor amplifier marking code n6 transistor N6 marking N7 2SC1654 sot-23 Marking N5 Marking N5
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23
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2SC1654
OT-23
BL/SSSTC096
n7 transistor
marking n5 amplifier
N6 Amplifier
marking n6 transistor
amplifier marking code n6
transistor N6
marking N7
2SC1654
sot-23 Marking N5
Marking N5
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC1654 TRANSISTOR NPN SOT–23 FEATURES High Frequency Power Amplifier Application Power Swithing Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
2SC1654
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Untitled
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23
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2SC1654
OT-23
BL/SSSTC096
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PM2-LH10
Abstract: photoelectric sensor circuit diagram light dark sensor circuit pm2-lf10 PM2-LH10-L N4 Amplifier CN-13-C1 sensor 13 L shock sensor amplifier zener diode code color
Text: PHOTOELECTRIC SENSORS PM2 SERIES MS-AJ Sensor Mounting Stand Convergent Reflective Micro Photoelectric Sensor PM2 Micro PM Convergent Reflection Sensing Ensures Stable Detection CHX-SC2 SU-7/SH SS-A5 Sensor Checker Amplifier-separated Type VF NX5 Multi-voltage Type
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PM2-LL10-C1
PM2-LL10B-C1
PM2-LH10
photoelectric sensor circuit diagram
light dark sensor circuit
pm2-lf10
PM2-LH10-L
N4 Amplifier
CN-13-C1
sensor 13 L
shock sensor amplifier
zener diode code color
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ISV149
Abstract: 27mhz remote control transmitter circuit FOR CAR 27mhz remote control IC MCD2006 8002 AUDIO amplifier MCD2006G fm baby monitor circuit 49MHz FM transceiver PLL VCO 27MHz fm baby monitor
Text: MC Devices General Description Features MCD2006G/S is a set of transmit ICs for FM/FSK wireless transceiver intended for use in the VHF band, includes two ICs, MCD2006G and MCD2006S. The ICs contain an integrated VCO, a RF power amplifier, a reference crystal oscillator,
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MCD2006G/S
MCD2006G
MCD2006S.
MCD2006G:
110MHz
MCD2006S:
27MHz
25MHz
ISV149
27mhz remote control transmitter circuit FOR CAR
27mhz remote control IC
MCD2006
8002 AUDIO amplifier
fm baby monitor circuit
49MHz FM transceiver
PLL VCO 27MHz
fm baby monitor
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marking N5 mmic
Abstract: mmic n5 marking n5 amplifier RF TRANSISTOR 586 EDS-101105 NGA-586 RF amplifier GHz driver n5 359 rf amplifier marking n5 SIRENZA MARKING
Text: NGA-586 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with
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NGA-586
NGA-586
EDS-101105
marking N5 mmic
mmic n5
marking n5 amplifier
RF TRANSISTOR 586
RF amplifier GHz
driver n5 359
rf amplifier marking n5
SIRENZA MARKING
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NGA-589
Abstract: marking n5 amplifier 6.0 GHZ marking n5 amplifier
Text: Product Description Stanford Microdevices NGA-589 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with excellent thermal perfomance. The heterojunction increases
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NGA-589
NGA-589
EDS-100376
marking n5 amplifier 6.0 GHZ
marking n5 amplifier
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marking N5 mmic
Abstract: marking n5 amplifier NGA-589 marking n5 amplifier 6.0 GHZ mmic n5
Text: NGA-589 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-589 is a high performance InGaP/ GaAs HBT MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance
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NGA-589
NGA-589
NGA589
EDS-100376
marking N5 mmic
marking n5 amplifier
marking n5 amplifier 6.0 GHZ
mmic n5
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SIRENZA MARKING
Abstract: No abstract text available
Text: NGA-586 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with
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NGA-586
NGA-586
EDS-101105
SIRENZA MARKING
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Untitled
Abstract: No abstract text available
Text: NGA-586 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with
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NGA-586
NGA-586
EDS-101105
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NGA-586
Abstract: EDS-101105 marking n5 amplifier marking n5 DBM
Text: Product Description Stanford Microdevices NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with excellent thermal perfomance. The heterojunction increases
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NGA-586
NGA-586
EDS-101105
marking n5 amplifier
marking n5 DBM
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LE-12T
Abstract: marking N5 mmic marking n5 amplifier
Text: NGA-589 Product Description DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier High Gain : 19.2 dB at 1950 MHz Operates From Single Supply Low Thermal Resistance Package T -20 Applications LE T ORL -30 6 PA Driver Amplifier Cellular, PCS, GSM, UMTS
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NGA-589
NGA589
EDS-100376
LE-12T
marking N5 mmic
marking n5 amplifier
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N7 thermistor
Abstract: 20/shicoh n7
Text: DATA BOOK Thin Film Components Variable Chip Attenuators SUSUMU CO.,LTD. Variable Chip Attenuators Structure Structure :Combine a NTC at the center of a thin film chip attenuator in parallel. Protection film Thermistor Resistor Resistance film Electrode grounded terminal
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PBX1632S
PXV1220S
PBV1632S
PBV1632S-4dB-N4
20pcs)
PBV1632S-6dB-N4
N7 thermistor
20/shicoh n7
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EDS-101105
Abstract: NGA-586 transistor c 6093
Text: Preliminary Preliminary Product Description Stanford Microdevices’ NGA-586 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for
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NGA-586
DC-6000
19ess
EDS-101105
transistor c 6093
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bsc 68e
Abstract: 2N5684 motorola 2N5685 MOTOROLA 2N5686 2N5684 2N5685 3015 hj N5685 J5685 PNP 2N5684
Text: MOTOROLA O rder this docum ent by 2N5684/D SEMICONDUCTOR TECHNICAL DATA PNP 2 N 56 84 High-C urrent Com plem entary Silicon Power Transistors NPN 2 N 56 85 . . . designed for use in high-pow er amplifier and switching circuit applications. • • • 2 N5 6 8 6 *
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2N5684/D
2N5685
2N5684
2N5686
2N5686
97A-05
O-204AE
bsc 68e
2N5684 motorola
2N5685 MOTOROLA
3015 hj
N5685
J5685
PNP 2N5684
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Diode LT n5
Abstract: No abstract text available
Text: I HITACHI 2 S B 1 1 6 SILICON PNP TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER e 13X X I Raw 2. "»iiçtwir (Fiaogci .V Knww Í[jiríten\í<>n5; <r. null (JEDEC TO-2ZOAB) I ABSOLUTE MAXIMUM RATINGS ,Ta=25*C) Item 2SB1 106 Symbol Unit Collector to to«: voltage
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2SB11Ü
Diode LT n5
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2N5518
Abstract: 2N551 2N5521 2N5515 2N5516 2N5517 2N5519 2N5520 2N5515-2N5524 200fia
Text: □1 G E SOLI» STATE DE I 3Û7SGÛ1 D011D04 T " — 2* f — iL y «• N IO K> z « I m 2N5515-2N5524 Dual N-Channel JF E T Low Noise Amplifier ABSOLUTE MAXIMUM RATINGS n FEATURES IO • Tight Temperature Tracking M • Tight Matching Ta = 25°C unless otherwise specified
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2N5515-2N5524
D011D04
6037-2N5515-19
6019-2N5520-24
10sec)
250mW
375mW
200HA
2N5518
2N551
2N5521
2N5515
2N5516
2N5517
2N5519
2N5520
2N5515-2N5524
200fia
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