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    N4004 DIODE Search Results

    N4004 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    N4004 DIODE Price and Stock

    Hirschmann Electronics GmbH & Co Kg G 4 W 1 F 1N4004 DIODE ME

    Sensor Cables / Actuator Cables
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics G 4 W 1 F 1N4004 DIODE ME 3
    • 1 $9.63
    • 10 $8.38
    • 100 $6.91
    • 1000 $5.74
    • 10000 $5.74
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    Hirschmann Electronics GmbH & Co Kg GM 209 NJ W/1N4004 DIODE ME

    Sensor Cables / Actuator Cables
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GM 209 NJ W/1N4004 DIODE ME
    • 1 $8.28
    • 10 $7.2
    • 100 $5.94
    • 1000 $4.93
    • 10000 $4.93
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    Hirschmann Electronics GmbH & Co Kg GDM 2009 J W/1N4004 DIODE ME

    Sensor Cables / Actuator Cables
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GDM 2009 J W/1N4004 DIODE ME
    • 1 $8.45
    • 10 $7.4
    • 100 $5.99
    • 1000 $4.93
    • 10000 $4.93
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    N4004 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    n4004 diode

    Abstract: n4005 N4002 diode N4003GL diode n4002 N4004 N4003 diode 1N4001 specifications DIODE 1N4001 WORKING n4005 diode
    Text: 1N4001 G/L—1N4007G/L Vishay Lite-On Power Semiconductor 1.0A Glass Passivated Rectifier Features • Glass passivated die construction • Diffused junction • High current capability and low forward voltage drop • Surge overload rating to 30A peak •


    OCR Scan     		PDF 1N4001 1N4007G/L DO-41 N4002 N4003 N4004 N4005 N4006 N4007G n4004 diode N4002 diode N4003GL diode n4002 diode 1N4001 specifications DIODE 1N4001 WORKING n4005 diode

    N4001 diode

    Abstract: DIODE n4007 n4007 diode diode n4001 n4004 diode n4005 N4007 N4002 diode N4003 diode 1N4001 specifications
    Text: 1N4001/L-1N4007/L Vishay Lite-On Power Semiconductor ▼ 1.OARectifier Features • Diffused junction • High current capability and low forw ard voltage drop • Surge overload rating to 3 0A peak • Low reverse leakage current • Plastic m aterial - UL R ecognition flam m ability


    OCR Scan     		PDF 1N4001/L-1N4007/L DO-41 N4001/L N4002/L N4003/L N4004/L N4005/L N4006/L N4007/L D-74025 N4001 diode DIODE n4007 n4007 diode diode n4001 n4004 diode n4005 N4007 N4002 diode N4003 diode 1N4001 specifications

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS ICs for Communications Analog Network Interface Circuit AN 1C PSB 4450 Version 1.1 PSB 4451 Version 1.1 Preliminary Data Sheet 02.99 DS 4 Revision History: Current Version: 02.99 Previous Version: none Page Page in previous (in current Version Version)


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    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


    OCR Scan     		PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor