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    HN3C12FU

    Abstract: No abstract text available
    Text: TO SH IBA N3C12FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C12FU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 i 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL


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