HN3C12FU
Abstract: No abstract text available
Text: TO SH IBA HN3C12FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C12FU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 i 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL
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HN3C12FU
HN3C12FU
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN3C12FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C12FU V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS U nit in mm 2.1 ± 0.1 • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)
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HN3C12FU
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Untitled
Abstract: No abstract text available
Text: TO SHIBA HN3C12FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 C 1 2 FU Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • 2-1 + 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)
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HN3C12FU
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Untitled
Abstract: No abstract text available
Text: HN3C12FU TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3ri7Fll VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage
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HN3C12FU
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HN3C12FU
Abstract: No abstract text available
Text: TOSHIBA HN3C12FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C12FU V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS U nit in mm 2.1 ± 0.1 • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)
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OCR Scan
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HN3C12FU
HN3C12FU
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