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    N38 Q TRANSISTOR Search Results

    N38 Q TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    N38 Q TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    n38 transistor

    Abstract: N38 Q TRANSISTOR N38 E 38n38 n38a
    Text: 2SK3439 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOS 41 2SK3439 TENTATIVE INDUSTRIAL HIGH SPEED , HIGH CURRENT SWITCHING APPLICATIONS. a p p l ic a t i o n s _ UNIT ; DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVË APPLICATIONS


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    2SK3439 n38 transistor N38 Q TRANSISTOR N38 E 38n38 n38a PDF

    n38 transistor

    Abstract: gg3m BFG590 philips MATV amplifiers
    Text: PhjjjP^ jJjjÇonductors _ bfc.53^31 OÜ314b4 45D HIAPX NPN 8 GHz wideband transistor ^ BFG590; BFG590/X; BFG590/XR N APIER PHILIPS/DISCRETE blE »• PINNING FEATURES DESCRIPTION PIN • High power gain BFG590 Fig.1 Code: N38 • Low noise figure • High transition frequency


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    BFG590; BFG590/X; BFG590/XR BFG590 OT143 BFG590 0Q314bS n38 transistor gg3m philips MATV amplifiers PDF

    n20 ic protector

    Abstract: ICP-F10 ACCI ICP-N38 ICP-S2.3 ICP-N50 icp-s1.8 ICP-N25 ICPF25 ICP-F50
    Text: Transistors 1C protector Circuit protection elements •C irc u it protection elements ROHM circuit protectors protect semiconductors and their circuits by means of an excellent cutoff capability. Acci­ dents due to load shorts which destroy IC’s and valuable LSI’s are too numerous to count. Regardless of whether


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    ICP-N25, ICP-F25 ICP-N38, ICP-F38 ICP-N50, ICP-F50 10/N15/N20/N25/N38/N50/N70 ICP-F10/F15/F20/F25/F38/F50/F70 ICP-N70, ICP-F70 n20 ic protector ICP-F10 ACCI ICP-N38 ICP-S2.3 ICP-N50 icp-s1.8 ICP-N25 ICPF25 ICP-F50 PDF

    transistor N43

    Abstract: 4083C
    Text: HIGH PERFORMANCE ANALOG iNTEOTATÊDCMCUfTS F eatu res Current Mode Four Quadrant Multiplier G eneral D escrip tion T he 4083C m akes use of an E lantec fully com plim entary oxide isolated bipolar process to produce a p a te n t pending cu rren t in, cu rren t out four q uadrant m ultiplier. In p u t and o u tp u t signal


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    EL4083C ixin17 VFI10 VFI12 VFI13 VFI14 VFI15 VFI16 VFI17 transistor N43 4083C PDF

    ICP-N38

    Abstract: ICP-F15 ICP-N50 ICP-N25 ICP-F25 icp n15 circuit protector ICP-N15 ICP-F50 icpn icp-s2.3
    Text: yi Circuit Protection Elements • III II I I I •R O H M ’s Circuit Protection Elements ROHM overcurrent protection elements are in lightweight, small package, offering low internal impedance against -n:; i current, but high resistance against cut off current. They positively protect semiconductors such as ICs, LSIs,


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    ICP-F10 ICP-F15 ICP-F20 ICP-F25 ICP-F38 ICP-F50 ICP-F70 ICP-N10 ICP-N15 ICP-N20 ICP-N38 ICP-N50 ICP-N25 icp n15 circuit protector icpn icp-s2.3 PDF

    JCP-N15

    Abstract: CPN38 ICP-F25 ICP-N25 N25 ICP ICP-F50 ICP-F10 icp-s1.8 ICP-N70 ICP-N50
    Text: ROHRI Circuit Protection Elements •R O H M ’s Circuit Protection Elements RO HM overcurrent protection elements are in lightweight, small package, offering low internal impedance against rated current, but high resistance against cut off current. They positively protect semiconductors such as ICs, LSIs,


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    E107856) ICP-F10 ICP-F15 ICP-F20 ICP-F25 CP-F38 ICP-F50 ICP-F70 JCP-N15 ICP-N25 CPN38 N25 ICP icp-s1.8 ICP-N70 ICP-N50 PDF

    SL 100 NPN Transistor

    Abstract: n38 transistor 100 n38 transistor base pin 4 pin dual-emitter SL 100 NPN Transistor base emitter collector BFG590 RF TRANSISTOR 2.5 GHZ s parameter sot143r transistor
    Text: Philips Semiconductors Product specification BFG590; BFG590/X; BFG590/XR NPN 5 GHz wideband transistor FEATURES MARKING • High power gain TYPE NUMBER • Low noise figure BFG590 N38 • High transition frequency BFG590/X N44 • Gold metallization ensures


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    BFG590; BFG590/X; BFG590/XR OT143 OT143R BFG590 BFG590/X BFG590/XR BFG590 711DflSb SL 100 NPN Transistor n38 transistor 100 n38 transistor base pin 4 pin dual-emitter SL 100 NPN Transistor base emitter collector RF TRANSISTOR 2.5 GHZ s parameter sot143r transistor PDF

    BFG590

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1995 Sep 19 Philips Sem iconductors 1998 Oct 02 PHILIPS Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X FEATURES PINNING • High pow er gain DESCRIPTION


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    BFG590; BFG590/X BFG590 125104/00/03/pp12 BFG590 PDF

    N38 transistor

    Abstract: philips MATV amplifiers BFG590
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D071 BFG590; BFG590/X NPN 5 GHz wideband transistors Product specification Supersedes data of 1995 Sep 19 1998 Oct 02 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590; BFG590/X


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    M3D071 BFG590; BFG590/X BFG590 SCA60 125104/00/03/pp12 N38 transistor philips MATV amplifiers BFG590 PDF

    N1702

    Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
    Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961


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    2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A N1702 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922 PDF

    transistor P397

    Abstract: transistor P479 P449 p331 TRANSISTOR transistor k38 v6 transistor P519 am2 am3 p055 power transistor f AJ38 w38 transistor
    Text: MSX532 Matrix Switch Preliminary Data Sheet Features Description • • The MSX family of SRAM-based bit-oriented switching devices offers flow-through NRZ datarates of 300Mbps and registered clock frequencies of 200MHz. The 532 I/O Buffers IOBs are individually configured. The IOBs can be connected


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    MSX532 200MHz 300Mbps MKT-MSX532-DS transistor P397 transistor P479 P449 p331 TRANSISTOR transistor k38 v6 transistor P519 am2 am3 p055 power transistor f AJ38 w38 transistor PDF

    w34 transistor

    Abstract: IN118 IN125 IN19IN20 AB-39
    Text: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable 256 configurable I/O ports – 128 dedicated differential input ports


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    OCX256 85Gb/s all202593, MKT-OCX256-DS w34 transistor IN118 IN125 IN19IN20 AB-39 PDF

    fairchild aa35

    Abstract: Fairchild F8 A38 fairchild fairchild Af34 fairchild Af35 w38 transistor fairchild AG6 diode in60p OCX256 IN101P
    Text: OCX256 Crosspoint Switch Advanced Datasheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions


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    OCX256 85Gb/s OCX256L) OCX256P) fairchild aa35 Fairchild F8 A38 fairchild fairchild Af34 fairchild Af35 w38 transistor fairchild AG6 diode in60p IN101P PDF

    IN117

    Abstract: aa36 in60p diode CORE i3 ARCHITECTURE diode ak38 AA34 crosspoint 256 x 256 ocx 256 in60p in75 iN92
    Text: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable 256 configurable I/O ports – 128 dedicated differential input ports


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    OCX256 85Gb/s MKT-OCX256-DS IN117 aa36 in60p diode CORE i3 ARCHITECTURE diode ak38 AA34 crosspoint 256 x 256 ocx 256 in60p in75 iN92 PDF

    Untitled

    Abstract: No abstract text available
    Text: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions


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    OCX256 85Gb/s OCX256L) OCX256P) PDF

    Scan AV6

    Abstract: No abstract text available
    Text: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions


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    OCX256 85Gb/s OCX256L) OCX256P) Scan AV6 PDF

    IN126P

    Abstract: AA-38 AH36 AR24
    Text: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions


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    OCX256 85Gb/s OCX256L) OCX256P) IN126P AA-38 AH36 AR24 PDF

    n37 transistor

    Abstract: AH34 transistor crosspoint 256 x 256 ocx 256 w34 transistor AF39 IN125P U39-W39 AB-39 IN80P IN70N
    Text: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable 256 configurable I/O ports – 128 dedicated differential input ports


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    OCX256 85Gb/s all5202593, MKT-OCX256-DS n37 transistor AH34 transistor crosspoint 256 x 256 ocx 256 w34 transistor AF39 IN125P U39-W39 AB-39 IN80P IN70N PDF

    IN117

    Abstract: in60p OCX256 IN104 TBGA792 crosspoint 256 x 256 IN126P
    Text: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions


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    OCX256 85Gb/s OCX256L) OCX256P) One-5428750, IN117 in60p IN104 TBGA792 crosspoint 256 x 256 IN126P PDF

    P521 G

    Abstract: P452 p477 p520 p508 p364 p372 p421 data sheet P439 IR P116
    Text: MSX532 Matrix Switch Preliminary Data Sheet Features • SRAM-based, in-system programmable • 532 Configurable I/O Ports – Individually programmable as input, output, bi-directional, or Bus Repeater mode – Control Signals per I/O port: 2 input enables, 2 output


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    MSX532 MKT-MSX532-DS P521 G P452 p477 p520 p508 p364 p372 p421 data sheet P439 IR P116 PDF

    transistor P479

    Abstract: P521 FAIRCHILD P124 FAIRCHILD p491 p331 TRANSISTOR p372 p525 AU38 p268 "Fairchild Semiconductor" fairchild aa35
    Text: Revised April 2003 MSX532 532 Port Digital Crosspoint Switch with LVTTL I/O’s General Description Features The MSX family of SRAM-based bit-oriented switching devices offer flow-through NRZ data rates of up to 150Mb/s and registered clock frequencies of up to 75MHz. The I/O


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    MSX532 150Mb/s 75MHz. transistor P479 P521 FAIRCHILD P124 FAIRCHILD p491 p331 TRANSISTOR p372 p525 AU38 p268 "Fairchild Semiconductor" fairchild aa35 PDF

    j29 p190

    Abstract: IR P317 p331 TRANSISTOR IR p133 IR p011 MSX532TB792 p308 m29u1 IR P317 t RCA 532
    Text: MSX Family Data Sheet Features • SRAM-based, in-system programmable • Configurable I/O Ports – Individually programmable as input, output, bi-directional, or Bus Repeater mode – Control Signals per I/O port: 2 input enables, 2 output enables, 2 Global Clock inputs and Next Neighbor


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    P132-P134

    Abstract: p331 TRANSISTOR P452
    Text: MSX Family Data Sheet Features • SRAM-based, in-system programmable • Configurable I/O Ports – Individually programmable as input, output, bi-directional, or Bus Repeater mode – Control Signals per I/O port: 2 input enables, 2 output enables, 2 Global Clock inputs and Next Neighbor


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    aw7 TRANSISTOR

    Abstract: P449 I-CUBE iq P-033 Bus repeater p426 P-238 P122-P120 p331 TRANSISTOR P339
    Text: MSX Family Data Sheet Features • SRAM-based, in-system programmable • Configurable I/O Ports – Individually programmable as input, output, bi-directional, or Bus Repeater mode – Control Signals per I/O port: 2 input enables, 2 output enables, 2 Global Clock inputs and Next Neighbor


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