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    N2 MOS Search Results

    N2 MOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
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    N2 MOS Price and Stock

    Infineon Technologies AG DEMOSENSE2GOLMAKETOBO1

    Multiple Function Sensor Development Tools
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DEMOSENSE2GOLMAKETOBO1 3
    • 1 $142.34
    • 10 $142.34
    • 100 $142.34
    • 1000 $142.34
    • 10000 $142.34
    		Buy Now

    N2 MOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TDA8357 equivalent

    Abstract: TDA8359J equivalent pin voltages OF IC tda8357 TDA8359J tda8357 TDA8357j OF IC tda8357 TV flyback transformer TDA8359 tda9587h
    Text: APPLICATION NOTE Application information for TDA8357J N2 and TDA8359J N2 deflection output circuits AN01056 Version 1.0 January 2002 Philips Semiconductors Philips Semiconductors TDA8357JN2 and TDA8359JN2 Vertical deflection output Application Note AN01056


    Original     		PDF TDA8357J TDA8359J AN01056 TDA8357JN2 TDA8359JN2 TDA8357JN1 TDA8359JN1 TDA8359JN2 TDA8357 equivalent TDA8359J equivalent pin voltages OF IC tda8357 tda8357 OF IC tda8357 TV flyback transformer TDA8359 tda9587h

    Untitled

    Abstract: No abstract text available
    Text: ;6 21  BGU6005/N2 Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass Rev. 1 — 24 March 2014 Preliminary data sheet 1. Product profile 1.1 General description The BGU6005/N2 is a Low Noise Amplifier LNA for GNSS receiver applications in a plastic leadless 6-pin, extremely small SOT886 package. The BGU6005/N2 requires only


    Original     		PDF BGU6005/N2 BGU6005/N2 OT886 BGU6005

    N2 SOT-23

    Abstract: wg 252 2N6660 SOT-89 N2 TO-92 TN0604 equivalent TN2524 to-39 supertex VN0808 VN10K
    Text: Supertex inc. Selector Guide N-Channel Enhancement Mode MOSFETs Device BVDSS V (max Ω) (min A) (max pF) (max V) VGS(TH) Package Options Application Notes 2N6660 60 3.0 1.5 50 2.0 3-Lead TO-39 (N2) - 2N6661 90 4.0 1.5 50 2.0 3-Lead TO-39 (N2) - 2N7000 60


    Original     		PDF 2N6660 2N6661 2N7000 2N7002 OT-23 2N7008 TN0104 TN0106 TN0110 TN0604 N2 SOT-23 wg 252 2N6660 SOT-89 N2 TO-92 TN0604 equivalent TN2524 to-39 supertex VN0808 VN10K

    TN2524

    Abstract: SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110
    Text: Supertex inc. Selector Guide N-Channel Enhancement Mode MOSFETs BVDSS Device V RDS(ON) max ID(ON) min (Ω) CISS max (A) (pF) VGS(TH) max (V) Package Options Application Notes 2N6660 60 3.0 1.5 50 2.0 3-Lead TO-39 (N2) - 2N6661 90 4.0 1.5 50 2.0 3-Lead TO-39 (N2)


    Original     		PDF 2N6660 2N6661 2N7000 2N7002 OT-23 2N7008 TN0104 TN0106 TN0110 VN2406 TN2524 SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110

    WW03A3SBQ4-N2

    Abstract: No abstract text available
    Text: WAH WANG HOLDINGS HONG KONG CO., LTD. Factory : WAH WANG OPTOELECTRONIC (SHENZHEN) CO LTD ; Wah Wang Data Sheet for 3mm Super Bright Blue LED 3A3 Series Angle: 25° Class: Q Part No: WW03A3SBQ4-N2 Address : Tel : Fax : Web Site : WW03A3SBQ4-N2 Unit 08, 8th Floor, Nanyang Plaza,


    Original     		PDF WW03A3SBQ4-N2 WW03A3SBQ4-N2

    raychem JOINT procedure KIT 11kv cable shrinkable

    Abstract: 11kv raychem termination kit raychem heat shrink boots raychem 11KV CABLE JOINT KIT STS221 raychem silicone grease HSFR12-6-4 raychem JOINT KIT Heat-shrinkable 11KV PANDUIT corporation tie wrap raychem heat shrinkable joint procedure
    Text: 412031.N01 SHRINK 3/5 3/14/03 10:52 AM Page 1 Overview. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . N2 Heavy Wall Heat Shrinkable Tubing . . . . . . . . . . . . . . . . . . . . . . . . . . . N3-N6 Heat Shrinkable End Caps . . . . . . . . . . . . . . . . N7


    Original     		PDF N10-N13 N14-N19 UL486, raychem JOINT procedure KIT 11kv cable shrinkable 11kv raychem termination kit raychem heat shrink boots raychem 11KV CABLE JOINT KIT STS221 raychem silicone grease HSFR12-6-4 raychem JOINT KIT Heat-shrinkable 11KV PANDUIT corporation tie wrap raychem heat shrinkable joint procedure

    2n60

    Abstract: 2N60 TO-252 2n60 MOSFEt ET2N60 ISD20A TO252 rthjc CHARACTERISTICS DIODE 2n60 to-251 TO-252 2N60 TO220F
    Text: 2N60 N2 Amps，600Volts N-Channel MOSFET • Description The ET2N60 N-Ceannel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.


    Original     		PDF Amps600Volts ET2N60 O-220 O-220F O-251 O-252 O220F 2n60 2N60 TO-252 2n60 MOSFEt ISD20A TO252 rthjc CHARACTERISTICS DIODE 2n60 to-251 TO-252 2N60 TO220F

    M2 DIODE

    Abstract: TDA8359J equivalent TDA9587H flyback transformer philips TV AN10114-01 East west single transistor TDA8359J crt vertical deflection circuit TDA935X AN10114
    Text: APPLICATION NOTE Application information for TDA8358J N2 deflection output circuit with East - West amplifier AN10114-01 Version 1.0 June 2002 Philips Semiconductors Philips Semiconductors TDA8358JN2 Vertical deflection output + East - West amplifier Application Note


    Original     		PDF TDA8358J AN10114-01 TDA8358JN2 TDA8358JN1 TDA8358JN2 SCB74 M2 DIODE TDA8359J equivalent TDA9587H flyback transformer philips TV AN10114-01 East west single transistor TDA8359J crt vertical deflection circuit TDA935X AN10114

    TDA 8841 IC

    Abstract: TDA 8844 equivalent tda 8842 equivalent Block Diagram tda 8374 A Block Diagram tda 8374 TDA8841 TDA8841 free Block Diagram tda 8843 Block Diagram tda 8842 TDA8843
    Text: INTEGRATED CIRCUITS DEVICE SPECIFICATION TDA884X/5X-N2 series I2C-bus controlled PAL/NTSC/SECAM TV processors Tentative Device Specification Philips Semiconductors December 16, 1997 Previous version: April 24, 1997 Philips Semiconductors Tentative Device Specification


    Original     		PDF TDA884X/5X-N2 SCA53 TDA 8841 IC TDA 8844 equivalent tda 8842 equivalent Block Diagram tda 8374 A Block Diagram tda 8374 TDA8841 TDA8841 free Block Diagram tda 8843 Block Diagram tda 8842 TDA8843

    transistor d711

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS DEVICE SPECIFICATION TDA 9321H-N2 I2C-bus controlled TV input processor Final Device Specification Philips Semiconductors May 28, 1999 Previous version: April 27, 1999 Philips Semiconductors Final Device Specification I2C-bus controlled TV input processor


    Original     		PDF 9321H-N2 9321H SCA53 transistor d711

    tda 9381 ps

    Abstract: TDA 9361 PS TDA 9350 PS tda 9381 ps n2 ic tda 9381 TDA 9351 PS tda 9350 ps/n2 tda 9381 tda 9386 ps philips colour television picture tube pin volt
    Text: INTEGRATED CIRCUITS DEVICE DATASPECIFICATION SHEET TDA935X/6X/8X PS/N2 series TV signal processor-Teletext decoder with embedded µ-Controller Tentative Device Specification File under2.8 Integrated Circuits, <Handbook> Version: 2001 Jan 18 Previous date: 2000 Nov 29


    Original     		PDF TDA935X/6X/8X theTDA935X/6X/8X tda 9381 ps TDA 9361 PS TDA 9350 PS tda 9381 ps n2 ic tda 9381 TDA 9351 PS tda 9350 ps/n2 tda 9381 tda 9386 ps philips colour television picture tube pin volt

    TDA 0200

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS DEVICE DATASPECIFICATION SHEET TDA935X/6X/8X PS/N2 series TV signal processor-Teletext decoder with embedded µ-Controller Tentative Device Specification File under2.85 Integrated Circuits, <Handbook> Version: 2001 Apr 12 Previous date: 2000 Nov 29


    Original     		PDF TDA935X/6X/8X theTDA935X/6X/8X TDA 0200

    DMC364

    Abstract: No abstract text available
    Text: DMC364A6 Tentative Total pages page DMC364A6 Silicon NPN epitaxial planar type Tr1 Silicon NPN epitaxial planar type (Tr2) For digital circuits Marking Symbol : N2 Package Code : SSSMini6-F2-B Internal Connection 6 5 Absolute Maximum Ratings Ta = 25 °C


    Original     		PDF DMC364A6 DMC364

    TRANSISTOR SMD MARKING CODE QR

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11
    Text: DF N2 020 -6 PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor 15 May 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium


    Original     		PDF PMC85XP DFN2020-6 OT1118) TRANSISTOR SMD MARKING CODE QR MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11

    MLX90609-N2

    Abstract: CLCC32 robots designing melexis cross MEMS ICS ir sensor smd applications of mems gyroscope
    Text: Automotive ICs Navigation Gyroscope MLX90609-N2 • • • • • Bus ICs Applications CMOS Imaging • • High resolution and dynamic range Both digital SPI and analog outputs Low acceleration and angular rate cross sensitivity Low zero rate output drift


    Original     		PDF MLX90609-N2 CLCC32) MLX90609-N2 CLCC32 robots designing melexis cross MEMS ICS ir sensor smd applications of mems gyroscope

    ADSP-2100

    Abstract: ADSP-2100A 128-point radix-2 fft
    Text: Two-Dimensional FFTs 7 7 7.1 TWO-DIMENSIONAL FFTS The two-dimensional discrete Fourier transform 2D DFT is the discretetime equivalent of the two-dimensional continuous-time Fourier transform. Operating on x(n1,n2), a sampled version of a continuous-time


    Original     		PDF 64-by64-point ADSP-2100A) ADSP-2100 ADSP-2100A 128-point radix-2 fft

    DRCF123E

    Abstract: No abstract text available
    Text: DRCF123E Tentative Total pages page DRCF123E Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N2 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DRCF123E DRCF123E

    NXP SMD TRANSISTOR MARKING CODE s1

    Abstract: No abstract text available
    Text: 020 -6 PMDPB58UPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 19 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic


    Original     		PDF PMDPB58UPE DFN2020-6 OT1118) NXP SMD TRANSISTOR MARKING CODE s1

    SOT1118

    Abstract: PMCPB5530X NXP SMD TRANSISTOR MARKING CODE s1
    Text: 020 -6 PMCPB5530X DF N2 20 V, complementary Trench MOSFET Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic


    Original     		PDF PMCPB5530X DFN2020-6 OT1118) SOT1118 PMCPB5530X NXP SMD TRANSISTOR MARKING CODE s1

    Untitled

    Abstract: No abstract text available
    Text: MD -6 PMPB11EN DF N2 020 30 V N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMPB11EN DFN2020MD-6 OT1220)

    Untitled

    Abstract: No abstract text available
    Text: MD -6 PMPB20EN DF N2 020 30 V N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMPB20EN DFN2020MD-6 OT1220)

    Untitled

    Abstract: No abstract text available
    Text: 020 -6 PMDPB85UPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 20 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic


    Original     		PDF PMDPB85UPE DFN2020-6 OT1118)

    d80an2

    Abstract: D80AM2
    Text: D80AM2.N2 FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. 0.32 AMPERES 150, 200 VOLTS RDS i ON = 5.0 n


    OCR Scan     		PDF D80AM2 -D80AN 100ms 250/i/ RDS10N| d80an2

    WD2511A

    Abstract: SR24S WD2511 DALI gateway RDD 17-33 48-PIN 68-PIN SR16 W2511A "LINK STATE"
    Text: WD2511A X.25 Packet Network Interface LAPB FEATURES Handles The Entire Link Level Com m unication Protocol • International standard CCIT X.25 LAPB protocol for packet switching • Program m able link level tim er (T1) and retransm ission counter (N2)


    OCR Scan     		PDF WD2511A 1-800-NET W1336C SR24S WD2511 DALI gateway RDD 17-33 48-PIN 68-PIN SR16 W2511A "LINK STATE"