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    N2 DIODE Search Results

    N2 DIODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation
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    N2 DIODE Price and Stock

    Sensata Technologies M50100TB1200

    Discrete Semiconductor Modules DIODE MODULE 480VAC 100ADC 1200VP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI M50100TB1200 Each 82 1
    • 1 $156.04
    • 10 $149.98
    • 100 $132.6
    • 1000 $132.6
    • 10000 $132.6
    		Buy Now

    Sensata Technologies M50100TB600

    Discrete Semiconductor Modules DIODE MODULE 240VAC 100ADC 600VP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI M50100TB600 Each 10 1
    • 1 $122.28
    • 10 $113.25
    • 100 $104.88
    • 1000 $102.82
    • 10000 $102.82
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    Sensata Technologies M50100THC1600

    Discrete Semiconductor Modules 100Amps 600VAC THC Circuit Power Module
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI M50100THC1600 Each 34 1
    • 1 $141.78
    • 10 $141.78
    • 100 $135.03
    • 1000 $135.03
    • 10000 $135.03
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    Sensata Technologies M5060TB600

    Discrete Semiconductor Modules DIODE MODULE 240VAC 60ADC 600VP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI M5060TB600 Each 2 1
    • 1 $98.32
    • 10 $93.64
    • 100 $91.8
    • 1000 $90
    • 10000 $90
    		Buy Now

    Sensata Technologies M50100TB1600

    Discrete Semiconductor Modules POWER MODULE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI M50100TB1600 Each 2 1
    • 1 $181.99
    • 10 $171.49
    • 100 $167.91
    • 1000 $167.91
    • 10000 $167.91
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    Find more N2 DIODE price and stock on Findchips.com

    N2 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TDA8357 equivalent

    Abstract: TDA8359J equivalent pin voltages OF IC tda8357 TDA8359J tda8357 TDA8357j OF IC tda8357 TV flyback transformer TDA8359 tda9587h
    Text: APPLICATION NOTE Application information for TDA8357J N2 and TDA8359J N2 deflection output circuits AN01056 Version 1.0 January 2002 Philips Semiconductors Philips Semiconductors TDA8357JN2 and TDA8359JN2 Vertical deflection output Application Note AN01056


    Original     		PDF TDA8357J TDA8359J AN01056 TDA8357JN2 TDA8359JN2 TDA8357JN1 TDA8359JN1 TDA8359JN2 TDA8357 equivalent TDA8359J equivalent pin voltages OF IC tda8357 tda8357 OF IC tda8357 TV flyback transformer TDA8359 tda9587h

    Untitled

    Abstract: No abstract text available
    Text: ;6 21  BGU6005/N2 Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass Rev. 1 — 24 March 2014 Preliminary data sheet 1. Product profile 1.1 General description The BGU6005/N2 is a Low Noise Amplifier LNA for GNSS receiver applications in a plastic leadless 6-pin, extremely small SOT886 package. The BGU6005/N2 requires only


    Original     		PDF BGU6005/N2 BGU6005/N2 OT886 BGU6005

    BZX384C75

    Abstract: No abstract text available
    Text: VISHAY BZX384C75_SIN_Spice Vishay Semiconductors BZX384C75_SIN Spice Parameters template bzx384_c75 n2 n1 #* # Model Generated by MODPEX * #Copyright c Symmetry Design Systems* # All Rights Reserved * # UNPUBLISHED LICENSED SOFTWARE *


    Original     		PDF BZX384C75 bzx384 60908e14 5e-11 1e-08) D-74025 08-Dec-03

    Modpex

    Abstract: BZX384C2V7 vishay n5
    Text: VISHAY BZX384C2V7_SIN_Spice Vishay Semiconductors BZX384C2V7_SIN Spice Parameters template bzx384_c2v7 n2 n1 #* # Model Generated by MODPEX * #Copyright c Symmetry Design Systems* # All Rights Reserved * # UNPUBLISHED LICENSED SOFTWARE *


    Original     		PDF BZX384C2V7 bzx384 60908e14 4e-10 1e-08) D-74025 08-Dec-03 Modpex vishay n5

    BZX84C5V6

    Abstract: IS-1E-14 n3145 Modpex
    Text: VISHAY BZX84C5V6_SIN _Spice Vishay Semiconductors BZX84C5V6_SIN Spice Parameters template bzx84_c5v6 n2 n1 #* # Model Generated by MODPEX * #Copyright c Symmetry Design Systems* # All Rights Reserved * # UNPUBLISHED LICENSED SOFTWARE *


    Original     		PDF BZX84C5V6 60908e14 9e-11 1e-08) D-74025 09-Dec-03 IS-1E-14 n3145 Modpex

    UDN2983A equivalent

    Abstract: A2982SLW A2984SLW UDN2980A UDN2981A UDN2982A UDN2982LW UDN2983A UDN2984A UDN2984LW
    Text: Data Sheet 29310E 2981 THRU 2984 8-CHANNEL SOURCE DRIVERS UDN2981A thru UDN2984A 18 2 17 3 16 4 15 5 14 6 13 7 12 Th e an UD d N2 — UD 98 Sh N2 3A ow 98 , A n 4LW 298 fo 4S a r r re L ef d W, er isc U en o DN ce nti 29 on nue 84A ly d. , . 1 Recommended for high-side switching applications that benefit from


    Original     		PDF 29310E UDN2981A UDN2984A UDN2983A equivalent A2982SLW A2984SLW UDN2980A UDN2982A UDN2982LW UDN2983A UDN2984A UDN2984LW

    IC udn 2981

    Abstract: UDN2983A equivalent 113A CMOS A2982SLW A2984SLW UDN2980A UDN2981A UDN2982A UDN2982LW UDN2983A
    Text: Data Sheet 29310E 2981 THRU 2984 8-CHANNEL SOURCE DRIVERS UD N2 Th ac 98 eA ce 3A di pt is sc 29 ed L on 84 un AS tin SL til Tue W, Oc TIM d. UD to E Sh N2 be B ow 98 r 2 UY 4 n A, 9, w fo & ith 2 rr U 04 or D ef N . de er 29 rs en 8 ce 4LW on a ly re . UDN2981A thru UDN2984A


    Original     		PDF 29310E UDN2981A UDN2984A IC udn 2981 UDN2983A equivalent 113A CMOS A2982SLW A2984SLW UDN2980A UDN2982A UDN2982LW UDN2983A

    Untitled

    Abstract: No abstract text available
    Text: AEC-Q101 Qualified Schottky barrier diode RB521CS-30FH zApplications Low current rectification zLand size figure Unit : mm zDimensions (Unit : mm) 0.16±0.05 0.55 0.45 0.6±0.05 0.45 VM N2 3) High reliability zStructure 1.0±0.05 0.9±0.05 0.5 zFeatures


    Original     		PDF AEC-Q101 RB521CS-30FH R0039A

    M2 DIODE

    Abstract: TDA8359J equivalent TDA9587H flyback transformer philips TV AN10114-01 East west single transistor TDA8359J crt vertical deflection circuit TDA935X AN10114
    Text: APPLICATION NOTE Application information for TDA8358J N2 deflection output circuit with East - West amplifier AN10114-01 Version 1.0 June 2002 Philips Semiconductors Philips Semiconductors TDA8358JN2 Vertical deflection output + East - West amplifier Application Note


    Original     		PDF TDA8358J AN10114-01 TDA8358JN2 TDA8358JN1 TDA8358JN2 SCB74 M2 DIODE TDA8359J equivalent TDA9587H flyback transformer philips TV AN10114-01 East west single transistor TDA8359J crt vertical deflection circuit TDA935X AN10114

    TDA 8841 IC

    Abstract: TDA 8844 equivalent tda 8842 equivalent Block Diagram tda 8374 A Block Diagram tda 8374 TDA8841 TDA8841 free Block Diagram tda 8843 Block Diagram tda 8842 TDA8843
    Text: INTEGRATED CIRCUITS DEVICE SPECIFICATION TDA884X/5X-N2 series I2C-bus controlled PAL/NTSC/SECAM TV processors Tentative Device Specification Philips Semiconductors December 16, 1997 Previous version: April 24, 1997 Philips Semiconductors Tentative Device Specification


    Original     		PDF TDA884X/5X-N2 SCA53 TDA 8841 IC TDA 8844 equivalent tda 8842 equivalent Block Diagram tda 8374 A Block Diagram tda 8374 TDA8841 TDA8841 free Block Diagram tda 8843 Block Diagram tda 8842 TDA8843

    ASD751V-N2

    Abstract: No abstract text available
    Text: Formosa MS Advanced Schottky Barrier Diodes ASD751V-N2 Surface mount small signal type Features 0.106 2.7 0.090 (2.3) 0.012(0.3) Typ. Extermely low VF Extermely thin package R0.5 (0.02) Typ. 0.053 (1.35) 0.045 (1.15) Low stored charge Majority carrier conduction


    Original     		PDF ASD751V-N2 OD-323 MIL-STD-750, 1000m ASD751V-N2

    Untitled

    Abstract: No abstract text available
    Text: Schottky barrier diode RB521CS-30 Applications Low current rectification Dimensions Unit : mm Land size figure (Unit : mm) 0.55 0.16±0.05 0.5 0.45 0.6±0.05 0.45 0.9±0.05 VM N2 3) High reliability Structure 1.0±0.05 Features 1) Ultra Small power mold type


    Original     		PDF RB521CS-30 R0039A

    transistor marking N1

    Abstract: marking CODE n3 NRD4007 marking n4 n1 MARKing NRD4003 sma flat NSD12 NSD15 NRD4004
    Text: 02/22/2006 www.niccomp.com | tech support: tpmg@niccomp.com COMPONENT MARKING PRODUCTS: SMT DIODES SERIES: NRD & NSD TYPE: SMA SIZE FLAT CHIP RECTIFIER DIODES NIC SERIES: NRD N1 PART NUMBER CODE: N1 = NRD4001, N2 = NRD4002, N3 = NRD4003, N4 = NRD4004 N5 = NRD4005, N6 = NRD4006, N7 = NRD4007


    Original     		PDF NRD4001, NRD4002, NRD4003, NRD4004 NRD4005, NRD4006, NRD4007 NSD12, NSD13, NSD14, transistor marking N1 marking CODE n3 NRD4007 marking n4 n1 MARKing NRD4003 sma flat NSD12 NSD15 NRD4004

    RB521CS-30

    Abstract: No abstract text available
    Text: Schottky barrier diode RB521CS-30 zApplications Low current rectification zDimensions Unit : mm zLand size figure (Unit : mm) 0.16±0.05 0.55 0.45 0.6±0.05 0.45 0.9±0.05 VM N2 3) High reliability zStructure 1.0±0.05 0.5 zFeatures 1) Ultra Small power mold type


    Original     		PDF RB521CS-30 R0039A RB521CS-30

    transistor d711

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS DEVICE SPECIFICATION TDA 9321H-N2 I2C-bus controlled TV input processor Final Device Specification Philips Semiconductors May 28, 1999 Previous version: April 27, 1999 Philips Semiconductors Final Device Specification I2C-bus controlled TV input processor


    Original     		PDF 9321H-N2 9321H SCA53 transistor d711

    tda 9381 ps

    Abstract: TDA 9361 PS TDA 9350 PS tda 9381 ps n2 ic tda 9381 TDA 9351 PS tda 9350 ps/n2 tda 9381 tda 9386 ps philips colour television picture tube pin volt
    Text: INTEGRATED CIRCUITS DEVICE DATASPECIFICATION SHEET TDA935X/6X/8X PS/N2 series TV signal processor-Teletext decoder with embedded µ-Controller Tentative Device Specification File under2.8 Integrated Circuits, <Handbook> Version: 2001 Jan 18 Previous date: 2000 Nov 29


    Original     		PDF TDA935X/6X/8X theTDA935X/6X/8X tda 9381 ps TDA 9361 PS TDA 9350 PS tda 9381 ps n2 ic tda 9381 TDA 9351 PS tda 9350 ps/n2 tda 9381 tda 9386 ps philips colour television picture tube pin volt

    TDA 0200

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS DEVICE DATASPECIFICATION SHEET TDA935X/6X/8X PS/N2 series TV signal processor-Teletext decoder with embedded µ-Controller Tentative Device Specification File under2.85 Integrated Circuits, <Handbook> Version: 2001 Apr 12 Previous date: 2000 Nov 29


    Original     		PDF TDA935X/6X/8X theTDA935X/6X/8X TDA 0200

    YG225C2

    Abstract: YG225D2 YG225N2
    Text: YG225C2,N2,D2 10A (200V / 10A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2


    Original     		PDF YG225C2 13Min SC-67 YG225N2 YG225D2 YG225D2

    YG225N2

    Abstract: yg225d2 YG225C2
    Text: YG225C2,N2,D2 10A (200V / 10A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2


    Original     		PDF YG225C2 13Min SC-67 YG225N2 YG225D2 yg225d2

    YG225N2

    Abstract: YG225C2 YG225D2 200V 10A
    Text: YG225C2,N2,D2 10A (200V / 10A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2


    Original     		PDF YG225C2 13Min SC-67 YG225C2 YG225N2 YG225D2 YG225N2 YG225D2 200V 10A

    2n60

    Abstract: 2N60 TO-252 2n60 MOSFEt ET2N60 ISD20A TO252 rthjc CHARACTERISTICS DIODE 2n60 to-251 TO-252 2N60 TO220F
    Text: 2N60 N2 Amps，600Volts N-Channel MOSFET • Description The ET2N60 N-Ceannel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.


    Original     		PDF Amps600Volts ET2N60 O-220 O-220F O-251 O-252 O220F 2n60 2N60 TO-252 2n60 MOSFEt ISD20A TO252 rthjc CHARACTERISTICS DIODE 2n60 to-251 TO-252 2N60 TO220F

    Untitled

    Abstract: No abstract text available
    Text: YG233C2,N2,D2 8A (200V / 8A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1 2 15±0.3 6.3 2.7±0.2 3 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0


    Original     		PDF YG233C2 13Min SC-67 YG233C2 YG233N2 YG233D2

    Untitled

    Abstract: No abstract text available
    Text: YG233C2,N2,D2 8A (200V / 8A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1 2 15±0.3 6.3 2.7±0.2 3 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0


    Original     		PDF YG233C2 13Min SC-67 YG233N2 YG233D2

    YG233C2

    Abstract: YG233D2 YG233N2
    Text: YG233C2,N2,D2 8A (200V / 8A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1 2 15±0.3 6.3 2.7±0.2 3 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0


    Original     		PDF YG233C2 13Min SC-67 YG233C2 YG233N2 YG233D2 YG233D2 YG233N2