TDA8357 equivalent
Abstract: TDA8359J equivalent pin voltages OF IC tda8357 TDA8359J tda8357 TDA8357j OF IC tda8357 TV flyback transformer TDA8359 tda9587h
Text: APPLICATION NOTE Application information for TDA8357J N2 and TDA8359J N2 deflection output circuits AN01056 Version 1.0 January 2002 Philips Semiconductors Philips Semiconductors TDA8357JN2 and TDA8359JN2 Vertical deflection output Application Note AN01056
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TDA8357J
TDA8359J
AN01056
TDA8357JN2
TDA8359JN2
TDA8357JN1
TDA8359JN1
TDA8359JN2
TDA8357 equivalent
TDA8359J equivalent
pin voltages OF IC tda8357
tda8357
OF IC tda8357
TV flyback transformer
TDA8359
tda9587h
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Untitled
Abstract: No abstract text available
Text: ;6 21 BGU6005/N2 Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass Rev. 1 — 24 March 2014 Preliminary data sheet 1. Product profile 1.1 General description The BGU6005/N2 is a Low Noise Amplifier LNA for GNSS receiver applications in a plastic leadless 6-pin, extremely small SOT886 package. The BGU6005/N2 requires only
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BGU6005/N2
BGU6005/N2
OT886
BGU6005
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BZX384C75
Abstract: No abstract text available
Text: VISHAY BZX384C75_SIN_Spice Vishay Semiconductors BZX384C75_SIN Spice Parameters template bzx384_c75 n2 n1 #* # Model Generated by MODPEX * #Copyright c Symmetry Design Systems* # All Rights Reserved * # UNPUBLISHED LICENSED SOFTWARE *
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BZX384C75
bzx384
60908e14
5e-11
1e-08)
D-74025
08-Dec-03
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Modpex
Abstract: BZX384C2V7 vishay n5
Text: VISHAY BZX384C2V7_SIN_Spice Vishay Semiconductors BZX384C2V7_SIN Spice Parameters template bzx384_c2v7 n2 n1 #* # Model Generated by MODPEX * #Copyright c Symmetry Design Systems* # All Rights Reserved * # UNPUBLISHED LICENSED SOFTWARE *
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BZX384C2V7
bzx384
60908e14
4e-10
1e-08)
D-74025
08-Dec-03
Modpex
vishay n5
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BZX84C5V6
Abstract: IS-1E-14 n3145 Modpex
Text: VISHAY BZX84C5V6_SIN _Spice Vishay Semiconductors BZX84C5V6_SIN Spice Parameters template bzx84_c5v6 n2 n1 #* # Model Generated by MODPEX * #Copyright c Symmetry Design Systems* # All Rights Reserved * # UNPUBLISHED LICENSED SOFTWARE *
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BZX84C5V6
60908e14
9e-11
1e-08)
D-74025
09-Dec-03
IS-1E-14
n3145
Modpex
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UDN2983A equivalent
Abstract: A2982SLW A2984SLW UDN2980A UDN2981A UDN2982A UDN2982LW UDN2983A UDN2984A UDN2984LW
Text: Data Sheet 29310E 2981 THRU 2984 8-CHANNEL SOURCE DRIVERS UDN2981A thru UDN2984A 18 2 17 3 16 4 15 5 14 6 13 7 12 Th e an UD d N2 — UD 98 Sh N2 3A ow 98 , A n 4LW 298 fo 4S a r r re L ef d W, er isc U en o DN ce nti 29 on nue 84A ly d. , . 1 Recommended for high-side switching applications that benefit from
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29310E
UDN2981A
UDN2984A
UDN2983A equivalent
A2982SLW
A2984SLW
UDN2980A
UDN2982A
UDN2982LW
UDN2983A
UDN2984A
UDN2984LW
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IC udn 2981
Abstract: UDN2983A equivalent 113A CMOS A2982SLW A2984SLW UDN2980A UDN2981A UDN2982A UDN2982LW UDN2983A
Text: Data Sheet 29310E 2981 THRU 2984 8-CHANNEL SOURCE DRIVERS UD N2 Th ac 98 eA ce 3A di pt is sc 29 ed L on 84 un AS tin SL til Tue W, Oc TIM d. UD to E Sh N2 be B ow 98 r 2 UY 4 n A, 9, w fo & ith 2 rr U 04 or D ef N . de er 29 rs en 8 ce 4LW on a ly re . UDN2981A thru UDN2984A
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29310E
UDN2981A
UDN2984A
IC udn 2981
UDN2983A equivalent
113A CMOS
A2982SLW
A2984SLW
UDN2980A
UDN2982A
UDN2982LW
UDN2983A
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Untitled
Abstract: No abstract text available
Text: AEC-Q101 Qualified Schottky barrier diode RB521CS-30FH zApplications Low current rectification zLand size figure Unit : mm zDimensions (Unit : mm) 0.16±0.05 0.55 0.45 0.6±0.05 0.45 VM N2 3) High reliability zStructure 1.0±0.05 0.9±0.05 0.5 zFeatures
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AEC-Q101
RB521CS-30FH
R0039A
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M2 DIODE
Abstract: TDA8359J equivalent TDA9587H flyback transformer philips TV AN10114-01 East west single transistor TDA8359J crt vertical deflection circuit TDA935X AN10114
Text: APPLICATION NOTE Application information for TDA8358J N2 deflection output circuit with East - West amplifier AN10114-01 Version 1.0 June 2002 Philips Semiconductors Philips Semiconductors TDA8358JN2 Vertical deflection output + East - West amplifier Application Note
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TDA8358J
AN10114-01
TDA8358JN2
TDA8358JN1
TDA8358JN2
SCB74
M2 DIODE
TDA8359J equivalent
TDA9587H
flyback transformer philips TV
AN10114-01
East west single transistor
TDA8359J
crt vertical deflection circuit
TDA935X
AN10114
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TDA 8841 IC
Abstract: TDA 8844 equivalent tda 8842 equivalent Block Diagram tda 8374 A Block Diagram tda 8374 TDA8841 TDA8841 free Block Diagram tda 8843 Block Diagram tda 8842 TDA8843
Text: INTEGRATED CIRCUITS DEVICE SPECIFICATION TDA884X/5X-N2 series I2C-bus controlled PAL/NTSC/SECAM TV processors Tentative Device Specification Philips Semiconductors December 16, 1997 Previous version: April 24, 1997 Philips Semiconductors Tentative Device Specification
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TDA884X/5X-N2
SCA53
TDA 8841 IC
TDA 8844 equivalent
tda 8842 equivalent
Block Diagram tda 8374 A
Block Diagram tda 8374
TDA8841
TDA8841 free
Block Diagram tda 8843
Block Diagram tda 8842
TDA8843
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ASD751V-N2
Abstract: No abstract text available
Text: Formosa MS Advanced Schottky Barrier Diodes ASD751V-N2 Surface mount small signal type Features 0.106 2.7 0.090 (2.3) 0.012(0.3) Typ. Extermely low VF Extermely thin package R0.5 (0.02) Typ. 0.053 (1.35) 0.045 (1.15) Low stored charge Majority carrier conduction
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ASD751V-N2
OD-323
MIL-STD-750,
1000m
ASD751V-N2
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Untitled
Abstract: No abstract text available
Text: Schottky barrier diode RB521CS-30 Applications Low current rectification Dimensions Unit : mm Land size figure (Unit : mm) 0.55 0.16±0.05 0.5 0.45 0.6±0.05 0.45 0.9±0.05 VM N2 3) High reliability Structure 1.0±0.05 Features 1) Ultra Small power mold type
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RB521CS-30
R0039A
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transistor marking N1
Abstract: marking CODE n3 NRD4007 marking n4 n1 MARKing NRD4003 sma flat NSD12 NSD15 NRD4004
Text: 02/22/2006 www.niccomp.com | tech support: tpmg@niccomp.com COMPONENT MARKING PRODUCTS: SMT DIODES SERIES: NRD & NSD TYPE: SMA SIZE FLAT CHIP RECTIFIER DIODES NIC SERIES: NRD N1 PART NUMBER CODE: N1 = NRD4001, N2 = NRD4002, N3 = NRD4003, N4 = NRD4004 N5 = NRD4005, N6 = NRD4006, N7 = NRD4007
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NRD4001,
NRD4002,
NRD4003,
NRD4004
NRD4005,
NRD4006,
NRD4007
NSD12,
NSD13,
NSD14,
transistor marking N1
marking CODE n3
NRD4007
marking n4
n1 MARKing
NRD4003
sma flat
NSD12
NSD15
NRD4004
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RB521CS-30
Abstract: No abstract text available
Text: Schottky barrier diode RB521CS-30 zApplications Low current rectification zDimensions Unit : mm zLand size figure (Unit : mm) 0.16±0.05 0.55 0.45 0.6±0.05 0.45 0.9±0.05 VM N2 3) High reliability zStructure 1.0±0.05 0.5 zFeatures 1) Ultra Small power mold type
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RB521CS-30
R0039A
RB521CS-30
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transistor d711
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS DEVICE SPECIFICATION TDA 9321H-N2 I2C-bus controlled TV input processor Final Device Specification Philips Semiconductors May 28, 1999 Previous version: April 27, 1999 Philips Semiconductors Final Device Specification I2C-bus controlled TV input processor
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9321H-N2
9321H
SCA53
transistor d711
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tda 9381 ps
Abstract: TDA 9361 PS TDA 9350 PS tda 9381 ps n2 ic tda 9381 TDA 9351 PS tda 9350 ps/n2 tda 9381 tda 9386 ps philips colour television picture tube pin volt
Text: INTEGRATED CIRCUITS DEVICE DATASPECIFICATION SHEET TDA935X/6X/8X PS/N2 series TV signal processor-Teletext decoder with embedded µ-Controller Tentative Device Specification File under2.8 Integrated Circuits, <Handbook> Version: 2001 Jan 18 Previous date: 2000 Nov 29
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TDA935X/6X/8X
theTDA935X/6X/8X
tda 9381 ps
TDA 9361 PS
TDA 9350 PS
tda 9381 ps n2
ic tda 9381
TDA 9351 PS
tda 9350 ps/n2
tda 9381
tda 9386 ps
philips colour television picture tube pin volt
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TDA 0200
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS DEVICE DATASPECIFICATION SHEET TDA935X/6X/8X PS/N2 series TV signal processor-Teletext decoder with embedded µ-Controller Tentative Device Specification File under2.85 Integrated Circuits, <Handbook> Version: 2001 Apr 12 Previous date: 2000 Nov 29
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TDA935X/6X/8X
theTDA935X/6X/8X
TDA 0200
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YG225C2
Abstract: YG225D2 YG225N2
Text: YG225C2,N2,D2 10A (200V / 10A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2
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YG225C2
13Min
SC-67
YG225N2
YG225D2
YG225D2
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YG225N2
Abstract: yg225d2 YG225C2
Text: YG225C2,N2,D2 10A (200V / 10A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2
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YG225C2
13Min
SC-67
YG225N2
YG225D2
yg225d2
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YG225N2
Abstract: YG225C2 YG225D2 200V 10A
Text: YG225C2,N2,D2 10A (200V / 10A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2
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YG225C2
13Min
SC-67
YG225C2
YG225N2
YG225D2
YG225N2
YG225D2
200V 10A
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2n60
Abstract: 2N60 TO-252 2n60 MOSFEt ET2N60 ISD20A TO252 rthjc CHARACTERISTICS DIODE 2n60 to-251 TO-252 2N60 TO220F
Text: 2N60 N2 Amps，600Volts N-Channel MOSFET • Description The ET2N60 N-Ceannel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
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Amps600Volts
ET2N60
O-220
O-220F
O-251
O-252
O220F
2n60
2N60 TO-252
2n60 MOSFEt
ISD20A
TO252 rthjc
CHARACTERISTICS DIODE 2n60
to-251
TO-252
2N60 TO220F
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Untitled
Abstract: No abstract text available
Text: YG233C2,N2,D2 8A (200V / 8A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1 2 15±0.3 6.3 2.7±0.2 3 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0
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YG233C2
13Min
SC-67
YG233C2
YG233N2
YG233D2
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Untitled
Abstract: No abstract text available
Text: YG233C2,N2,D2 8A (200V / 8A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1 2 15±0.3 6.3 2.7±0.2 3 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0
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YG233C2
13Min
SC-67
YG233N2
YG233D2
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YG233C2
Abstract: YG233D2 YG233N2
Text: YG233C2,N2,D2 8A (200V / 8A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1 2 15±0.3 6.3 2.7±0.2 3 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0
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YG233C2
13Min
SC-67
YG233C2
YG233N2
YG233D2
YG233D2
YG233N2
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