Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. SJPZ-N18 1. Scope The present specifications shall apply to an SJPZ-N18. 2. Outline Type Silicon Diode Structure Resin Molded Applications Over Voltage Absorption 3. Flammability UL94V-0 Equivalent 090615 1／4 SANKEN ELECTRIC CO., LTD.
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SJPZ-N18.
SJPZ-N18
UL94V-0
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RFP12N18
Abstract: RFP12N20 "Harris Corporation 1998" AN7254 RFM12N18 RFM12N20 TB334 RFM12
Text: [ /Title RFM12 N18, RFM12 N20, RFP12N 18, RFP12N 20 /Subject (12A, 180V and 200V, 0.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN RFM12N18, RFM12N20, RFP12N18, RFP12N20
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RFM12
RFP12N
O204AA,
O220AB)
RFM12N18,
RFM12N20,
RFP12N18,
RFP12N20
RFP12N18
RFP12N20
"Harris Corporation 1998"
AN7254
RFM12N18
RFM12N20
TB334
RFM12
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Untitled
Abstract: No abstract text available
Text: KSM038AN06A0 / KSMI038AN06A0 TO-220AB Features TO-262AB D = 80A • r DS ON = 3.5mΩ (Typ.), V GS = 10V, I • Qg(tot) = 95nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101
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KSM038AN06A0
KSMI038AN06A0
O-220AB
O-262AB
24e-3
08e-3
28e-2
FDP035AN06A0T
45e-3
65e-2
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n13 sot 65
Abstract: FDT461N 29e8 RS80 marking 461 m067
Text: FDT461N N-Channel Logic Level PowerTrench MOSFET 100V, 0.4A, 2.5Ω Features Applications • rDS ON = 1.45Ω (Typ.), VGS = 4.5V, ID = 0.4A • Servo Motor Load Control • Qg(tot) = 2.36nC (Typ.), VGS = 10V • DC-DC converters • Low Miller Charge • Low QRR Body Diode
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FDT461N
OT-223
110oC/W)
n13 sot 65
FDT461N
29e8
RS80
marking 461
m067
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FDN363N
Abstract: N6 marking diode marking n9
Text: Preliminary FDN363N N-Channel PowerTrench MOSFET 100V, 1A, 240mΩ Features Applications • r DS ON = 200mΩ (Typ.), VGS = 10V, ID = 1A • DC/DC converters • Qg(tot) = 4nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse)
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FDN363N
250oC/W
FDN363N
N6 marking diode
marking n9
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m079
Abstract: HUFA75433S3S HUFA75433S3ST Marking N8 KP26
Text: HUFA75433S3S N-Channel UltraFET MOSFETs 60V, 64A, 16mΩ General Description Applications These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves very low on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse
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HUFA75433S3S
m079
HUFA75433S3S
HUFA75433S3ST
Marking N8
KP26
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Untitled
Abstract: No abstract text available
Text: ITF86116SQT TM Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 File Number 4808.3 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode
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ITF86116SQT
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HUFA76404DK8T
Abstract: NL103
Text: HUFA76404DK8T N-Channel MOSFET 62V, 3.2A, 132mΩ Features Applications • rDS ON = 110mΩ (Typ.), VGS = 5V, ID = 3.2A • Motor / Body Load Control • Qg(tot) = 3.6nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management • Low QRR Body Diode
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HUFA76404DK8T
HUFA76404DK8T
NL103
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AN7254
Abstract: AN7260 ITF86116SQT ITF86116SQT2 TB370
Text: ITF86116SQT Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 5 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode • Simulation Models
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ITF86116SQT
AN7254
AN7260
ITF86116SQT
ITF86116SQT2
TB370
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13E1
Abstract: No abstract text available
Text: HUFA76404DK8T N-Channel MOSFET 62V, 3.2A, 132mΩ Features Applications • rDS ON = 110mΩ (Typ.), VGS = 5V, ID = 3.2A • Motor / Body Load Control • Qg(tot) = 3.6nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management • Low QRR Body Diode
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HUFA76404DK8T
13E1
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AN7254
Abstract: AN7260 ITF86174SQT ITF86174SQT2 TB370
Text: ITF86174SQT Data Sheet 9A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET Packaging TSSOP-8 Features • Ultra Low On-Resistance - rDS ON = 0.016Ω, VGS = −10V - rDS(ON) = 0.024Ω, VGS = −4.5V - rDS(ON) = 0.027Ω, VGS = −4V • Gate to Source Protection Diode
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ITF86174SQT
AN7254
AN7260
ITF86174SQT
ITF86174SQT2
TB370
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AN7254
Abstract: AN7260 ITF86116SQT ITF86116SQT2 TB370 86116
Text: ITF86116SQT Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 File Number 4808.2 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode • Simulation Models
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ITF86116SQT
8611ements
AN7254
AN7260
ITF86116SQT
ITF86116SQT2
TB370
86116
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76404DK8
Abstract: HUFA76404DK8T RG103 KP108
Text: HUFA76404DK8T N-Channel Dual MOSFET 62V, 3.2A, 132mΩ Features Applications rDS ON = 110mΩ (Typ.), VGS = 5V, ID = 3.2A Motor / Body Load Control Qg(tot) = 3.8nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode
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HUFA76404DK8T
HUFA76404DK8T
76404DK8
RG103
KP108
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AN7254
Abstract: AN7260 ITF86116SQT ITF86116SQT2 TB370 MO-153AA
Text: ITF86116SQT Data Sheet 10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET Packaging TSSOP8 File Number 4808.3 Features • Ultra Low On-Resistance - rDS ON = 0.012Ω, VGS = 10V - rDS(ON) = 0.016Ω, VGS = 4.5V • Gate to Source Protection Diode • Simulation Models
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ITF86116SQT
AN7254
AN7260
ITF86116SQT
ITF86116SQT2
TB370
MO-153AA
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AD544L
Abstract: AD7541AKN G872b G872b-8-1 CA3140B AD7541 AD7541A AD7541AJN AD7541AJP P-20A
Text: a CMOS 12-Bit Monolithic Multiplying DAC AD7541A FEATURES Improved Version of AD7541 Full Four-Quadrant Multiplication 12-Bit Linearity Endpoint All Parts Guaranteed Monotonic TTL/CMOS Compatible Low Cost Protection Schottky Diodes Not Required Low Logic Input Leakage
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12-Bit
AD7541A
AD7541
AD7541A
18-lead
20-Lead
P-20A)
AD544L
AD7541AKN
G872b
G872b-8-1
CA3140B
AD7541
AD7541AJN
AD7541AJP
P-20A
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AD544L
Abstract: G872b-8-1 AD7541ATQ AD517L 5962-89481022X AD7541ATQ/883B
Text: a CMOS 12-Bit Monolithic Multiplying DAC AD7541A FEATURES Improved Version of AD7541 Full Four-Quadrant Multiplication 12-Bit Linearity Endpoint All Parts Guaranteed Monotonic TTL/CMOS Compatible Low Cost Protection Schottky Diodes Not Required Low Logic Input Leakage
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AD7541
12-Bit
AD7541A
AD7541A
18-lead
20-terminal
AD7541AAQ
AD544L
G872b-8-1
AD7541ATQ
AD517L
5962-89481022X
AD7541ATQ/883B
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75332p
Abstract: 75332S 75332 HUF75332P3 75332G huf75332 HUF75332G3 HUF75332S3S HUF75332S3ST TB334
Text: HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75332G3,
HUF75332P3,
HUF75332S3S
75332p
75332S
75332
HUF75332P3
75332G
huf75332
HUF75332G3
HUF75332S3S
HUF75332S3ST
TB334
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IRF530
Abstract: IRF530T IRF530 fairchild 929e1 980E3 IRF530 mosfet ON semiconductor N51 IRF530 application
Text: IRF530 Data Sheet January 2002 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Features Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER
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IRF530
O-220AB
IRF530
IRF530T
IRF530 fairchild
929e1
980E3
IRF530 mosfet
ON semiconductor N51
IRF530 application
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75307D
Abstract: 75307 transistor 75307D TA75307 AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TB334
Text: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75307P3,
HUF75307D3,
HUF75307D3S
43cts
75307D
75307
transistor 75307D
TA75307
AN9321
HUF75307D3
HUF75307D3S
HUF75307D3ST
HUF75307P3
TB334
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Untitled
Abstract: No abstract text available
Text: International Government and Space HEXFRED Diodes liaRlRectifier Hermetic Packages 7-45 Amps 1 For case outline drawing see page 0-2. N-18
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65e9
Abstract: TB370 AN7254 AN7260 ITF86116SQT
Text: ITF86116SQT interrii 10A, 30 V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET mi J a n u a ry . Data Sheet File Number 4808.1 Features • Ultra Low On-Resistance ‘ rDS ON = 0.012£i, VGs = 10V Packaging ‘ rDS(ON) = 0.016£i, VGs = 4.5V TSSOP8 • Gate to Source Protection Diode
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ITF86116SQT
ITF86116SQT
65e9
TB370
AN7254
AN7260
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ad7541abq
Abstract: 2Sc 2349 equivalent AD544L op am lm 7541
Text: ANALOG DEVICES CMOS 12-Bit Monolithic Multiplying DAC _ AD7541A FEATURES Improved Version of AD7541 Full Four-Quadrant Multiplication 12-Bit Linearity Endpoint All Parts Guaranteed Monotonic TTL/CMOS Compatible Low Cost Protection Schottky Diodes N ot Required
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OCR Scan
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PDF
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AD7541
12-Bit
AD7541A
AD7541A
18-lead
20-terminal
ad7541abq
2Sc 2349 equivalent
AD544L
op am lm 7541
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LA 47201
Abstract: 75631P AN9321 AN9322 HUF75631P3 TB334
Text: HUF75631P3 interdi Data Sheet O cto b e r 1999 F ile N um ber 4720.1 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TQ-220AB • Ultra Low On-Resistance - rDS ON = 0.040£2, VGS = 10V SOURCE • Simulation Models - Temperature Compensated PSPICE and SABER®
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HUF75631P3
O-220AB
HUF75631P3
O-220AB
75631P
10ements
43D2271
LA 47201
75631P
AN9321
AN9322
TB334
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Untitled
Abstract: No abstract text available
Text: HUF75329D3, HUF75329D3S Semiconductor March 1999 Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75329D3,
HUF75329D3S
57e-2
13e-1
26e-2
HUF75329D
80e-3
00e-2
00e-3
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