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    Solid State Inc 2N1596

    TO5 1.6 AMP SCR
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    LEDIL FN15969_RONDA-W-C

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    N1596 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SD1620 Ordering number : EN1719C SANYO Semiconductors DATA SHEET 2SD1620 NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe Applications Features • • • • Less power dissipation because of low VCE sat , permitting more flashes of light to be emitted.


    Original     		PDF 2SD1620 EN1719C

    Untitled

    Abstract: No abstract text available
    Text: 2SD1620 Ordering number : EN1719D SANYO Semiconductors DATA SHEET 2SD1620 NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe Applications Features Less power dissipation because of low VCE sat , permitting more flashes of light to be emitted Large current capacity and highly resistant to breakdown


    Original     		PDF EN1719D 2SD1620

    2SD1620

    Abstract: No abstract text available
    Text: Ordering number:EN1719B NPN Epitaxial Planar Silicon Transistor 2SD1620 1.5V, 3V Strobe Applications Package Dimensions unit:mm 2038A [2SD1620] 4.5 1.6 2.5 1.5 0.4 0.5 3 1.5 2 4.25max • Less power dissipation because of low VCE sat , permitting more flashes of light to be emitted.


    Original     		PDF EN1719B 2SD1620 2SD1620] 25max 2SD1620

    2SD879

    Abstract: No abstract text available
    Text: Ordering number:EN550F NPN Epitaxial Planar Silicon Transistor 2SD879 1.5V, 3V Strobe Applications Package Dimensions unit:mm 2003B [2SD879] 5.0 4.0 5.0 4.0 0.45 0.5 0.6 2.0 • In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.


    Original     		PDF EN550F 2SD879 2003B 2SD879] 2SD879s 750mW) 14Ltd. 2SD879

    2SD1620

    Abstract: ITR09987 ITR09988 ITR09989
    Text: 2SD1620 Ordering number : EN1719C SANYO Semiconductors DATA SHEET 2SD1620 NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe Applications Features • • • • Less power dissipation because of low VCE sat , permitting more flashes of light to be emitted.


    Original     		PDF 2SD1620 EN1719C 2SD1620 ITR09987 ITR09988 ITR09989

    2SD1620

    Abstract: ITR09987 ITR09988 ITR09989 ITR09990 ITR09991
    Text: Ordering number:ENN1719B NPN Epitaxial Planar Silicon Transistor 2SD1620 1.5V, 3V Strobe Applications Package Dimensions unit:mm 2038A [2SD1620] 4.5 1.6 1.5 2.5 4.25max • Less power dissipation because of low VCE sat , permitting more flashes of light to be emitted.


    Original     		PDF ENN1719B 2SD1620 2SD1620] 25max 2SD1620 ITR09987 ITR09988 ITR09989 ITR09990 ITR09991

    2SC3153

    Abstract: X0131
    Text: Ordering number:ENN1072D NPN Triple Diffused Planar Silicon Transistor 2SC3153 800V/6A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥900V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3153] 15.6


    Original     		PDF ENN1072D 2SC3153 00V/6A VCBO900V) 2SC3153] PW300 Cycle10% 2SC3153 X0131

    Untitled

    Abstract: No abstract text available
    Text: NCP1596, NCP1596A Product Preview 1.5 A, 1.5 MHz Current Mode PWM Buck Down Converter http://onsemi.com The NCP1596/NCP1596A is a current mode PWM buck converter with integrated power switch. It can provide up to 1.5 A output current with high conversion efficiency. High frequency PWM control


    Original     		PDF NCP1596, NCP1596A NCP1596/NCP1596A NCP1596/D

    FNCLM-V4-D9FNCLM-V4-D9-L10

    Abstract: water BALL VALVE KSSC koganei MISUMI 10123F 480E-6 3CIM magma stop screw
    Text: INSERTION PRESS FOR STD MAG-MATE Instruction Sheet STD MAGインサーションプレス取扱説明書 取扱説明書 MAG-MATE 用 インサーションプレス P/N １５９６００１－ １５９６００１－３ －４ 、－４ 株 モリック殿向け限定仕様


    Original     		PDF SMSM-301 SM-401 TL-113TL-113-1 B-203-0 10WSSB 5143-5MZCVZ 5143-5MZC-02 220AMC 220-02B FNCLM-V4-D9FNCLM-V4-D9-L10 water BALL VALVE KSSC koganei MISUMI 10123F 480E-6 3CIM magma stop screw

    2SD879

    Abstract: Transistor 5503
    Text: Ordering number:EN550F NPN Epitaxial Planar Silicon Transistor 2SD879 1.5V, 3V Strobe Applications Package Dimensions unit:mm 2003B [2SD879] 5.0 4.0 5.0 4.0 0.45 0.5 0.6 2.0 • In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.


    Original     		PDF EN550F 2SD879 2003B 2SD879] 2SD879s 750mW) 2SD879 Transistor 5503

    vco 27MHz

    Abstract: 3216BL ILC03096 DIP30S ILC03097 ILC03098 LC74795 LC74795M N1596 RST05
    Text: 注文コード No. N ※ 5558A LC74795, 74795M No. N ※ 5558A 32406 開発ニューズ No.N ※ 5558 とさしかえてください。 LC74795, LC74795M CMOS LSI オンスクリーン ディスプレイコントローラ LSI LC74795, 74795M はマイクロコンピュータの制御により、TV 画面上に文字・パターンを表示する


    Original     		PDF LC74795, 74795M LC74795M 74795M 3216BLC74795M 3196ALC74795 51min 95max vco 27MHz 3216BL ILC03096 DIP30S ILC03097 ILC03098 LC74795 LC74795M N1596 RST05

    Untitled

    Abstract: No abstract text available
    Text: 2SD1620 Ordering number : EN1719C SANYO Semiconductors DATA SHEET 2SD1620 NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe Applications Features • • • • Less power dissipation because of low VCE sat , permitting more flashes of light to be emitted.


    Original     		PDF 2SD1620 EN1719C

    2sd1620

    Abstract: No abstract text available
    Text: Ordering number : EN1719D 2SD1620 Bipolar Transistor 10V, 3A, Low VCE sat , NPN Single PCP http://onsemi.com Features Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted Large current capacity and highly resistant to breakdown


    Original     		PDF EN1719D 2SD1620 2sd1620

    2sc3153

    Abstract: No abstract text available
    Text: Ordering number:EN1072D NPN Triple Diffused Planar Silicon Transistor 2SC3153 800V/6A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥900V . · Fast switching speed. · Wide ASO. unit:mm 2022A [2SC3153] 1 : Base


    Original     		PDF EN1072D 2SC3153 00V/6A VCBO900V) 2SC3153] 2sc3153

    2sc3153

    Abstract: No abstract text available
    Text: O rdering num ber: EN1D72D 2SC3153 NO.1072D NPN Triple Diffused P lan ar Silicon Transistor 800V/6A Switching Regulator Applications F e a tu re s •High breakdown voltage Vcbo = 900V . • F ast switching time. •WideASO. A bsolu te M axim um R a tin g s a t Ta = 25°C


    OCR Scan     		PDF EN1072D l072D 2SC3153 00V/6A 300jj -51Bi 2sc3153

    kijima

    Abstract: 2SD879 germanium transistors NPN DFC05 EE13 Sanyo Germanium
    Text: Ordering number:EN550F _ 2SD879 NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe Applications A p p licatio n s • In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. • The charge time is approximately 1 second faster than th at of germanium transistors.


    OCR Scan     		PDF EN550F 2SD879 2SD879s 750mW) kijima 2SD879 germanium transistors NPN DFC05 EE13 Sanyo Germanium