Allen-Bradley W heater elements
Abstract: Allen-Bradley heater elements Allen-Bradley bulletin 815 type a Allen-Bradley bulletin 705 Allen-Bradley bulletin 712 4-02-4024 Allen-Bradley 500 heater elements Allen-Bradley bulletin 815 Allen-Bradley starter 709 N7812
Text: BULLETIN c m T&w PRODUCT I 815 DATA TYPEN HEATERELEMENTS HEATER ELEMENT SELECTION - The “Full Load Amps.” listed in the tables are to be used for heater element selection. The rating of the relay in amperes at 40” C is 115% of the “Full Load Amps.” listed for the “Heater Type No.”
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n14 167
Abstract: PA-PGA209-01
Text: PA-PGA209-01 Map Rev B, 8/2/94 189,168 106,85 22,1 147,126 64,43 1,22 209,188 125,105 42,21 167,146 84,63 Bottom View-Base PGA A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 B1 Base 3 24 22 43 45 66 91 85 87 108 112 126 128 149 191 169 170 4 PGA
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PA-PGA209-01
n14 167
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TB370
Abstract: AN9321 AN9322 HUF75531SK8 HUF75531SK8T MS-012AA
Text: HUF75531SK8 Data Sheet December 2001 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE and SABER
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HUF75531SK8
MS-012AA
75531SK8
HUF75531SK8
TB370
AN9321
AN9322
HUF75531SK8T
MS-012AA
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HUF75631SK8
Abstract: HUF75631SK8T MS-012AA TB334 AN7254 AN7260 AN9321 AN9322
Text: HUF75631SK8 Data Sheet October 1999 File Number 4785 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC MS-012AA • Ultra Low On-Resistance - rDS ON = 0.039Ω, VGS = 10V BRANDING DASH 5 1 2 3 • Simulation Models - Temperature Compensated PSPICE and SABER
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HUF75631SK8
MS-012AA
75631SK8
HUF75631SK8
HUF75631SK8T
MS-012AA
TB334
AN7254
AN7260
AN9321
AN9322
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Untitled
Abstract: No abstract text available
Text: HUFA75531SK8 TM Data Sheet November 2000 File Number 4953 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE and SABER
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HUFA75531SK8
MS-012AA
HUFA75531SK8
MS-012AA
75531SK8
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152oC
Abstract: 900E1 212e7
Text: HUFA75831SK8 TM Data Sheet November 2000 File Number 4967 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.095Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE® and SABER
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HUFA75831SK8
MS-012AA
HUFA75831SK8
MS-012AA
75831SK8
152oC
900E1
212e7
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T25 4 h5
Abstract: AF4 equivalent AF14 160 e7 af17 AR29 J9-J14 AC22 AE23 EPF10K130E
Text: EPF10K130E Device Pin-Outs ver. 1.1 Pin Name 1 MSEL0 (3) MSEL1 (3) nSTATUS (3) nCONFIG (3) DCLK (3) CONF_DONE (3) INIT_DONE (4) nCE (3) nCEO (3) nWS (5) nRS (5) nCS (5) CS (5) RDYnBUSY (5) CLKUSR (5) DATA7 (5) DATA6 (5) DATA5 (5) DATA4 (5) DATA3 (5) DATA2 (5)
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EPF10K130E
240-Pin
T25 4 h5
AF4 equivalent
AF14
160 e7
af17
AR29
J9-J14
AC22
AE23
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FDD8870_NL
Abstract: OC-86 FDD8870 FDU8870
Text: FDD8870 / FDU8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDD8870
FDU8870
O-252
O-252)
O-251AA)
FDD8870_NL
OC-86
FDU8870
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AF14
Abstract: AC22 AE23 EPF10K130E AJ32 AE10-AE11 AE20-AE21
Text: EPF10K130E Device Pin-Outs ver. 1.1 Pin Name 1 MSEL0 (3) MSEL1 (3) nSTATUS (3) nCONFIG (3) DCLK (3) CONF_DONE (3) INIT_DONE (4) nCE (3) nCEO (3) nWS (5) nRS (5) nCS (5) CS (5) RDYnBUSY (5) CLKUSR (5) DATA7 (5) DATA6 (5) DATA5 (5) DATA4 (5) DATA3 (5) DATA2 (5)
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EPF10K130E
240-Pin
AF14
AC22
AE23
AJ32
AE10-AE11
AE20-AE21
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FDD8870
Abstract: FDU8870
Text: tm FDD8870 / FDU8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDD8870
FDU8870
O-252
O-252)
O-251AA)
FDU8870
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Untitled
Abstract: No abstract text available
Text: HUFA75631SK8 TM Data Sheet November 2000 File Number 4959 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH 5 • Simulation Models - Temperature Compensated PSPICE® and SABER Electrical Models - Spice and SABER Thermal Impedance Models
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HUFA75631SK8
MS-012AA
HUFA75631SK8
MS-012AA
75631SK8
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Untitled
Abstract: No abstract text available
Text: FDD8870 / FDU8870 tm N-Channel PowerTrench MOSFET 30V, 160A, 3.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDD8870
FDU8870
O-252
O-252)
O-251AA)
FDU8870
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Untitled
Abstract: No abstract text available
Text: ISL9N305ASK8T N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFET General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching Optimized for switching applications, this device improves
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ISL9N305ASK8T
4260pF
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HG1133G
Abstract: HG1131G HG1077G hg1133 DL7670 HG1075G HG-1133 NAG161 DL7670G IC N141
Text: -7 3 i % 5ê £ it ñ íi a^y-r.'-Y fck GL9E100 =a> GL8K10 HG1075G HG1077G HG1Í05G H^xi Iu7<-i DL-7671G t !> -f nm n -r —v 1 >- > X DL-7673G HG1131G HG1133G N AG131 NKG131 N14 * ? > - it úíj ft tì T„ = 25’CÌ V n y GL8E100 GL9K10 DL-7670G £ AA
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25-Ci
GL9E100
GL8E100
GL8K10
HG1075G
HG1077G
HG1I05G
DL-7670G
-35-Vâ
P2X14-2BÂ
HG1133G
HG1131G
HG1077G
hg1133
DL7670
HG-1133
NAG161
DL7670G
IC N141
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DL7750R
Abstract: HD-11330 hd11310 DL-7750R DL-76510 DL7751R HD11050 dl76500 7750R DL-7751R
Text: -65- « « 'S g it tr > tfc ?, fe 3 * > ‘7 / “ K * 1-f y 4-1 K K •7t ¥ m ft f t ~k. 1 Í 7 ’^ 2 5 - C w fö \7'„ = 25:C i Dp -f- V WHtit iá t . E n (nm' AA (nm) G a A IA s 660 20 10 1.8 G aAsP 635 35 20 1.8 G a A IA s 660 20 G aAsF 635 35 Xp
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GL9T100
GL8T100
GL9D18
GL8D18
GL9L18
GL8L18
GL9D10Ã
GL9L040
GL8L040
P2X14-2BÂ
DL7750R
HD-11330
hd11310
DL-7750R
DL-76510
DL7751R
HD11050
dl76500
7750R
DL-7751R
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SL-2283
Abstract: LN513YK NAA141 NAA143 NAA145 NAA147 NAA161 NKA141 NKA143 NKA145
Text: -69- ¿2 £ 3S % fe it n - t to m ! t „= 25“C ü -k. Æ tö i.Ta = 25’Ci Dp }± 3 Í> -T /-K •± •S it iligUlÜHÖ; ¡i -f ' S C I w m - i l '/ - K X9 'v - Af nm AA If (nm) im A) I\ If (m cd) im A ) Vf 'V i «III;! If Im A) ¡//A) Vr \V ) I f im A)
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NAA141
NKA141
NAA143
NKA143
NAA145
NKA145
NAA147
NKA147
NAA161
NKA161
SL-2283
LN513YK
NKA141
NKA143
NKA145
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TLR306
Abstract: TLR308 HDSP-3733 HDSP-7303 HDSP-3731 HDSP-H101 hdsp 3731 HDSP-3401 HDSP-3403 HDSP-5503
Text: -67— £ A •i t ^ % tt it il- •f >-f. h n 3Z> -r / - K AA Ai ’ nmi 'nm¡ ly ImAi 1Í ( T„ = 25°C & ^ a iS I lŒ a n it r a m m itm Vf If <medí im A 1 cV I If Ih CmAi ^ A tè ; t „= 25‘C 1 « Jf^ s Dp m i Vu (V i '»mA) 7) m ill iV ; re i
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TLR306
TLR308
TLS411S
TLS410S
TLS413S
TLS412S
TLRA46Ã
TLRA460S
P2X14-2BÂ
MD0657M-R)
TLR308
HDSP-3733
HDSP-7303
HDSP-3731
HDSP-H101
hdsp 3731
HDSP-3401
HDSP-3403
HDSP-5503
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01e3
Abstract: SKB 30 / 02 SKB 7 02 AN9321 AN9322 HUF75631SK8 HUF75631SK8T MS-012AA TB334
Text: interrii H U F 7 5 6 3 1 S K 8 Data S h eet O c to b e r 1999 F ile N u m b e r 4 78 5 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC MS-012AA • Ultra Low On-Resistance BRANDING DASH - rDS ON = 0 -0 3 9 Q , VGS = 10 V • Simulation Models
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HUF75631SK8
MS-012AA
HUF75631SK8
75631SK8
01e3
SKB 30 / 02
SKB 7 02
AN9321
AN9322
HUF75631SK8T
TB334
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TLR313
Abstract: TLR352 TLR-313 TLR312 s336t TLR353 TLRA347S NAR103 NAR105 NAR107
Text: -66- •i t ^ È•J f t ü it fe 3 Í/ - 7 / - K £ X f-IKI? ses H ö m m itm f t j\ 'æ Ta= 25’0 W liiÜ TSŒ S ta f f i« $ s + t £ I f Ap AA I f Iv (nm (nm) (mA) (mcd) (mA) # v —y W (V ) I f la (mA) (/¿A) I f Vu (V) (mA) {T „ = 25°C) m ím %
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NAR103
NKR103
NAR105
NKR105
NAR107
NKR107
NAR131ME
NKR131ME
NAR133ME
NKKR133ME
TLR313
TLR352
TLR-313
TLR312
s336t
TLR353
TLRA347S
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DFRC
Abstract: 86130 2A1050 AN7254 AN7260 ITF86130SK8T MS-012AA TB370 bv164 RS391
Text: in t e ITF86130SK8T r r ii J a n u a ry . Data Sheet 14A, 30V, 0.0078 Ohm, N-Channel, Logic Level, Power MOSFET File Num ber 4798.2 Features • Ultra Low On-Resistance ‘ Packaging r D S O N = 0 .0 0 7 8 a VGS= 10V ‘ rDS(ON) = 0 .0 1 0 a VGs = 4.5V
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MS-012AA)
ITF86130SK8T
0078a
MS-012AA
330mm
EIA-481
DFRC
86130
2A1050
AN7254
AN7260
ITF86130SK8T
MS-012AA
TB370
bv164
RS391
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lambda IC 101
Abstract: AN7254 AN7260 ITF86172SK8T MS-012AA TB370 vj04
Text: ITF86172SK8T interrii January. m i Data Sheet 10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET File Number 4809.1 Features • Ultra Low On-Resistance Packaging ‘ rDS ON = 0 .0 1 6£i, v gs = - 1 0 V S 0 8 (JEDEC MS-012AA) ‘ rDS(ON) = 0.023i2, VGS = - 4 .5 V
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MS-012AA)
ITF86172SK8T
ITF86172SK8T
MS-012AA
330mm
EIA-481
lambda IC 101
AN7254
AN7260
MS-012AA
TB370
vj04
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Untitled
Abstract: No abstract text available
Text: HUF76121SK8 S em iconductor Data Sheet April 1999 • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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HUF76121SK8
TA76121
MS-012AA
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lambda IC 101
Abstract: ITF86182SK8T MS-012AA TB370
Text: in t e ITF86182SK8T r r ii Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET J a n u a ry . mi File Num ber 4797.2 Features • Ultra Low On-Resistance ‘ rDS ON = 0 .0115i2,v Gs = - 1 0 V Packaging S 0 8 (JEDEC MS-012AA) BRANDING DASH
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MS-012AA)
ITF86182SK8T
MS-012AA
330mm
EIA-481
lambda IC 101
ITF86182SK8T
MS-012AA
TB370
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tlr306
Abstract: HDSP-3733 TLR308 IC MAN6760 HDSP-3731 HP 5082-7651 HDSP-F003 HP 5082-7653 hp 5082-7750 hp 5082-7751
Text: -6 2 - IE f£ ffy £ it tfc £ its ? & £ fe /-K á' •± ¥ m # i i r „ = 25°C f t Jz Æ fë íT<,-= 25°C) ks > ipfifu n n A.P (nm) -£ v —K AX I f (nm) Im A) Iv I f Vf I f (m A) (V) 30 10 —5 5 —100 - 5 5 —100 33 5 30 10 —55—100 -5 5 -1 0 0
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MAN10A
MAN71A
MAN72A
MAN74A
P2X14-2BÂ
MD0657M-R)
MD2057C-R)
MD2057C-RG)
SL-Q225
tlr306
HDSP-3733
TLR308
IC MAN6760
HDSP-3731
HP 5082-7651
HDSP-F003
HP 5082-7653
hp 5082-7750
hp 5082-7751
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