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    ITF86182SK8T

    Abstract: MS-012AA TB370
    Text: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V


    Original     		PDF ITF86182SK8T MS-012AA) ITF86182SK8T MS-012AA TB370

    AN9321

    Abstract: HUFA75831SK8 HUFA75831SK8T MS-012AA TB370
    Text: HUFA75831SK8 Data Sheet November 2000 File Number 4967 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.095Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE® and SABER


    Original     		PDF HUFA75831SK8 MS-012AA HUFA75831Slopment. AN9321 HUFA75831SK8 HUFA75831SK8T MS-012AA TB370

    rs808

    Abstract: HUF76112SK8T AN7254 AN7260 AN9321 AN9322 HUF76112SK8 MS-012AA TB334
    Text: HUF76112SK8 Data Sheet December 2001 7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET The HUF76112SK8 is an Application-Specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low


    Original     		PDF HUF76112SK8 HUF76112SK8 725pF rs808 HUF76112SK8T AN7254 AN7260 AN9321 AN9322 MS-012AA TB334

    g7n60b3d

    Abstract: igbt g7n60b3d G7N60B3 HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660 2MH22 150OC
    Text: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		PDF HGTP7N60B3D, HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS 150oC TA49190. RHRD660 TA49057) g7n60b3d igbt g7n60b3d G7N60B3 HGT1S7N60B3DS9A RHRD660 2MH22

    AN9321

    Abstract: AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS
    Text: ISL9N312ASK8T Data Sheet January 2002 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. PWM Optimized Features


    Original     		PDF ISL9N312ASK8T ISL9N312ASK8 MS-012AA AN9321 AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS

    Untitled

    Abstract: No abstract text available
    Text: HUF75831SK8 Data Sheet August 2000 File Number 4796.2 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.095Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE® and SABER


    Original     		PDF HUF75831SK8 MS-012AA HUF75831SK8 MS-012AA 75831SK8 HUF75831SK8T.

    Untitled

    Abstract: No abstract text available
    Text: HUF76132SK8 Data Sheet September 1999 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 32S bt .5A 0V, 115 m, an, gic vel raF wer OST) utho • Logic Level Gate Drive • 11.5A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER∏


    Original     		PDF HUF76132SK8

    UT28F256

    Abstract: UT28F256-FP UT28F256LV RH00VK 39BASE-0101 PPI-1004 UTRH00SC 39BASE Aeroflex UTMC UT28F64/LV Datasheet
    Text: Standard Products UT28F64/LV and UT28F256/LV PROMs Programming User Guide Legacy Products July 2001 PROM PROGRAMMING FLOW FOR UT28F64, UT28F256, UT28F64LV and UT28F256LV PROM for Legacy Products The UT28F64 and UT28F256 are 5-volt parts. The UT28F64LV and UT28F256LV are 5-volt parts that have been characterized for


    Original     		PDF UT28F64/LV UT28F256/LV UT28F64, UT28F256, UT28F64LV UT28F256LV UT28F64 UT28F256 UT28F256-FP RH00VK 39BASE-0101 PPI-1004 UTRH00SC 39BASE Aeroflex UTMC UT28F64/LV Datasheet

    Untitled

    Abstract: No abstract text available
    Text: RURD4120S9A_F085 March 2009 Data Sheet 4A, 1200V Ultrafast Diodes Features The RURD4120S9A_F085 are ultrafast diodes with soft recovery characteristics trr < 70ns . They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF RURD4120S9A

    RHRD660

    Abstract: rhr660 rhr650 RHRD650 RHRD640S RHRD660S RHRD660S9A RHR640 RHRD640 RHRD650S
    Text: S E M I C O N D U C T O R RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S, RHRD660S 6A, 400V - 600V Hyperfast Diodes April 1995 Features • • • • • Package Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . . . . . . . . <30ns Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC


    Original     		PDF RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S, RHRD660S 175oC O-251 O-252 RHRD660 rhr660 rhr650 RHRD650 RHRD640S RHRD660S RHRD660S9A RHR640 RHRD640 RHRD650S

    rs808

    Abstract: 725P AN7254 AN9321 AN9322 HUF76112SK8 HUF76112SK8T MS-012AA TB334 pspice model gate driver
    Text: HUF76112SK8 Data Sheet April 2000 File Number 4834.1 7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET [ /Title HUF7 6112S K8 /Subject (7.5A, 30V, 0.026 Ohm, NChannel, Logic Level Power MOSFET) /Autho r () /Keywords (7.5A, 30V, 0.026 Ohm, NChannel,


    Original     		PDF HUF76112SK8 6112S HUF76112SK8 rs808 725P AN7254 AN9321 AN9322 HUF76112SK8T MS-012AA TB334 pspice model gate driver

    ACE-Q101

    Abstract: No abstract text available
    Text: RURD4120S9A_F085 Data Sheet March 2009 4A, 1200V Ultrafast Diodes Features The RURD4120S9A_F085 are ultrafast diodes with soft recovery characteristics trr < 70ns . They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF RURD4120S9A TA49036. ACE-Q101

    UR4120

    Abstract: TA49036 RURD4120 RURD4120S RURD4120S9A
    Text: RURD4120, RURD4120S Data Sheet Title UR 120, RD 20S bt A, 00V rafa odes utho eyrds A, 00V rafa wer pes, wer File Number 3641.3 4A, 1200V Ultrafast Diodes Features The RURD4120 and RURD4120S are ultrafast diodes with soft recovery characteristics trr < 70ns). They have low


    Original     		PDF RURD4120, RURD4120S RURD4120 RURD4120S UR4120 TA49036 RURD4120S9A

    Untitled

    Abstract: No abstract text available
    Text: LM26420 www.ti.com SNVS579F – FEBRUARY 2009 – REVISED MARCH 2013 LM26420/LM26420Q Dual 2.0A, High Frequency Synchronous Step-Down DC-DC Regulator Check for Samples: LM26420 FEATURES DESCRIPTION • • • • The LM26420 regulator is a monolithic, high


    Original     		PDF LM26420 SNVS579F LM26420/LM26420Q LM26420X) 55MHz LM26420Y) LM26420Q AEC-Q100

    AN7254

    Abstract: AN9321 AN9322 HUF75531SK8 HUF75531SK8T MS-012AA TB370
    Text: HUF75531SK8 TM Data Sheet April 2000 File Number 4848 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		PDF HUF75531SK8 MS-012AA 75531SK8 AN7254 AN9321 AN9322 HUF75531SK8 HUF75531SK8T MS-012AA TB370

    HX8340B

    Abstract: HX8340-B mx 362-0
    Text: DATA SHEET DOC No. HX8340-B(N -DS ) HX8340-B(N) 176RGB x 220 dot, 262k color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 October, 2007 HX8340-B(N) 176RGB x 220 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver


    Original     		PDF HX8340-B 176RGB 224October, 225October, HX8340B mx 362-0

    Untitled

    Abstract: No abstract text available
    Text: HUFA75531SK8 TM Data Sheet November 2000 File Number 4953 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		PDF HUFA75531SK8 MS-012AA HUFA75531SK8 MS-012AA 75531SK8

    152oC

    Abstract: 900E1 212e7
    Text: HUFA75831SK8 TM Data Sheet November 2000 File Number 4967 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.095Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE® and SABER


    Original     		PDF HUFA75831SK8 MS-012AA HUFA75831SK8 MS-012AA 75831SK8 152oC 900E1 212e7

    ITF86172SK8T

    Abstract: MS-012AA TB370
    Text: ITF86172SK8T Data Sheet 10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET January 2000 File Number 4809.1 Features • Ultra Low On-Resistance [ /Title - rDS ON = 0.016Ω, VGS = −10V Packaging (HUF7 - rDS(ON) = 0.023Ω, VGS = −4.5V SO8 (JEDEC MS-012AA)


    Original     		PDF ITF86172SK8T MS-012AA) 6400S ITF86172SK8T MS-012AA TB370

    g7n60

    Abstract: G7N60B3
    Text: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		PDF HGTP7N60B3D, HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS 150oC TA49190. RHRD660 TA49057) g7n60 G7N60B3

    Untitled

    Abstract: No abstract text available
    Text: Product Folder Sample & Buy Technical Documents Support & Community Tools & Software LM26420, LM26420-Q0, LM26420-Q1 SNVS579G – FEBRUARY 2009 – REVISED JULY 2014 LM26420/LM26420-Q0/Q1 Dual 2-A, High Frequency Synchronous Buck Regulator 1 Features 3 Description


    Original     		PDF LM26420, LM26420-Q0, LM26420-Q1 SNVS579G LM26420/LM26420-Q0/Q1 LM26420 16-pin 20-pin

    AN7254

    Abstract: AN7260 ITF86130SK8T MS-012AA TB370
    Text: ITF86130SK8T Data Sheet 14A, 30V, 0.0078 Ohm, N-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH Features • Ultra Low On-Resistance - rDS(ON) = 0.0078Ω, VGS = 10V - rDS(ON) = 0.010Ω, VGS = 4.5V - rDS(ON) = 0.012Ω, VGS = 4.0V


    Original     		PDF ITF86130SK8T MS-012AA) AN7254 AN7260 ITF86130SK8T MS-012AA TB370

    mosfet 4953

    Abstract: 4953 mosfet m 4953 mw 4953 AN9321 HUFA75531SK8 HUFA75531SK8T MS-012AA TB370 151E9
    Text: HUFA75531SK8 Data Sheet November 2000 File Number 4953 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		PDF HUFA75531SK8 MS-012AA 75531SK8 mosfet 4953 4953 mosfet m 4953 mw 4953 AN9321 HUFA75531SK8 HUFA75531SK8T MS-012AA TB370 151E9

    AN7254

    Abstract: AN7260 ITF86130SK8T MS-012AA TB370
    Text: ITF86130SK8T Data Sheet 14A, 30V, 0.0078 Ohm, N-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4798.5 Features • Ultra Low On-Resistance - rDS(ON) = 0.0078Ω, VGS = 10V - rDS(ON) = 0.010Ω, VGS = 4.5V - rDS(ON) = 0.012Ω, VGS = 4.0V


    Original     		PDF ITF86130SK8T MS-012AA) AN7254 AN7260 ITF86130SK8T MS-012AA TB370