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    N-FET TO92 Search Results

    N-FET TO92 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    AD8224ACPZ-WP Analog Devices Dual Channel FET Instrumentati Visit Analog Devices Buy
    AD820ARMZ-R7 Analog Devices FET INPT, SINGLE SPLY AMP Visit Analog Devices Buy
    ADA4817-1ARDZ-R7 Analog Devices High Speed FET Input Amp Visit Analog Devices Buy
    AD8220WARMZ-RL Analog Devices FET Input Instrumentation Ampl Visit Analog Devices Buy
    AD8220BRMZ-RL Analog Devices FET Input Instrumentation Ampl Visit Analog Devices Buy
    AD8224ACPZ-RL Analog Devices Dual Channel FET Instrumentati Visit Analog Devices Buy

    N-FET TO92 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 3VD223600NEYL 3VD223600NEYL N-CH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE DESCRIPTION Ø 3VD223600NEYL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø ESD improved capability Ø


    Original     		PDF 3VD223600NEYL 3VD223600NEYL

    ZVN0117TA

    Abstract: t50c
    Text: Not Recommended for New Design Please Use ZVNL120A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN0117TA ISSUE 1 – APRIL 94 FEATURES * 170 Volt BVDS APPLICATIONS * Telephone handsets D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL


    Original     		PDF ZVNL120A ZVN0117TA 100mA ZVN0117TA t50c

    Untitled

    Abstract: No abstract text available
    Text: IRFNL210B N-Channel B-FET 200 V, 1.0 A, 1.5 Ω Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,


    Original     		PDF IRFNL210B

    1N45B

    Abstract: No abstract text available
    Text: SSN1N45B N-Channel B-FET 450 V, 0.5 A, 4.25 Ω Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,


    Original     		PDF SSN1N45B 1N45B

    40822

    Abstract: No abstract text available
    Text: LND150 N-Channel Depletion-Mode DMOS FET General Description Features The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown Low power drive requirement


    Original     		PDF LND150 LND150 DSFP-LND150 B021110 40822

    BC237

    Abstract: 2N5551 SOT23 2n2222 sot-23 418 motorola j112 fet free transistor BC547 temperature 2N3819 junction fet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  BSS138LT1 Motorola Preferred Device N-Channel Enhancement Mode Logic Level SOT-23 MOSFET N–CHANNEL LOGIC LEVEL TMOS FET TRANSISTOR Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers,


    Original     		PDF BSS138LT1 OT-23 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 2N5551 SOT23 2n2222 sot-23 418 motorola j112 fet free transistor BC547 temperature 2N3819 junction fet

    K596 b 01

    Abstract: K596
    Text: STK596M Semiconductor N-Channel Junction FET Description • Capacitor Microphone application Features • Especially suited for use in audio, telephone capacitor microphones • Excellent voltage characteristic • Excellent transient characteristic Ordering Information


    Original     		PDF STK596M STK596M O-92M KST-I017-002 K596M K596 b 01 K596

    ZVN4306A

    Abstract: DSA003784
    Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4306A ISSUE 3 – JULY 94 FEATURES * 60 Volt VDS * RDS on = 0.33Ω * Spice model available D G APPLICATIONS * DC-DC convertors * Solenoids / relay drivers for automotive S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF ZVN4306A ZVN4306A DSA003784

    ZVNL120A

    Abstract: ZVNL120C
    Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVNL120C ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =10Ω * Low threshold APPLICATIONS * Telephone handsets G D S E-Line TO92 Compatible REFER TO ZVNL120A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER


    Original     		PDF ZVNL120C ZVNL120A 250mA ZVNL120C

    K596

    Abstract: K596 b 01 STK596M CAPACITOR MICROPHONE
    Text: STK596M Semiconductor N-Channel Junction FET Description • Capacitor Microphone application Features • Especially suited for use in audio, telephone capacitor microphones • Excellent voltage characteristic • Excellent transient characteristic Ordering Information


    Original     		PDF STK596M O-92M KST-I017-001 K596 K596 b 01 STK596M CAPACITOR MICROPHONE

    DS200

    Abstract: ZVN0120A ZVN0124A DSA003781
    Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN0120A ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =16Ω APPLICATIONS * Telephone handsets D G S E-Line TO92 Compatible REFER TO ZVN0124A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE


    Original     		PDF ZVN0120A ZVN0124A 250mA DS200 ZVN0120A DSA003781

    Untitled

    Abstract: No abstract text available
    Text: DISCONTINUED PLEASE USE ZVN4424A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4424A/C ZVN4424A/C ISSUE 3 – August 1994 FEATURES * Compact E-LINE TO92 style package * 240 Volt BVDS * RDS(on)=4.3Ω Typical at VGS=2.5V * Low threshold * Fast switching


    Original     		PDF ZVN4424A ZVN4424A/C ZVN4424

    2n5555 Vgs(off)

    Abstract: 2N5555 CS 150 10v
    Text: 2N5555 ♦I N-CHANNEL FET JEDEC TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5555 type is an Silicon N Channel Junction FET designed for switching, RF amplifier and mixer applications where low capacitance is desired. MAXIMUM RA T I N G S Tfl=25°C unless otherwise noted


    OCR Scan     		PDF 2N5555 2n5555 Vgs(off) CS 150 10v

    MIP504

    Abstract: TO-92NL TO92NL 3sk287 3SK282 "Intelligent Power Device"
    Text: FET, IGBT, IPD • IPDs Intelligent Power Device (continued) Application Output Breakdown Input Voltage Voltage Type No. V Non-insulation A M IP 4 0 3 type power supply Packa ge Output MOS FET Features 25mA (at 5V) • O v e r cu rre n t protection built-in


    OCR Scan     		PDF MIP803 15/70mA 140kHz 140kH2 MIP80ute 3SK241 3SK272 3SK273 3SK287 3SK282 MIP504 TO-92NL TO92NL 3SK282 "Intelligent Power Device"

    2SK291

    Abstract: No abstract text available
    Text: HITACHI 2SK291-SILICON N-CHANNEL JUNCTION FET LOW FREQUENCY LOW NOISE AMPLIFIER n _ Î j_ !. IXuii 2 StHJTli 3 C*tc ia tr/n JEDEC TO-92) MAXIMUM CHANNEL POWER DISSIPATION CURVE • ABSOLUTE MAXIMUM RATINGS {T&=25#C) Tieni Symbol 2SK29I


    OCR Scan     		PDF 2SK291 2SK29I 2SK291

    Untitled

    Abstract: No abstract text available
    Text: bbSBTSl Q0175S3 4 N AMER PHILIPS/DISCRETE 55E D BSJ111 BSJ112 BSJ113 JV N-CHANNEL SILICO N FIELD -EFFECT T R A N SIST O R S Symmetrical silicon n-channel junction FET s in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc.


    OCR Scan     		PDF Q0175S3 BSJ111 BSJ112 BSJ113 rBSJ113

    2N3819 junction fet

    Abstract: transistor 2N3819 2N3O19 2N3819 fet 2n3819 transistor VGD25 200UA 2N3819 VDS1
    Text: centrai 2N3 819 *1 Central Semiconductor Corp. central semiconductor Corp. N-CHANNEL SILICON JUNCTION FET JEDEC TO-92 CASE 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 2 N 3819 type is a Silicon N-Channel Junction Field


    OCR Scan     		PDF 2N3819 200UA 2N3819 junction fet transistor 2N3819 2N3O19 2N3819 fet 2n3819 transistor VGD25 200UA 2N3819 VDS1

    2SK546

    Abstract: No abstract text available
    Text: Ordering number: EN 1790B N 0.179 OB 2SK 546 N-Channel Junction Silicon FET Impedance Converter Applications Applications - Impedance conversion • Infrared sensor Features • Low IGSS “ Small ^*iss Absolute Maximum Ratings at Ta=25°C Drain to Source Voltage


    OCR Scan     		PDF 1790B l790B 2SK546 -10UA SC-43 2SK546

    Untitled

    Abstract: No abstract text available
    Text: calodlc High Speed DMOS N-Channel Switch CORPORATION SD403 FEATURES DESCRIPTION • • • • The Calogic SD403 is an N-Channel Enhancement-Mode Lateral DMOS FET. This product has very low capacitance, Crss < 0.4pf typical allowing for high speed switching (tr 1ns).


    OCR Scan     		PDF SD403 SD403 19mmhos) M4322 -80jiSec

    2SK546

    Abstract: No abstract text available
    Text: Ordering number: EN 1790B N 0 .I79 OB 2SK 546 N-Channel Junction Silicon FET Impedance Converter Applications Applications - Impedance conversion • Infrared sensor Features • Low IGSS “ Small ^*iss Absolute Maximum Ratings at Ta=25°C Drain to Source Voltage


    OCR Scan     		PDF 1790B l790B 2SK546 -10uA 2034/2034A SC-43 7tlt17D7b 2SK546

    sd403

    Abstract: CD11G
    Text: High Speed DMOS N-Channel Switch caioqic CORPORATION SD403 FEATURES DESCRIPTION • • • • The Calogic SD403 is an N-Channel Enhancement-Mode Lateral DMOS FET. This product has very low capacitance, Crss < 0.4pf typical allowing for high speed switching (tr 1ns).


    OCR Scan     		PDF SD403 SD403 19mmhos) SD40tance CD11G

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information ^DS O N BVdgs (max) 60V 5.0ft JI BVdss / Order Number / Package TO-92 2N7000 75mA Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement


    OCR Scan     		PDF 2N7000

    SD403CY

    Abstract: SD403 SD403BD XSD403 high speed TTL in fet
    Text: calodlc High Speed DMOS N-Channel Switch CORPORATION SD403 FEATURES DESCRIPTION • • • • The Calogic SD403 is an N-Channel Enhancement-Mode Lateral DMOS FET. This product has very low capacitance, Crss < 0.4pf typical allowing for high speed switching (tr 1ns).


    OCR Scan     		PDF SD403 SD403 19mmhos) M4322 80MSec M4322 SD403CY SD403BD XSD403 high speed TTL in fet

    2SK108

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR FIELD-EFFECT TRANSISTOR 2SK108 FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE DESCRIPTION Unfcmm OUTLINE DRAWING Mitsubishi 2SK108 is a silicon N channnel junction type FET. It is especially ¿5.6M AX designed for low frequency low noise amplify application.


    OCR Scan     		PDF 2SK108 2SK108 100Hz) 70Qtyp SC-43 10Vrms