Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    N-CHANNEL MOSFET SOT-23 3A Search Results

    N-CHANNEL MOSFET SOT-23 3A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL MOSFET SOT-23 3A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL8820 SOT-23-6L Dual N-Channel MOSFET DESCRIPTION The CJL8820 uses advanced trench technology to provide excellent RDS ON and low gate charge. It is ESD protected. This device is suitable


    Original     		PDF OT-23-6L CJL8820 OT-23-6L CJL8820 250uA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL8810 SOT-23-6L Dual N-Channel MOSFET DESCRIPTION The CJL8810 uses advanced trench technology to provide excellent RDS ON and low gate charge. It is ESD protected. This device is suitable


    Original     		PDF OT-23-6L CJL8810 OT-23-6L CJL8810 250uA

    Untitled

    Abstract: No abstract text available
    Text: SSS3402A N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SOT-23 RDS(ON) (m ) Max D 60 @VGS = 10V 25V G 3A 80 @VGS = 4.5V S 170 @VGS = 2.5V D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G SOT-23 package. S


    Original     		PDF SSS3402A OT-23 OT-23

    sot-23 marking RIP

    Abstract: J-STD-020A
    Text: APM2318 N-Channel Enhancement Mode MOSFET Features Pin Description D • 30V/3A, RDS ON =35mΩ(typ.) @ VGS=10V 3 RDS(ON)=40mΩ(typ.) @ VGS=4.5V RDS(ON)=60mΩ(typ.) @ VGS=2.5V • • Super High Dense Cell Design for Extremely SOT-23 Package 1 2 G S Top View of SOT-23


    Original     		PDF APM2318 OT-23 OT-23 sot-23 marking RIP J-STD-020A

    2314 sot-23

    Abstract: 2314 mosfet ANPEC A102 APM2314 J-STD-020A
    Text: APM2314 N-Channel Enhancement Mode MOSFET Features • Pin Description D 20V/2.8A , RDS ON =45mΩ(typ.) @ VGS=4.5V RDS(ON)=55mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged G SOT-23 Package S Top View of SOT-23


    Original     		PDF APM2314 OT-23 OT-23 2314 sot-23 2314 mosfet ANPEC A102 APM2314 J-STD-020A

    N-CHANNEL MOSFET 30V 2A SOT-23

    Abstract: SSS3406
    Text: SSS3406 N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 30V SOT-23 RDS(ON) (m ) Max D 70 @VGS = 10V 3A G 140 @VGS = 4.5V S D FEATURES Super high density cell design for low RDS(ON). G Rugged and reliable. SOT-23 package. S Pb free. o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)


    Original     		PDF SSS3406 OT-23 OT-23 N-CHANNEL MOSFET 30V 2A SOT-23 SSS3406

    APM2701AC

    Abstract: APM2701A apm2701 A104 diode MOSFET P-channel SOT-23-6 AAAX sot 26 Dual N-Channel MOSFET
    Text: APM2701AC Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel D1 20V/3A, S1 D2 RDS(ON)=50mΩ(typ.) @ VGS=4.5V RDS(ON)=65mΩ(typ.) @ VGS=2.5V • G1 P-Channel S2 G2 Top View of SOT-23-6 -20V/-2A, RDS(ON)=90mΩ(typ.) @ VGS=-4.5V


    Original     		PDF APM2701AC -20V/-2A, OT-23-6 APM2701A OT-23-6 JESD-22, APM2701AC apm2701 A104 diode MOSFET P-channel SOT-23-6 AAAX sot 26 Dual N-Channel MOSFET

    mosfet "marking code 44" sot-23-6

    Abstract: APM2706C MOSFET N SOT-23 STD-020C apm27 AB SOT-23-6
    Text: APM2706C Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel D1 S1 30V/3A, D2 RDS(ON)= 55mΩ(typ.) @ VGS= 10V RDS(ON)= 80mΩ(typ.) @ VGS= 4.5V • G1 P-Channel S2 G2 -30V/-2.2A, Top View of SOT-23-6 RDS(ON)= 100mΩ(typ.) @ VGS= -10V


    Original     		PDF APM2706C -30V/-2 OT-23-6 mosfet "marking code 44" sot-23-6 APM2706C MOSFET N SOT-23 STD-020C apm27 AB SOT-23-6

    Untitled

    Abstract: No abstract text available
    Text: SMD Type MOSFET Dual Enhancement Mode MOSFET APM2701CG • Features SOT-23-6 Unit: mm ● RDS(ON) ＜ 70mΩ (V GS = 4.5V) ● RDS(ON) ＜ 110mΩ (VGS = 2.5V) S1 D1 ０．３ｍｉｎ ● N-Channel ：V DS=20V I D=3A D2 ● P-Channel： VDS =-20V ID=-1.5A


    Original     		PDF APM2701CG OT-23-6

    Untitled

    Abstract: No abstract text available
    Text: AP2310AGN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D RDS ON Small Package Outline 65V 80m ID Surface Mount Device 3A S RoHS Compliant & Halogen-Free SOT-23 G D Description


    Original     		PDF AP2310AGN-HF OT-23 AP2310A OT-23 100ms

    AP2310GN

    Abstract: AP2310GN-HF
    Text: AP2310GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline D BVDSS 60V RDS ON 90mΩ ID ▼ Surface Mount Device ▼ RoHS Compliant 3A S SOT-23 Description


    Original     		PDF AP2310GN-HF OT-23 OT-23 AP2310GN AP2310GN-HF

    Untitled

    Abstract: No abstract text available
    Text: SMS2310 3A, 60V, RDS ON 105mΩ Ω N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-23 Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		PDF SMS2310 OT-23 13-Dec-2013

    Untitled

    Abstract: No abstract text available
    Text: AP2310GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Small Package Outline BVDSS 60V RDS ON 90mΩ ID ▼ Surface Mount Device 3A S ▼ RoHS Compliant SOT-23 G D Description


    Original     		PDF AP2310GN-HF OT-23 OT-23 100us 100ms

    N-CHANNEL MOSFET 30V 2A SOT-23

    Abstract: AP2310AGN AP2310A
    Text: AP2310AGN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Small Package Outline ▼ Surface Mount Device BVDSS 65V RDS ON 80mΩ ID 3A S ▼ RoHS Compliant & Halogen-Free SOT-23


    Original     		PDF AP2310AGN-HF OT-23 AP2310A 100us 100ms N-CHANNEL MOSFET 30V 2A SOT-23 AP2310AGN

    Untitled

    Abstract: No abstract text available
    Text: AP2310CGN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D RDS ON Small Package Outline 60V 75m ID Surface Mount Device 3.2A S Halogen Free & RoHS Compliant Product SOT-23 G


    Original     		PDF AP2310CGN-HF OT-23 OT-23 100us 100ms

    Untitled

    Abstract: No abstract text available
    Text: MOSFET SMD Type N-Channel Power MOSFET AP2310GN SOT-23-3 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 • Features ● Simple Drive Requirement 1 D 0.55 ● Surface Mount Device +0.2 1.6 -0.1 +0.2 2.8-0.2 ● Small Package Outline 0.4 3 2 +0.1 0.95-0.1 +0.2 1.9-0.2


    Original     		PDF OT-23-3 100us 100ms

    APM2324

    Abstract: APM2324A STD-020C
    Text: APM2324A N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/3A , RDS ON =50mΩ(typ.) @ VGS=4.5V RDS(ON)=90mΩ(typ.) @ VGS=2.5V • • • Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOT-23


    Original     		PDF APM2324A OT-23 APM2324 APM2324 APM2324A STD-020C

    Untitled

    Abstract: No abstract text available
    Text: AP2306AGEN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Capable of 2.5V Gate Drive BVDSS D RDS ON Small Outline Package Surface Mount Device S RoHS Compliant & Halogen-Free SOT-23 30V 50m ID 4.1A Rating


    Original     		PDF AP2306AGEN-HF OT-23 OT-23 100us 100ms

    Untitled

    Abstract: No abstract text available
    Text: AP2326GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D 30V RDS ON Small Package Outline Surface Mount Device S Halogen Free & RoHS Compliant Product SOT-23 42m ID 4.7A G D


    Original     		PDF AP2326GN-HF OT-23 OT-23 100us 100ms

    Untitled

    Abstract: No abstract text available
    Text: AP2314GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS Capable of 2.5V gate drive Lower on-resistance RDS ON D ID Surface mount package RoHS Compliant & Halogen-Free 75m 3.5A S SOT-23 Description 20V


    Original     		PDF AP2314GN-HF OT-23 OT-23 100ms

    Untitled

    Abstract: No abstract text available
    Text: AP2328GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive D ▼ Small Outline Package ▼ Surface Mount Device S ▼ Halogen Free & RoHS Compliant Product SOT-23 BVDSS 30V RDS ON


    Original     		PDF AP2328GN-HF OT-23 100us 100ms

    L-63

    Abstract: IRLML2402 sot-23 marking code pe marking SH SOT23 mosfet marking wo sot-23 MARKING tAN SOT-23 MARKING EK SOT-23
    Text: PD - 9.1257C IRLML2402 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = 20V G RDS(on) = 0.25Ω S Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 1257C IRLML2402 OT-23 L-63 IRLML2402 sot-23 marking code pe marking SH SOT23 mosfet marking wo sot-23 MARKING tAN SOT-23 MARKING EK SOT-23

    MARKING TR SOT23-3 P MOSFET

    Abstract: APM2324AA mosfet marking code a24x APM2324A STD-020C
    Text: APM2324AA N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/3A, RDS ON = 50mΩ(typ.) @ VGS= 4.5V RDS(ON)= 65mΩ(typ.) @ VGS= 2.5V RDS(ON)= 120mΩ(typ.) @ VGS= 1.8V • • • Super High Dense Cell Design Top View of SOT-23 Reliable and Rugged


    Original     		PDF APM2324AA OT-23 APM2324A APM2324A MIL-STD-883D-2003 883D-1005 JESD-22-B, 883D-1011 MARKING TR SOT23-3 P MOSFET APM2324AA mosfet marking code a24x STD-020C

    AP2310GN

    Abstract: 60V 3A diode MOSFET N-Channel 1a vgs 0.9 sot-23
    Text: AP2310GN Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline D ▼ Surface Mount Device BVDSS 60V RDS ON 90mΩ ID 3A S SOT-23 Description G Advanced Power MOSFETs utilized advanced processing techniques to


    Original     		PDF AP2310GN OT-23 OT-23 100us 100ms 270/W AP2310GN 60V 3A diode MOSFET N-Channel 1a vgs 0.9 sot-23