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    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL8810 SOT-23-6L Dual N-Channel MOSFET DESCRIPTION The CJL8810 uses advanced trench technology to provide excellent RDS ON and low gate charge. It is ESD protected. This device is suitable


    Original     		PDF OT-23-6L CJL8810 OT-23-6L CJL8810 250uA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL8810 Dual N-Channel Enhancement Mode Field Effect Transistor DESCRIPTION The CJL8810 use advanced trench technology to provide excellent RDS ON and low gate charge. It is ESD protected. This device is suitable


    Original     		PDF OT-23-6L CJL8810 CJL8810 OT-23-6L 250uA