FDH45N50F
Abstract: No abstract text available
Text: UniFET TM FDH45N50F 500V N-Channel MOSFET, FRFET Features Description • 45A, 500V, RDS on = 0.12Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDH45N50F
O-247This
FDH45N50F
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F133
Abstract: FDA50N50 FDH50N50 48A110
Text: UniFET FDH50N50_F133 / FDA50N50 TM 500V N-Channel MOSFET Features Description • 48A, 500V, RDS on = 0.105Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDH50N50
FDA50N50
FDA50N50
F133
48A110
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F133
Abstract: FDA50N50 FDH50N50
Text: UniFET FDH50N50_F133 / FDA50N50 TM 500V N-Channel MOSFET Features Description • 48A, 500V, RDS on = 0.105Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDH50N50
FDA50N50
FDA50N50
F133
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FDH45N50F
Abstract: No abstract text available
Text: UniFET TM FDH45N50F 500V N-Channel MOSFET, FRFET Features Description • 45A, 500V, RDS on = 0.12Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDH45N50F
O-247
FDH45N50F
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TO-3PN
Abstract: No abstract text available
Text: UniFET FDH50N50_F133 / FDA50N50 TM 500V N-Channel MOSFET Features Description • 48A, 500V, RDS on = 0.105Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDH50N50
FDA50N50
FDA50N50
TO-3PN
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F133
Abstract: FDH45N50F
Text: UniFET FDH45N50F_F133 TM 500V N-Channel MOSFET, FRFET Features Description • 45A, 500V, RDS on = 0.12Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDH45N50F
F133
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Untitled
Abstract: No abstract text available
Text: UniFET TM FDH45N50F_F133 500V N-Channel MOSFET, FRFET Features Description • 45A, 500V, RDS on = 0.12Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDH45N50F
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Untitled
Abstract: No abstract text available
Text: TM UniFET FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Features Description • 48A, 500V, RDS on = 0.105Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDH50N50
FDA50N50
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FDA50N50
Abstract: FDH50N50
Text: TM FDH50N50 / FDA50N50 500V N-Channel MOSFET Features Description • 48A, 500V, RDS on = 0.105Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 105 nC)
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FDH50N50
FDA50N50
FDA50N50
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DL2M50N5
Abstract: mosfet 500V 50A Mosfet 100V 50A
Text: D W DAWIN Electronics TM DL2M50N5 May. 2009 500V DUAL N-Channel MOSFET Description Equivalent Circuit and Package DAWIN’S Dual power MOSFET devices are designed for switching applications of high voltage and current. You have to connect external fast recovery diode reverse connected across each MOSFET
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DL2M50N5
150nC
DL2M50N5
mosfet 500V 50A
Mosfet 100V 50A
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXFR44N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500V 25A Ω 154mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions
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IXFR44N50Q3
250ns
ISOPLUS247
E153432
44N50Q3
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFR44N50Q3 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500V 25A Ω 154mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions
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IXFR44N50Q3
250ns
ISOPLUS247
E153432
44N50Q3
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IXFR44N50Q3
Abstract: 44N50Q3
Text: Preliminary Technical Information IXFR44N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500V 25A Ω 154mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions
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IXFR44N50Q3
250ns
ISOPLUS247
E153432
44N50Q3
IXFR44N50Q3
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OMD100
Abstract: OMD200 OMD400 OMD500
Text: OMD100 OMD400 OMD200 OMD500 FOUR N-CHANNEL MOSFETS IN HERMETIC POWER PACKAGE 100V Thru 500V, Up To 25 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • Isolated Hermetic Metal Package Fast Switching Low RDS on Available Screened To MIL-S-19500, TX, TXV and S Levels
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OMD100
OMD400
OMD200
OMD500
MIL-S-19500,
OMD100
OMD400
OMD500
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P21NM50N
Abstract: W21NM50N B21NM50N f21nm50n STP21NM50N-STF21NM50N-STW21NM50N STF21NM50N STW2 TO-220 footprint STP21NM50N STW21NM50N
Text: STP21NM50N-STF21NM50N-STW21NM50N STB21NM50N - STB21NM50N-1 N-CHANNEL 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET Table 1: General Features TYPE VDSS @Tjmax STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N •
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STP21NM50N-STF21NM50N-STW21NM50N
STB21NM50N
STB21NM50N-1
O-220/FP/D2/I2PAK/TO-247
STB21NM50N
STF21NM50N
STP21NM50N
STW21NM50N
O-220
P21NM50N
W21NM50N
B21NM50N
f21nm50n
STP21NM50N-STF21NM50N-STW21NM50N
STF21NM50N
STW2
TO-220 footprint
STP21NM50N
STW21NM50N
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P21NM50
Abstract: F21NM50N P21NM50N W21NM50
Text: STP/F21NM50N - STW21NM50N STB21NM50N - STB21NM50N-1 N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N 550V 550V 550V
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STP/F21NM50N
STW21NM50N
STB21NM50N
STB21NM50N-1
O-220/FP/D2/I2PAK/TO-247
STB21NM50N
STF21NM50N
STP21NM50N
P21NM50
F21NM50N
P21NM50N
W21NM50
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F21NM50N
Abstract: P21NM50N STF21NM50N W21NM50N F21NM50 STB21NM50
Text: STP/F21NM50N - STW21NM50N STB21NM50N - STB21NM50N-1 N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh Power MOSFET General features VDSS Type @Tjmax STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N 550V 550V 550V
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STP/F21NM50N
STW21NM50N
STB21NM50N
STB21NM50N-1
O-220/FP/D2/I2PAK/TO-247
STB21NM50N-1
STF21NM50N
STP21NM50N
F21NM50N
P21NM50N
W21NM50N
F21NM50
STB21NM50
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f21nm50n
Abstract: W21NM50N P21NM50N F21NM50 IPAK marked code tc MOSFET MARKING STP N-Channel mosfet 400v 25A STMicroelectronics DIODE marking code st marking code
Text: STP/F21NM50N - STW21NM50N STB21NM50N - STB21NM50N-1 N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N 550V 550V 550V
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STP/F21NM50N
STW21NM50N
STB21NM50N
STB21NM50N-1
O-220/FP/D2/I2PAK/TO-247
STB21NM50N
STF21NM50N
STP21NM50N
f21nm50n
W21NM50N
P21NM50N
F21NM50
IPAK
marked code tc
MOSFET MARKING STP
N-Channel mosfet 400v 25A
STMicroelectronics DIODE marking code
st marking code
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F21NM50N
Abstract: P21NM50N W21NM50N F21NM50 w21nm50 STW21NM50 P21NM50 STB21NM50N STB21NM50N-1 STF21NM50N
Text: STP/F21NM50N - STW21NM50N STB21NM50N - STB21NM50N-1 N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax STB21NM50N STB21NM50N-1 STF21NM50N STP21NM50N STW21NM50N 550V 550V 550V
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STP/F21NM50N
STW21NM50N
STB21NM50N
STB21NM50N-1
O-220/FP/D2/I2PAK/TO-247
STB21NM50N
STF21NM50N
STP21NM50N
F21NM50N
P21NM50N
W21NM50N
F21NM50
w21nm50
STW21NM50
P21NM50
STB21NM50N-1
STF21NM50N
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APT5017
Abstract: APT5017HLL
Text: APT5017HLL 500V 25A 0.170W POWER MOS 7 MOSFET ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT5017HLL
O-258
O-258
APT5017
APT5017HLL
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OMD100
Abstract: OMD200 OMD400
Text: OMDIOO OMD400 QMD200 OMD5QO FOUR N-CHANNEL MOSFETS IN HERMETIC POWER PACKAGE 100V Thru 500V, Up To 25 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • Isolated Hermetic Metal Package Fast Switching Low RDs on Available Screened To MIL-S-19500, TX, TXV and S Levels
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OMD400
MIL-S-19500,
OMD100
OMD200
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20 amp MOSFET transistor
Abstract: N and P MOSFET
Text: OM8OOISC OM8003SC OM8002SC OM8004SC POWER MOSFET WITH GATE DRIVE CIRCUIT IN 6-PIN HERMETIC PACKAGE omnirel corp 43E D • bTô^QTB QGQQSTb 7 MOMNI 100V Thru 500V, Up To 35 Amp, N-Channel MOSFET With Low Power Gate Drive Circuitry FEATURES • Isolated Hermetic Package
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OM803
OM8001
OM8002
OM8003
OM8004
OM8004
20 amp MOSFET transistor
N and P MOSFET
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Untitled
Abstract: No abstract text available
Text: OMDIOO OMD4ÛO OMD2QO OMD5QO FOUR N-CHANNEL MOSFETS IN HERMETIC POWER PACKAGE 100V Thru 500V, Up To 25 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • Isolated Hermetic Metal Package Fast Switching Low RDs on Available Screened To MIL-S-19500, TX, TXV and S Levels
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MIL-S-19500,
b7STD73
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100 amp npn mosfet
Abstract: 100 amp mosfet 400v 20 amp mosfet 500V 25A Mosfet pnp 500v OM8001SC OM8002SC OM8003SC OM8004SC OM803
Text: T M3E D bTÛ'JÜTB OOQQSTb 7 IOMNI OM 8OOISC OM8003SC OM8002SC OM8004SC POWER MOSFET WITH GATE DRIVE CIRCUIT IN 6-PIN HERMETIC PACKAGE OMNIREL CÔRP 100V Thru 500V, Up To 35 Amp, N-Channel MOSFET With Low Power Gate Drive Circuitry FEATURES • Isolated Hermetic Package
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OM8003SC
OM8002SC
OM8004SC
OM803
the003
QM8004
100 amp npn mosfet
100 amp mosfet
400v 20 amp mosfet
500V 25A Mosfet
pnp 500v
OM8001SC
OM8004SC
OM803
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