Untitled
Abstract: No abstract text available
Text: BF256LA Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)5.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)
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BF256LA
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Untitled
Abstract: No abstract text available
Text: BF256LB Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)5.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)
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BF256LB
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Untitled
Abstract: No abstract text available
Text: BF256LC Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)5.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)
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BF256LC
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Untitled
Abstract: No abstract text available
Text: BF256 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A)100m I(G) Max. (A) Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)5.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)
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BF256
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Untitled
Abstract: No abstract text available
Text: BF256SM Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)5.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)
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BF256SM
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bf256l
Abstract: No abstract text available
Text: BF256L Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)5.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)
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BF256L
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Untitled
Abstract: No abstract text available
Text: BF256B Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)5n @V(GS) (V) (Test Condition)20 V(GS)off Min. (V) I(DSS) Max. (A)13m
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BF256B
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BF256C
Abstract: No abstract text available
Text: BF256C Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)5n @V(GS) (V) (Test Condition)20 V(GS)off Min. (V) I(DSS) Max. (A)18m
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BF256C
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Untitled
Abstract: No abstract text available
Text: BF256A Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)5n @V(GS) (V) (Test Condition)20 V(GS)off Min. (V) I(DSS) Max. (A)7m
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BF256A
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BC237
Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
Text: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
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1SS383T1
2N3819
2N3903,
2N3904
2N3906
2N4401
2N4403
2N5087
2N5088,
2N5089
BC237
BC847BPDW1T1 Series
BC548
low noise transistors bc638
cbc550c
BC307
2N5550* surface mount
BC212
BSR58LT1
NSDEMN11XV6T1
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Untitled
Abstract: No abstract text available
Text: BF256A BF256A is a Preferred Device JFET - General Purpose N–Channel N–Channel Junction Field Effect Transistor designed for VHF and UHF applications. • • • • http://onsemi.com Low Cost TO–92 Type Package Forward Transfer Admittance, Yfs = 4.5 mmhos Min
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BF256A
BF256A
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BF256A
Abstract: BF256
Text: BF256A BF256A is a Preferred Device JFET - General Purpose N−Channel N−Channel Junction Field Effect Transistor designed for VHF and UHF applications. • • • • http://onsemi.com Low Cost TO−92 Type Package Forward Transfer Admittance, Yfs = 4.5 mmhos Min
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BF256A
BF256A
BF256
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BF256A
Abstract: BF256A circuit n channel jfet BF256A BF256
Text: BF256A BF256A is a Preferred Device JFET - General Purpose N–Channel N–Channel Junction Field Effect Transistor designed for VHF and UHF applications. • • • • http://onsemi.com Low Cost TO–92 Type Package Forward Transfer Admittance, Yfs = 4.5 mmhos Min
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BF256A
BF256A
r14525
BF256A/D
BF256A circuit
n channel jfet BF256A
BF256
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E112 jfet
Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Text: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261
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LS422
LS423
LS424
LS425
LS426
LS832
LS833
LS4391
LS5911
E112 jfet
siliconix E412
NPD5564
jfet e300
NPD5566
DATA SHEET OF FET BFW10
E402 dual jfet
E430 jfet
E310 JFET N
NPD5565
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k2645
Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt
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MK135
MK136
MK137
MK138
MK139
MK140
Mk142
MK145
MK155
157kr
k2645
k4005
U664B
mosfet k4005
MB8719
transistor mosfet k4004
SN16880N
stk5392
STR451
BC417
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PA0016
Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
Text: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30
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14-dagar
PA0016
STR11006
SO41P
PIONEER PA0016
7 segment to bcd converter 74c915
SAJ141
74HC145
tms1122
IC PA0016
KOR 2310 transistor
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2N5458 NATIONAL SEMICONDUCTOR
Abstract: to236 2n4338 MMBFJ201 MMBFJ202 2N5458 BF244A BF245C JFET 2N3684 2N3686 2N4338
Text: JFET General Purpose continued 7 baE T> m b 5 0 1 1 3 0 003T H T fl bTO « N S C S . NATL SEMICON]) ( DISCRETE ) N Channel V p @ V DSlD Device 3 2N3684 2N3686 2N3822 PN4303 2N4338 2N4339 2N4340 2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 BF244Ä BF245A
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b501130
003THTfl
2N3684
2N3686
2N3822
PN4303
2N4338
T0-18
2N4339
2N5458 NATIONAL SEMICONDUCTOR
to236 2n4338
MMBFJ201
MMBFJ202
2N5458
BF244A
BF245C JFET
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e304 fet
Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that
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K28742
44449SILXHX
e304 fet
JFET TRANSISTOR REPLACEMENT GUIDE j201
bfq13
e420 dual jfet
JFET TIS88
Siliconix FET Design Catalog
E112 jfet
jfet e300
BFW10 JFET
2N3686
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bc 7-25 pnp
Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Text: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K
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1N914
1N4148
1N4150
1N4565
1N4565A
1N4566
1N4566A
1N4570
1N4570A
1N4571
bc 7-25 pnp
transistor bc 7-25
transistor 724
731 zener diode
transistor B 722
transistor Bc 2n2222
transistor BC 176
MPS6521
transistor 2N5952
TP2222A transistor
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bc 7-25 pnp
Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Text: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30
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1N914
1N4148
1N4150
1N5229
1N5230
1N5231
1N5232
1N5233
1N5234
1N5235
bc 7-25 pnp
transistor bc 7-25
2N5245 transistor
2n3819 cross reference
TO-266AA
2N3904 731
jFET Array
BFR30 "cross reference"
2N5308 cross reference
266AA
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BF256
Abstract: JFET bf256 BF256B BF256C 2N4416
Text: M O T O R O L A SC XSTRS/R F 12 E D | b3fa?aS4 GOflbbaa S | BF256, B, C CASE 29-04, STYLE 23 TO-92 TO-226AA 1 D rain M A X IM U M RATINGS S ym b ol Value U n it Drain-Source Voltage VDS ±30 Vdc Drain-Gate Voitage Vd G 30 Vdc Gate-Source Voltage Vg S 30
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BF256,
O-226AA)
2N4416
BF256
JFET bf256
BF256B
BF256C
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BF256
Abstract: JFET bf256 BF256 MOTOROLA N-Channel JFET BF256 BF256B BF256C 2n4416 motorola BF256A 2N4416
Text: m otorola 6367254 sc -c x s t r s / r M O T OR O L A D F|t.3b7SS4 f > SC CXSTRS/R F 96D 0GÛ2bE4 82624 r - z - 'I# ' BF256,A,B,C C A SE 29-04, STYLE 23 TO-92 (TO-226AA) M A X IM U M RATINGS S ym bo l Value Unit Drain-Source Voltage Vd s ±30 Vdc Drain-Gate Voltage
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BF256
O-226AA)
2N4416
BF256A
BF256B
BF256C
BF256,
JFET bf256
BF256 MOTOROLA
N-Channel JFET BF256
2n4416 motorola
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PA 0016 PIONEER
Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
Text: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete
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J-23548
K28742
PA 0016 PIONEER
Pioneer PA 0016
transistors br 6822
MPF104
I9951D
Johnson motor 2 607 022 013
2SK109 equivalent
V01000J
DG5043CK
IRF4431
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e420 dual jfet
Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
Text: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.
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