BSR56
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BSR56; BSR57; BSR58 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 DESCRIPTION Symmetrical silicon n-channel
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BSR56;
BSR57;
BSR58
MAM385
BSR56
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MBK288
Abstract: PMBF4393 PMBF4391 PMBF4392
Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBF4391; PMBF4392; PMBF4393 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification PMBF4391; PMBF4392; PMBF4393 N-channel FETs DESCRIPTION Symmetrical silicon n-channel
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PMBF4391;
PMBF4392;
PMBF4393
MAM385
MBK288
PMBF4393
PMBF4391
PMBF4392
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PDF
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BSR58
Abstract: BSR56 BSR57 sot23 marking code
Text: DISCRETE SEMICONDUCTORS DATA SHEET BSR56; BSR57; BSR58 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 DESCRIPTION Symmetrical silicon n-channel
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Original
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BSR56;
BSR57;
BSR58
MAM385
BSR58
BSR56
BSR57
sot23 marking code
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PDF
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PMBF4391
Abstract: PMBF4392 PMBF4393 MBK288
Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBF4391; PMBF4392; PMBF4393 N-channel FETs Product specification April 1995 NXP Semiconductors Product specification PMBF4391; PMBF4392; PMBF4393 N-channel FETs DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect
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Original
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PMBF4391;
PMBF4392;
PMBF4393
MAM385
R77/02/9
PMBF4391
PMBF4392
PMBF4393
MBK288
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PDF
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Bft46
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic
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BFT46
MAM385
R77/02/pp11
Bft46
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CRS15
Abstract: BFT46 fet junction n-channel transistor FET MARKING CODE MARKING CODE FET MDA267 Silicon N-Channel Junction FET sot23 Philips fet SOT23 code marking MDA274 MARKING m3p
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect
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Original
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BFT46
MAM385
CRS15
BFT46
fet junction n-channel transistor
FET MARKING CODE
MARKING CODE FET
MDA267
Silicon N-Channel Junction FET sot23
Philips fet SOT23 code marking
MDA274
MARKING m3p
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PDF
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CRS15
Abstract: BFT46
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic
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BFT46
MAM385
R77/02/pp11
CRS15
BFT46
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PDF
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d1711
Abstract: 2SK1285 C11531E
Text: DATA SHEET N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1285 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK1285 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. 8.5 MAX. 3.2 ±0.2 2.8 MAX.
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2SK1285
2SK1285
C11531E)
d1711
C11531E
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PDF
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FDMS7700S
Abstract: 501B 8 P mosfet 9630
Text: FDMS7700S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.4 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A
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FDMS7700S
FDMS7700S
501B 8 P
mosfet 9630
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FDMS7600AS
Abstract: 501B 8 P
Text: FDMS7600AS Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.8 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A
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FDMS7600AS
FDMS7600AS
501B 8 P
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PDF
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FDML7610S
Abstract: No abstract text available
Text: FDML7610S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 28 A, 4.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A
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FDML7610S
FDML7610S
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PDF
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FDML7610S
Abstract: C3028 561b
Text: FDML7610S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 28 A, 4.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A
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FDML7610S
FDML7610S
C3028
561b
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PDF
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RTJC
Abstract: No abstract text available
Text: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m: P-Channel: -40V, -20A, 54m: Features General Description Q1: N-Channel These dual N and P-Channel enhancement Max rDS on = 24m: at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s
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FDD8424H
FDD8424H
RTJC
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PDF
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Untitled
Abstract: No abstract text available
Text: FDML7610S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 28 A, 4.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A
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FDML7610S
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PDF
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Untitled
Abstract: No abstract text available
Text: FDMS7600AS Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.8 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A
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FDMS7600AS
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PDF
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a2791
Abstract: M20S PA2791GR G1820 diode MARKING M16
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2791GR SWITCHING N- AND P-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The μ PA2791GR is N- and P-channel MOS Field Effect Transistors designed for switching application. 8 5 N-channel 1 : Source 1
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PA2791GR
PA2791GR
a2791
M20S
G1820
diode MARKING M16
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PDF
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Untitled
Abstract: No abstract text available
Text: SELECTION GUIDE Page N-channel junction field-effect transistors 8 N-channel junction field-effect transistors for switching 10 P-channel junction field-effect transistors for switching 12 N-channel single-gate MOS-FETs for switching 12 N-channel dual-gate MOS-FETs
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OCR Scan
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PDF
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2SK1287
Abstract: MEI-1202 TEA-1035
Text: DATA SHEET NEC . « N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR _ f 2SK1287 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK1287 is N-channel M O S Field Effect Transistor designed for in millimeters
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OCR Scan
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2SK1287
IEI-1209)
MEI-1202
TEA-1035
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PDF
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JRC 2374
Abstract: JRC 1496 K1495 ic 1496 ic 1496 applications k1496 1496-Z K149 2SK1496 R/JRC+2374
Text: N-CHANNEL MOS FIELD EFFECT POWER TRANSISTORS 2SK1495,2SK1495-Z/2SK149&2SK1496-Z SW ITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1495/2SK1496 is N-channel MOS Field Effect Tr«isistor de signed for high voltage switching applications.
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OCR Scan
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2SK1495
2SK1495-Z/2SK149
2SK1496-Z
2SK1495/2SK1496
El-1209)
1495-Z/2S
1496-Z
JRC 2374
JRC 1496
K1495
ic 1496
ic 1496 applications
k1496
1496-Z
K149
2SK1496
R/JRC+2374
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PDF
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2SK1664
Abstract: No abstract text available
Text: DATA SHEET i N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1664 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1664 is N-channel M O S Field Effect Transistor designed for PACKAGE DIMENSIONS in millimeters high voltage switching applications.
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OCR Scan
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2SK1664
2SK1664
IEI-1209)
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PDF
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2SK1285
Abstract: MEI-1202 TEA-1035
Text: DATA SHEET NEC ^N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1285 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK1285 is N-channel MOS Field Effect Transistor in millimeters designed for solenoid, m otor and lamp driver.
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OCR Scan
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2SK1285
MEI-1202
TEA-1035
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PDF
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Untitled
Abstract: No abstract text available
Text: 4AM15 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N Channel: RDSu,n < 0 .5 £1, V os = 10 V, ID = 2 A P Channel: RDS on) < 0 .9 Vas = - 1 0 V, ID = - 2 A • Low drive current
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OCR Scan
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4AM15
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PDF
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transistor d 2389
Abstract: 2SK1290 MEI-1202 TEA-1035 TR240 iE25
Text: DATA SHEET NEC r N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1290 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK1290 is N-channel MOS Field Effect Transistor designed for in millimeters solenoid, m otor and lamp driver.
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OCR Scan
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2SK1290
IEI-1209)
transistor d 2389
MEI-1202
TEA-1035
TR240
iE25
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PDF
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2SK1492
Abstract: MEI-1202 TEA-1035
Text: _ DATA SHEET NEC r N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1492 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION The 2SK1492 is N-channel MOS Field Effect Transistor de {in millimeters signed fo r high voltage switching applications.
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OCR Scan
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2SK1492
MEI-1202
TEA-1035
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PDF
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