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    N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTOR Search Results

    N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    GC321AD7LP103KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331AD7LQ153KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331CD7LQ473KX19K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC343DD7LP334KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NDT453N

    Abstract: 201A3 CBVK741B019 F63TNR F852 PN2222A
    Text: September 1996 NDT453N N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		NDT453N NDT453N 201A3 CBVK741B019 F63TNR F852 PN2222A PDF

    CBVK741B019

    Abstract: F63TNR F852 NDT451AN PN2222A
    Text: July 1996 NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		NDT451AN CBVK741B019 F63TNR F852 NDT451AN PN2222A PDF

    Untitled

    Abstract: No abstract text available
    Text: February 2009 NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		NDT451AN NDT451AN PDF

    NDT453N

    Abstract: No abstract text available
    Text: September 1996 NDT453N N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		NDT453N NDT453N PDF

    NDT451AN

    Abstract: No abstract text available
    Text: July 1996 NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		NDT451AN NDT451AN PDF

    NDH853N

    Abstract: No abstract text available
    Text: N August 1996 PRELIMINARY NDH853N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    Original     		NDH853N NDH853N PDF

    508B C

    Abstract: ndp508 NDP508BE NDB508A NDB508AE NDB508B NDB508BE NDP508A NDP508AE NDP508B
    Text: N May 1994 NDP508A / NDP508AE / NDP508B / NDP508BE NDB508A / NDB508AE / NDB508B / NDB508BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's


    Original     		NDP508A NDP508AE NDP508B NDP508BE NDB508A NDB508AE NDB508B NDB508BE NDP508 508B C NDP508BE NDB508BE PDF

    NDB610A

    Abstract: NDB610AE NDB610B NDB610BE NDP610A NDP610AE NDP610B NDP610BE DON60 MJ-26
    Text: N May 1994 NDP610A / NDP610AE / NDP610B / NDP610BE NDB610A / NDB610AE / NDB610B / NDB610BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's


    Original     		NDP610A NDP610AE NDP610B NDP610BE NDB610A NDB610AE NDB610B NDB610BE NDP610 NDB610BE NDP610BE DON60 MJ-26 PDF

    GS 069 pwm

    Abstract: gs 069 710b NDB710A NDB710AE NDB710B NDB710BE NDP710A NDP710AE NDP710B
    Text: N May 1994 NDP710A / NDP710AE / NDP710B / NDP710BE NDB710A / NDB710AE / NDB710B / NDB710BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's


    Original     		NDP710A NDP710AE NDP710B NDP710BE NDB710A NDB710AE NDB710B NDB710BE NDP710 GS 069 pwm gs 069 710b NDB710BE PDF

    NDB608A

    Abstract: NDB608AE NDB608B NDB608BE NDP608A NDP608AE NDP608B NDP608BE
    Text: N May 1994 NDP608A / NDP608AE / NDP608B / NDP608BE NDB608A / NDB608AE / NDB608B / NDB608BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's


    Original     		NDP608A NDP608AE NDP608B NDP608BE NDB608A NDB608AE NDB608B NDB608BE NDP608 NDB608BE NDP608BE PDF

    NDT451AN

    Abstract: No abstract text available
    Text: February 2009 NDT451AN N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		NDT451AN NDT451AN PDF

    NDT410EL

    Abstract: No abstract text available
    Text: N August 1996 NDT410EL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    Original     		NDT410EL NDT410EL PDF

    408B

    Abstract: NDB408A NDB408AE NDB408B NDB408BE NDP408 NDP408A NDP408AE NDP408B NDP408BE
    Text: N May 1994 NDP408A / NDP408AE / NDP408B / NDP408BE NDB408A / NDB408AE / NDB408B / NDB408BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's


    Original     		NDP408A NDP408AE NDP408B NDP408BE NDB408A NDB408AE NDB408B NDB408BE NDP408 408B NDB408BE NDP408BE PDF

    NDB510A

    Abstract: NDB510AE NDB510B NDB510BE NDP510A NDP510AE NDP510B NDP510BE
    Text: N May 1994 NDP510A / NDP510AE / NDP510B / NDP510BE NDB510A / NDB510AE / NDB510B / NDB510BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's


    Original     		NDP510A NDP510AE NDP510B NDP510BE NDB510A NDB510AE NDB510B NDB510BE NDP510 NDB510BE NDP510BE PDF

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r PDF

    IRF612

    Abstract: IRF613 IRF611 IRF610 IRFB10 power MOSFET IRF610 IRF 513#
    Text: Standard Power MOSFETs- IRF610, IRF611, IRF612, IRF613 File Number 1576 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 2.0A and 2.5A, 150V-200V


    OCR Scan     		IRF610, IRF611, IRF612, IRF613 50V-200V IRF612 IRF613 IRF611 IRF610 IRFB10 power MOSFET IRF610 IRF 513# PDF

    IRF530

    Abstract: IRF532 L10M IRF531 IRF533 J56-1 IRF530 mosfet
    Text: Standard Power MOSFETs- IRF530, IRF531, IRF532, IRF533 File Num ber 1575 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 12A and 14A, 60V-100V


    OCR Scan     		IRF530, IRF531, IRF532, IRF533 0V-100V IRF532 50V0SS IRF530 L10M IRF531 J56-1 IRF530 mosfet PDF

    78017

    Abstract: 7S1 zener diode NDP605A NDP605B NDP606A NDP606B
    Text: March 1993 Semiconductor NDP605A/NDP605B, NDP606A/NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's proprietary, high


    OCR Scan     		NDP605A/NDP605B, NDP606A/NDP606B LSQ1130 78017 7S1 zener diode NDP605A NDP605B NDP606A NDP606B PDF

    B5G1

    Abstract: ndp605A TO-220 NDP606A NDP605A NDP605B NDP606B zener diode u41
    Text: March 1993 Semiconductor NDP605A/NDP605B, NDP606A/NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's proprietary, high


    OCR Scan     		NDP605A/NDP605B, NDP606A/NDP606B 0-1B0-534 B5G1 ndp605A TO-220 NDP606A NDP605A NDP605B NDP606B zener diode u41 PDF

    ndp606a

    Abstract: No abstract text available
    Text: National Semiconductor March 1993 NDP605A/NDP605B, NDP606A/NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's proprietary, high


    OCR Scan     		NDP605A/NDP605B, NDP606A/NDP606B ndp606a PDF

    IRFD321

    Abstract: IRFD322 IRFD323 transistor d722 IRFD320 irf032
    Text: Standard Power MOSFETs- IRFD320, IRFD321, IRFD322, IRFD323 File Number 2325 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 0.5 A and 0.4 A, 350 V - 400 V


    OCR Scan     		IRFD320, IRFD321, IRFD322, IRFD323 92CS-33741 IRFD323 IRFD321 IRFD322 transistor d722 IRFD320 irf032 PDF

    B23 zener diode

    Abstract: zener Diode B23 NDP505A NDP506A transmitter and receiver MINI CAMERA HRD-B30M115 B23 j ZENER DIODE NDP505B NDP506B
    Text: National Semiconductor Ontnhfir 1QQ1 NDP505A/NDP505B, NDP506A/NDP506B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National’s proprietary, high


    OCR Scan     		NDP505A/NDP505B, NDP506A/NDP506B hSG113D B23 zener diode zener Diode B23 NDP505A NDP506A transmitter and receiver MINI CAMERA HRD-B30M115 B23 j ZENER DIODE NDP505B NDP506B PDF

    Untitled

    Abstract: No abstract text available
    Text: May 1994 N NDP408A / NDP408AE / NDP408B / NDP408BE NDB408A / NDB408AE / NDB408B / NDB408BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's


    OCR Scan     		NDP408A NDP408AE NDP408B NDP408BE NDB408A NDB408AE NDB408B NDB408BE NDP408 PDF

    NDP505A

    Abstract: B23 j ZENER DIODE NDP506A zener Diode B23
    Text: rvtrih ^r 1QQ1 Semiconductor NDP505A/NDP505B, NDP506A/NDP506B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National’s proprietary, high


    OCR Scan     		NDP505A/NDP505B, NDP506A/NDP506B B1-043-299-2408 hSG113D D3lifci33 NDP505A B23 j ZENER DIODE NDP506A zener Diode B23 PDF