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    N-CHANNEL DUAL GATE Search Results

    N-CHANNEL DUAL GATE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL DUAL GATE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CMLDM7005

    Abstract: Power MOSFET p-Channel n-channel dual CMLDM8005 TR
    Text: Product Brief CMLDM7005 Dual, N-Channel CMLDM8005 (Dual, P-Channel) CMLDM7585 (N & P-Channel) SOT-563 20V, 650mA Dual, Complementary MOSFETs in the miniature SOT-563 package N-Channel P-Channel N & P-Channel Typical Electrical Characteristics Central Semiconductor’s CMLDM7005 (Dual, N-Channel),


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    PDF CMLDM7005 CMLDM8005 CMLDM7585 650mA OT-563 OT-563 CMLDM7005 Power MOSFET p-Channel n-channel dual CMLDM8005 TR

    x1041

    Abstract: No abstract text available
    Text: ADVANCED LINEAR DEVICES, INC. ALD1103 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These


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    PDF ALD1103 ALD1103 ALD1101 ALD1102 CERDIP-14 x1041

    5V GATE TO SOURCE VOLTAGE MOSFET

    Abstract: differential pair cascode Monolithic Transistor Pair ALD1101 ALD1102 ALD1103 Dual N-Channel MOSFET dip package CMOS differential amplifier cascode
    Text: ADVANCED LINEAR DEVICES, INC. ALD1103 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These


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    PDF ALD1103 ALD1103 ALD1101 ALD1102 ALD1103) 5V GATE TO SOURCE VOLTAGE MOSFET differential pair cascode Monolithic Transistor Pair Dual N-Channel MOSFET dip package CMOS differential amplifier cascode

    p-channel mosfet transistor low power

    Abstract: differential pair cascode mosfet vgs 1.2v vds 5V mosfet vgs 5v n channel enhanced mosfet mosfet Vgs 10mV Ald1103 Monolithic Transistor Pair p channel mosfet ALD1101
    Text: ADVANCED LINEAR DEVICES, INC. ALD1103 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These


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    PDF ALD1103 ALD1103 ALD1101 ALD1102 ALD1103) p-channel mosfet transistor low power differential pair cascode mosfet vgs 1.2v vds 5V mosfet vgs 5v n channel enhanced mosfet mosfet Vgs 10mV Monolithic Transistor Pair p channel mosfet

    BF1102

    Abstract: BF1102R
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BF1102; BF1102R Dual N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Jul 01 2000 Apr 11 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FETs FEATURES


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    PDF MBD128 BF1102; BF1102R OT363 BF1102 R77/03/pp14 BF1102 BF1102R

    marking code L2

    Abstract: BF1203 MBL254 8203 dual mosfet mosfet k 9047 mosfet 7503 sot363 Marking DS NXP 9033 transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Dec 04 2001 Apr 25 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203


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    PDF MBD128 BF1203 OT363 R77/03/pp20 marking code L2 BF1203 MBL254 8203 dual mosfet mosfet k 9047 mosfet 7503 sot363 Marking DS NXP 9033 transistor

    BF1203

    Abstract: FET MARKING CODE 8203 dual mosfet
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Dec 04 2001 Apr 25 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203


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    PDF MBD128 BF1203 OT363 613512/03/pp20 BF1203 FET MARKING CODE 8203 dual mosfet

    BF1204

    Abstract: amplifier BF1204 mosfet handbook Dual Gate MOSFET graphs MCD960
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2001 Apr 25 2010 Sep 16 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1204


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    PDF MBD128 BF1204 OT363 R77/03/pp13 BF1204 amplifier BF1204 mosfet handbook Dual Gate MOSFET graphs MCD960

    "MARKING CODE W1*"

    Abstract: BF1102 BF1102R n-channel dual 3010 marking code W2
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BF1102; BF1102R Dual N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Jul 01 2000 Apr 11 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FETs FEATURES


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    PDF MBD128 BF1102; BF1102R OT363 BF1102 603504/03/pp16 "MARKING CODE W1*" BF1102 BF1102R n-channel dual 3010 marking code W2

    9033 transistor

    Abstract: BF1203
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Jun 06 2000 Dec 04 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203


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    PDF MBD128 BF1203 OT363 613512/02/pp20 9033 transistor BF1203

    MARKING 5F SOT363

    Abstract: BF1204 FET MARKING CODE km 1667
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Nov 13 2001 Apr 25 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1204


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    PDF MBD128 BF1204 OT363 613512/02/pp12 MARKING 5F SOT363 BF1204 FET MARKING CODE km 1667

    TRANSISTOR BF1204

    Abstract: BF1204
    Text: DISCRETE SEMICONDUCTORS DAT handbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2001 Apr 25 2010 Sep 16 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1204 PINNING - SOT363


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    PDF MBD128 BF1204 OT363 R77/03/pp13 TRANSISTOR BF1204 BF1204

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 BF1102; BF1102R Dual N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Jul 01 2000 Apr 11 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FETs FEATURES BF1102; BF1102R


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    PDF MBD128 BF1102; BF1102R OT363 BF1102 R77/03/pp14

    BF1203,115

    Abstract: BF1203
    Text: DISCRETE SEMICONDUCTORS DAT handbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Dec 04 2001 Apr 25 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203 PINNING - SOT363


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    PDF MBD128 BF1203 OT363 R77/03/pp20 BF1203,115 BF1203

    5V GATE TO SOURCE VOLTAGE MOSFET

    Abstract: cascode mosfet current mirror Monolithic Transistor Pair mosfet pair ALD1103 ALD1105 ALD1116 ALD1117 differential pair cascode CMOS differential amplifier cascode
    Text: ADVANCED LINEAR DEVICES, INC. ALD1105 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET GENERAL DESCRIPTION APPLICATIONS The ALD1105 is a monolithic dual N-channel and dual P-channel complementary matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are


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    PDF ALD1105 ALD1105 ALD1116 ALD1117 ALD1103. 5V GATE TO SOURCE VOLTAGE MOSFET cascode mosfet current mirror Monolithic Transistor Pair mosfet pair ALD1103 differential pair cascode CMOS differential amplifier cascode

    CTLDM30

    Abstract: No abstract text available
    Text: Product Brief CTLDM303N-M832DS 30V, 3.6A N-Channel CTLDM304P-M832DS (30V, 4.2A P-Channel) Dual, MOSFETs in the TLM832DS package TLM832DS Typical Electrical Characteristics Central Semiconductor’s CTLDM303N-M832DS (Dual, N-Channel) and CTLDM304P-M832DS (Dual, P-Channel) are enhancement-mode


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    PDF CTLDM303N-M832DS CTLDM304P-M832DS TLM832DS TLM832DS CTLDM303N-M832DS CTLDM304P-M832DS 21x9x9 27x9x17 CTLDM30

    TO78 package

    Abstract: dual jfet TO78
    Text: LSU424 HIGH INPUT IMPEDANCE MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix U424 The LSU424 is a high input impedance Monolithic Dual N-Channel JFET The LSU424 monolithic dual n-channel JFET is designed to provide very high input impedance for


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    PDF LSU424 TO78 package dual jfet TO78

    sot-363 n-channel mosfet

    Abstract: sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 CMKDM3590 Dual P-Channel mosfet sot-363 SOT-363 marking th CMKDM3575
    Text: Central CMKDM3590 N-CH/N-CH CMKDM7590 P-CH/P-CH CMKDM3575 N-CH/P-CH SURFACE MOUNT N-CHANNEL AND P-CHANNEL DUAL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual N-Channel and P-Channel


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    PDF CMKDM3590 CMKDM7590 CMKDM3575 OT-363 CMKDM3590: CMKDM7590: CMKDM3575: RATI150 CMKDM7590 sot-363 n-channel mosfet sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 Dual P-Channel mosfet sot-363 SOT-363 marking th

    U426

    Abstract: dual jfet TO78
    Text: LSU426 HIGH INPUT IMPEDANCE MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix U426 The LSU426 is a high input impedance Monolithic Dual N-Channel JFET The LSU426 monolithic dual n-channel JFET is designed to provide very high input impedance for


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    PDF LSU426 U426 dual jfet TO78

    95160

    Abstract: MOSFET 9935 003 SOT363 Dual Gate MOSFET graphs TMF3201J Dual-Gate Mosfet 9935 mosfet 95160 3
    Text: Preliminary Specification TMF3201J Dual N-Channel Dual-Gate MOSFET □ Description SOT363 Unit in mm The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It is consists of two equal dual gate MOSFET amplifiers with


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    PDF TMF3201J OT363 TMF3201J OT363 95160 MOSFET 9935 003 SOT363 Dual Gate MOSFET graphs Dual-Gate Mosfet 9935 mosfet 95160 3

    Untitled

    Abstract: No abstract text available
    Text: LSU424 HIGH INPUT IMPEDANCE MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix U424 The LSU424 is high input impedance Monolithic Dual N-Channel JFET The LSU424 monolithic dual n-channel JFET is designed to provide very high input impedance for


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    PDF LSU424 LSU424 OT-23 OT-23

    AN 7591 POWER AMPLIFIER

    Abstract: an 7591 BF1206 an 7591 power amp dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 NXP Semiconductors Product specification Dual N-channel dual-gate MOS-FET FEATURES BF1206 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single


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    PDF MBD128 BF1206 OT363 R77/01/pp22 AN 7591 POWER AMPLIFIER an 7591 BF1206 an 7591 power amp dual-gate

    transistor 341 20P

    Abstract: marking sot363 20p UHF Dual Gate uhf vhf amplifier dual-gate dual gate fet FET MARKING CODE FET marking codes FET Spec sheet marking 865 amplifier
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 Philips Semiconductors Product specification Dual N-channel dual-gate MOS-FET FEATURES BF1206 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single


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    PDF MBD128 BF1206 OT363 SCA75 20p/01/pp21 transistor 341 20P marking sot363 20p UHF Dual Gate uhf vhf amplifier dual-gate dual gate fet FET MARKING CODE FET marking codes FET Spec sheet marking 865 amplifier

    MOSFET 4466

    Abstract: 4466 8 pin mosfet pin voltage 4466 mosfet
    Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT BF1102 Dual N-channel dual gate MOS-FET Preliminary specification Philips Sem iconductors 1999 May 17 PHILIPS Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102 PINNING - SOT363 FEATURES


    OCR Scan
    PDF BF1102 OT363 BF1102 MOSFET 4466 4466 8 pin mosfet pin voltage 4466 mosfet