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    N-CHANNEL DEPLETION-MODE MOSFET HIGH VOLTAGE Search Results

    N-CHANNEL DEPLETION-MODE MOSFET HIGH VOLTAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL DEPLETION-MODE MOSFET HIGH VOLTAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES


    Original     		PDF UF601 UF601 UF601L-AE3-R UF601G-AE3-R OT-23 QW-R502-699

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF601Q Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601Q is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES


    Original     		PDF UF601Q UF601Q UF601QG-AE3-R UF601QG-AE2-R OT-23 OT-23-3 601QG QW-R502-A25 UF601at

    Untitled

    Abstract: No abstract text available
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD114835/ALD114935 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® VGS th = -3.50V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114835/ALD114935 are high precision monolithic quad/dual depletion mode


    Original     		PDF ALD114835/ALD114935 ALD114835 ALD114835/ALD114935

    Untitled

    Abstract: No abstract text available
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD114813/ALD114913 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® VGS th = -1.30V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114813/ALD114913 are high precision monolithic quad/dual depletion mode


    Original     		PDF ALD114813/ALD114913 ALD114813/ALD114913

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES


    Original     		PDF UF601 UF601 UF601G-AA3-R UF601G-AE3-R OT-223 OT-23 QW-R502-699

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES


    Original     		PDF UF601 UF601 UF601L-AE3-R UF601G-AE3-R UF601L-AE2-R UF601G-AE2-R OT-23 OT-23-3 QW-R502-699

    Untitled

    Abstract: No abstract text available
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD114813/ALD114913 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® VGS th = -1.30V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114813/ALD114913 are high precision monolithic quad/dual depletion mode


    Original     		PDF ALD114813/ALD114913 ALD114813/ALD114913

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET 3 „ DESCRIPTION 1 2 The UTC UF601 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.


    Original     		PDF UF601 UF601 OT-23 SC-59) UF601L-AE3-R UF601G-AE3-R QW-R502-699

    IXTA02N100D2

    Abstract: depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2
    Text: Depletion-Mode Power MOSFETs and Applications Abdus Sattar, IXYS Corporation Applications like constant current sources, solid-state relays, telecom switches and high voltage DC lines in power systems require N-channel Depletion-mode power MOSFET that operates as a normally “on” switch when the gate-to-source voltage is zero VGS=0V .


    Original     		PDF AN-D16, IXTA02N100D2 depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2

    LND01K1-G

    Abstract: No abstract text available
    Text: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement


    Original     		PDF LND01 LND01 DSFP-LND01 A042712 LND01K1-G

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement


    Original     		PDF LND01 LND01 DSFP-LND01 A073012

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement


    Original     		PDF LND01 LND01 DSFP-LND01 NR073012

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement


    Original     		PDF LND01 LND01 DSFP-LND01 B031414

    ALD114904ASAL

    Abstract: No abstract text available
    Text: ADVANCED LINEAR DEVICES, INC. TM e EPAD D LE AB EN ALD114804/ALD114804A/ALD114904/ALD114904A QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY VGS th = -0.40V GENERAL DESCRIPTION APPLICATIONS ALD114804/ALD114804A/ALD114904/ALD114904A are high precision monolithic


    Original     		PDF ALD114804/ALD114804A/ALD114904/ALD114904A characteris010 ALD114904ASAL

    01N100D

    Abstract: 98809b ON 534 TO252 01N1
    Text: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D IXTU 01N100D IXTY 01N100D VDSS = 1000 V ID25 = 100 mA Ω RDS on = 110 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C 1000


    Original     		PDF 01N100D O-220 405B2 01N100D 98809b ON 534 TO252 01N1

    10N100D

    Abstract: DSA003705
    Text: Advance Technical Information High Voltage MOSFET N-Channel, Depletion Mode VDSS = 1000 V = 10 A ID25 RDS on = 1.4 Ω IXTH 10N100D IXTT 10N100D TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C


    Original     		PDF 10N100D 10N100D O-247 O-247 O-268 O-268 DSA003705

    3551S

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTH20N50D IXTT20N50D High Voltage MOSFET VDSX ID25 N-Channel, Depletion Mode = = ≤ RDS on 500V 20A 330mΩ Ω TO-268 G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH20N50D IXTT20N50D O-268 O-247 O-268 O-247) Condit00 3551S

    nd2020

    Abstract: ND2012L ND2020L S-52426 2020L
    Text: ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2012L ND2020L VGS(off) (V) ID (A) 12 - 1.5 to - 4 0.16 20 - 0.5 to - 2.5 0.132 200 Features D D D D D rDS(on) Max (O) Benefits High Breakdown Voltage: 220 V


    Original     		PDF ND2012L/2020L ND2012L ND2020L O-226AA 18-Jul-08 nd2020 ND2012L ND2020L S-52426 2020L

    Untitled

    Abstract: No abstract text available
    Text: ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2012L ND2020L VGS(off) (V) ID (A) 12 - 1.5 to - 4 0.16 20 - 0.5 to - 2.5 0.132 200 Features D D D D D rDS(on) Max (O) Benefits High Breakdown Voltage: 220 V


    Original     		PDF ND2012L/2020L ND2012L ND2020L O-226AA 08-Apr-05

    02N5

    Abstract: IXTP 02N50D
    Text: High Voltage MOSFET N-Channel, Depletion Mode IXTP 02N50D IXTU 02N50D IXTY 02N50D VDSS = 500 V ID25 = 200 mA RDS on = 30 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C 500 V VGS Continuous


    Original     		PDF 02N50D O-220 405B2 02N5 IXTP 02N50D

    Untitled

    Abstract: No abstract text available
    Text: ir e s ft DMCD1 DIE N-Channel Depletion-Mode Lateral DMOS FETs The DMCD is a depletion-mode MOSFET which utilizes our lateral DMOS process to provide low capacitance, fast switching, and high operating frequency. This DMOS process effectively bridges the operating


    OCR Scan     		PDF SD2100

    SD2100

    Abstract: No abstract text available
    Text: SD2100 N-Channel Depletion-Mode Lateral DMOS FET in c o r p o ra t e d The SD2100 is a depletion-mode MOSFET which utilizes our lateral DMOS process to provide low capacitance, fast switching, and high operating frequency. This DMOS process effectively bridges the


    OCR Scan     		PDF SD2100 O-206AF)

    sst2100

    Abstract: LPD-12
    Text: SILICONIX INC IflE D • 0254735 ODIMGOI 1 ■ SD/SST2100 SERIES C T ’S ilic o n ix J J f in c o rp o ra te d N-Channel Depletion-M ode Lateral DMOS FETs - T The SD/SST2100 Series is a depletion-mode MOSFET which utilizes our lateral DMOS process to provide low capacitance, fast switching, and high


    OCR Scan     		PDF SD/SST2100 OT-143 LPD-12 sst2100 LPD-12

    N-Channel Depletion-Mode MOSFET

    Abstract: TA 7061 52426 ND2020L
    Text: Temic ND2012L/2020L Semiconductors N-Channel Depletion-Mode MOSFET Transistors Product Summary P a rt N um ber V<BR DSV M in V) ND2012L ND2020L 200 Features • • • • • High Breakdown Voltage: 220 V Normally “On” Low rDS Switch: 9 Q Low Input and Output Leakage


    OCR Scan     		PDF ND2012L/2020L ND2012L ND2020L O-226AA S-52426--Rev. 14-Apr-97 N-Channel Depletion-Mode MOSFET TA 7061 52426