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    N-CHANNEL DEPLETION MOS Search Results

    N-CHANNEL DEPLETION MOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL DEPLETION MOS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    depletion MOSFET

    Abstract: n channel depletion MOSFET depletion mode mosfet MOSFET HAndbook mosfet depletion depletion mode power mosfet BD 100 V n mosfet depletion note BSD22 Mosfet n-channel
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BSD22 MOSFET N-channel depletion switching transistor Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification MOSFET N-channel depletion switching transistor


    Original     		BSD22 OT143 depletion MOSFET n channel depletion MOSFET depletion mode mosfet MOSFET HAndbook mosfet depletion depletion mode power mosfet BD 100 V n mosfet depletion note BSD22 Mosfet n-channel PDF

    P-Channel Depletion Mosfets

    Abstract: mosfet 2N3796 2N3797 2N3796 MFE825 MFE3002 P-Channel Depletion Mosfet depletion mode mosfet 100 MHz MFE3003 N5484
    Text: MOSFETs Single Gate FIELD-EFFECT TRANSISTORS continued P-CHANNEL Enhancement MOSFETs MOSFETs are available in either depletion/enhancement or enhancement mode (in general, depletion/enhancement devices are operated in the depletion mode and are referred to as depletion devices). They are available in both N- and P-channel,


    OCR Scan     		2N5486 2N4416 2N4416A 2N5245 3N128* P-Channel Depletion Mosfets mosfet 2N3796 2N3797 2N3796 MFE825 MFE3002 P-Channel Depletion Mosfet depletion mode mosfet 100 MHz MFE3003 N5484 PDF

    BSD20

    Abstract: 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion
    Text: _ I l . bb53T31 0012=134 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - S S '- IS ' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type.


    OCR Scan     		bb53T31 BSD20 BSD22 OT-143 bb53131 7Z90790 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion PDF

    BST124

    Abstract: N-Channel depletion mos
    Text: PH IN 711005b □0t=7,ìS2 n b Philips Sem iconductors Product specification N-channel depletion mode vertical D-MOS transistors RQTi9d Q UICK REFERENCE DATA FEATURES SYMBOL • High-speed switching • No secondary breakdown. N-channel depletion mode vertical


    OCR Scan     		711005b BST124 O-126 PINNING-TO-126 MRC195 BST124 N-Channel depletion mos PDF

    3N211

    Abstract: Depletion
    Text: 3N211 Dual Gate Mosfet VHF Amplifier N-Channel - Depletion 8.59 Transistors MOSF. Page 1 of 1 Enter Your Part # Home Part Number: 3N211 Online Store 3N211 Diodes Dual Gate Mosfet VHF Amplifier(N -Channel - Depletion) Transistors Integrated Circuits Optoelectronics


    Original     		3N211 3N211 com/3n211 Depletion PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel depletion mode vertical D-MOS transistors BST124 QUICK REFERENCE DATA FEATURES • High-speed switching SYMBOL • No secondary breakdown. VDs DESCRIPTION N-channel depletion mode vertical D-MOS transistor in a TO-126


    OCR Scan     		BST124 O-126 PDF

    transistors mos

    Abstract: No abstract text available
    Text: 3N212 Dual Gate Mosfet VHF Amplifier N-Channel - Depletion 26.98 Transistors MOS. Page 1 of 1 Enter Your Part # Home Part Number: 3N212 Online Store 3N212 Diodes Dual Gate Mosfet VHF Amplifier(N -Channel - Depletion) Transistors Integrated Circuits Optoelectronics


    Original     		3N212 3N212 com/3n212 transistors mos PDF

    Untitled

    Abstract: No abstract text available
    Text: BSD12 J \ _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		BSD12 7Z90791 PDF

    BSD12

    Abstract: depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor
    Text: BSD12 _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		BSD12 7Z907 a03ST0t. BSD12 depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor PDF

    ALD110900

    Abstract: depletion MOSFET n channel depletion MOSFET N-Channel Depletion-Mode MOSFET N-Channel Depletion-Mode MOSFET high voltage ultra low igss pA ALD110800 ALD114804 ALD114813 ALD114813PCL
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD114813/ALD114913 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® VGS th = -1.30V MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114813/ALD114913 are monolithic quad/dual depletion mode N-Channel


    Original     		ALD114813/ALD114913 ALD114813/ALD114913 ALD110900 depletion MOSFET n channel depletion MOSFET N-Channel Depletion-Mode MOSFET N-Channel Depletion-Mode MOSFET high voltage ultra low igss pA ALD110800 ALD114804 ALD114813 ALD114813PCL PDF

    ultra low igss pA

    Abstract: ALD110800 depletion MOSFET Depletion-Mode MOSFET N-Channel Depletion-Mode MOSFET ALD114804 ALD114835 ALD114835PCL ALD114835SCL ALD114935
    Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD114835/ALD114935 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® VGS th = -3.50V MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114835/ALD114935 are monolithic quad/dual depletion mode N-Channel


    Original     		ALD114835/ALD114935 ALD114835/ALD114935 ultra low igss pA ALD110800 depletion MOSFET Depletion-Mode MOSFET N-Channel Depletion-Mode MOSFET ALD114804 ALD114835 ALD114835PCL ALD114835SCL ALD114935 PDF

    LN1E

    Abstract: Marking code mps
    Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


    Original     		LND150 DSFP-LND150 A0912908 LN1E Marking code mps PDF

    Depletion MOSFET

    Abstract: switching transistor 331 b771D n channel depletion MOSFET N-Channel Depletion-Mode MOSFET BSD12 free transistor gbs transistor convertor 5 V to -5 V Depletion
    Text: 711Gä2t> Q0b770ö 217 • P H I N BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon M OS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		BSD12 Depletion MOSFET switching transistor 331 b771D n channel depletion MOSFET N-Channel Depletion-Mode MOSFET BSD12 free transistor gbs transistor convertor 5 V to -5 V Depletion PDF

    40822

    Abstract: No abstract text available
    Text: LND150 N-Channel Depletion-Mode DMOS FET General Description Features The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown Low power drive requirement


    Original     		LND150 LND150 DSFP-LND150 B021110 40822 PDF

    FET 4900

    Abstract: CP CLARE 4367 MOS FET SOT-223 MOS FET SOT-223 ON CPC5602C CPC5602CTR CPC5604A CPC5610A CPC5611A
    Text: CPC5602C N Channel Depletion Mode FET Description The CPC5602C is an “N” channel depletion mode Field Effect Transistor FET that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage


    Original     		CPC5602C CPC5602C OT-223 DS-CPC5602C-Rev. FET 4900 CP CLARE 4367 MOS FET SOT-223 MOS FET SOT-223 ON CPC5602CTR CPC5604A CPC5610A CPC5611A PDF

    sot transistor pinout

    Abstract: n channel depletion MOSFET 351 SOT223 CPC5602C
    Text: CPC5602C N Channel Depletion Mode FET Description The CPC5602C is an “N” channel depletion mode Field Effect Transistor FET that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage


    Original     		CPC5602C OT-223 CPC5602C DS-CPC5602C-R1 sot transistor pinout n channel depletion MOSFET 351 SOT223 PDF

    FET SOT-89 N-Channel

    Abstract: CPC3710C ignition module sot89 fet
    Text: CPC3710C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 250V RDS ON (max) 10Ω IDSS (min) Package 220mA SOT-89 Description The CPC3710C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third


    Original     		CPC3710C 220mA OT-89 CPC3710C DS-CPC3710C-R00A FET SOT-89 N-Channel ignition module sot89 fet PDF

    RY115

    Abstract: CPC3714C R00a D 4242 transistor
    Text: CPC3714C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 350V RDS ON (max) 14Ω IDSS (min) Package 240mA SOT-89 Description The CPC3714C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third


    Original     		CPC3714C 240mA OT-89 CPC3714C DS-CPC3714C-R00A RY115 R00a D 4242 transistor PDF

    FET marking code ndew

    Abstract: No abstract text available
    Text: LND250 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND250 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


    Original     		LND250 DSFP-LND250 A091208 FET marking code ndew PDF

    transistor marking code 12W SOT-23

    Abstract: 12w SOT 23 package marking code marking 12W SOT23 LND150 12w marking code of transistor sot 23 12w sot-23 sot-23 12w 12W MARKING sot23 LN1E Nd150
    Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


    Original     		LND150 LND150 DSFP-LND150 A030609 transistor marking code 12W SOT-23 12w SOT 23 package marking code marking 12W SOT23 12w marking code of transistor sot 23 12w sot-23 sot-23 12w 12W MARKING sot23 LN1E Nd150 PDF

    transistor marking code 12W SOT-23

    Abstract: 12w marking code sot 23 12w SOT 23 package marking code marking 12W SOT23 12W MARKING sot23 fet sot-89 marking code SOT MARKING 213 LN1E 12w marking code of transistor sot 23 Marking code 12w SOT-23
    Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


    Original     		LND150 DSFP-LND150 A012809 transistor marking code 12W SOT-23 12w marking code sot 23 12w SOT 23 package marking code marking 12W SOT23 12W MARKING sot23 fet sot-89 marking code SOT MARKING 213 LN1E 12w marking code of transistor sot 23 Marking code 12w SOT-23 PDF

    LN1E

    Abstract: No abstract text available
    Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


    Original     		LND150 DSFP-LND150 A10310808 LN1E PDF

    nchannel

    Abstract: DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 n-channel
    Text: Chapter 8 – Depletion Mode MOSFETs DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 N-Channel; 300V; 12Ω N-Channel; 350V; 25Ω N-Channel; 400V; 25Ω N-Channel; 240V; 4Ω N-Channel; 400V; 6.0Ω N-Channel; 500V; 1.0KΩ N-Channel; 500V; 1.0KΩ


    Original     		DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 nchannel DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 n-channel PDF

    Untitled

    Abstract: No abstract text available
    Text: bbS3=i31 002544=1 =105 * A P X BSD22 b7E D N AMER PHI LIP S/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		BSD22 OT-143 PDF