Untitled
Abstract: No abstract text available
Text: Module no:3024083 LabelId:3024083 Operator:Phoenix 18:58:02, Donnerstag, 28. Juni 2001 ZFKKB 4 Terminal width 6.2 IEC rigid solid 2 [mm ] flexible stranded AWG I U [A] [V] IEC 947-7-1 0.5-6 0.5-4 20-10 32 500 EN 50 019 * 0.5-4 0.5-4 – 27 500 * Certification: KEMA Ex-96.D.4367U
|
Original
|
Ex-96
4367U
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 12.9 kV SiC PiN diodes with low on-state drops and high carrier lifetimes Siddarth Sundaresana, Charles Sturdevant, Madhuri Marripelly, Eric Lieser and Ranbir Singh GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a siddarth.sundaresan@genesicsemi.com, *corresponding author
|
Original
|
DEAR0000112)
|
PDF
|
HL941
Abstract: LC73860 3001C ILC02659 ILC02660 ILC02661 ILC02662 dtmf 4.194304-mhz
Text: 注文コード No. N 4 3 6 7 A LC73860 No. N 4 3 6 7 A 32002 開発ニューズ No.1542 半導体ニューズ NO.4367 とさしかえてください。 とさしかえてください。 LC73860 CMOS LSI DTMF レシーバ LSI LC73860 はDTMF 信号の検出を行うレシーバであり、それに必要なフィルタを内蔵した留守番電話機用 LSI で
|
Original
|
LC73860
LC73860
300mil)
3001C
51min
D2192
A8-9771
HL941
3001C
ILC02659
ILC02660
ILC02661
ILC02662
dtmf
4.194304-mhz
|
PDF
|
1N8024-GA SPICE
Abstract: No abstract text available
Text: 1N8024-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8024-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155
|
Original
|
1N8024-GA
1N8024-GA.
05-SEP-2013
1N8024-GA
1N8024
TEMP-24)
88E-18
1N8024-GA SPICE
|
PDF
|
1N8031-GA SPICE
Abstract: PIN diode SPICE model
Text: 1N8031-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8031-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155
|
Original
|
1N8031-GA
1N8031-GA.
05-SEP-2013
1N8031-GA
1N8031
57E-18
1N8031-GA SPICE
PIN diode SPICE model
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Rapidly Maturing SiC Junction Transistors Featuring Current Gain β > 130, Blocking Voltages Up To 2700 V and Stable Long-Term Operation S.G. Sundaresan, S. Jeliazkov, B. Grummel, R. Singh GeneSiC Semiconductor, Inc. 43670 Trade Center Pl, Suite 155, Dulles, VA 20166, USA
|
Original
|
|
PDF
|
1N8034-GA SPICE
Abstract: No abstract text available
Text: 1N8034-GA SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the 1N8034-GA device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155
|
Original
|
1N8034-GA
1N8034-GA
05-SEP-2013
1N8034
46E-17
00E-05
26E-09
1N8034-GA SPICE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1200 V-class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-fast Switching capability Ranbir Singha,*, Stoyan Jeliazkov and Eric Lieser GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a ranbir.singh@genesicsemi.com, *corresponding author
|
Original
|
N00014-C-10-0104,
|
PDF
|
led rgb amplifier
Abstract: abstract led digital display board Luminus Driver max16821 LED led rgb amplifier circuit pwm rgb led driver Luminus pwm luminus datasheet APP4367 MAX16821
Text: Maxim > App Notes > Display drivers Power-supply circuits Keywords: HB, high brightness, LED, HB LED, RGB, projection, projector, high current, luminus, PhlatLight Dec 06, 2010 APPLICATION NOTE 4367 Adding three power MOSFETs lets a single step-down converter drive
|
Original
|
MAX16821
com/an4367
AN4367,
APP4367,
Appnote4367,
led rgb amplifier
abstract led digital display board
Luminus Driver
max16821 LED
led rgb amplifier circuit
pwm rgb led driver
Luminus pwm
luminus datasheet
APP4367
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LJT — accessories strain relief solder type L BB GG Y B * 10-436792-XXX For military type cable clamp see MS27506 or M85049/49 on page 28. * To complete order number, add shell size and suffix number. 10-Number Suffix Finish Chromate treat -XX0 Anodic coating
|
Original
|
10-436792-XXX
MS27506
M85049/49
10-Number
|
PDF
|
MSK4367H
Abstract: No abstract text available
Text: MIL-PRF-38534 CERTIFIED FACILITY M.S.KENNEDY CORP. 10 AMP, 38V, 3 PHASE MOSFET DC BRUSHLESS DIGITAL MOTOR CONTROLLER 4367 315 701-6751 4707 Dey Road Liverpool, N.Y. 13088 FEATURES: 38 Volt Maximum Operating Supply Voltage 55 Volt Absolute Maximum Output Switch Capability
|
Original
|
MIL-PRF-38534
MIL-PRF-38
MSK4367
MSK4367H
|
PDF
|
PC BASED DC MOTOR SPEED CONTROLLER
Abstract: No abstract text available
Text: MIL-PRF-38534 CERTIFIED FACILITY M.S.KENNEDY CORP. 10 AMP, 38V, 3 PHASE MOSFET DC BRUSHLESS DIGITAL MOTOR CONTROLLER 4367 315 701-6751 4707 Dey Road Liverpool, N.Y. 13088 FEATURES: 38 Volt Maximum Operating Supply Voltage 55 Volt Absolute Maximum Output Switch Capability
|
Original
|
MIL-PRF-38534
MIL-PRF-38
MSK4367
MSK4367H
PC BASED DC MOTOR SPEED CONTROLLER
|
PDF
|
1N8026-GA SPICE
Abstract: No abstract text available
Text: 1N8026-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8026-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155
|
Original
|
1N8026-GA
1N8026-GA.
05-SEP-2013
1N8026-GA
1N8026
TEMP-24)
45E-15
1N8026-GA SPICE
|
PDF
|
anode gate thyristor
Abstract: No abstract text available
Text: Integrated SiC Anode Switched Thyristor Modules for Smart-Grid Applications Siddarth G. Sundaresana*, Eric Lieser and Ranbir Singh GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a siddarth.sundaresan@genesicsemi.com, *corresponding author
|
Original
|
5x1014
1x107
DEAR0000112)
anode gate thyristor
|
PDF
|
|
|
GA01PNS100-CAL SPICE
Abstract: No abstract text available
Text: GA01PNS100-CAL SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the GA01PNS100-CAL device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155
|
Original
|
GA01PNS100-CAL
05-SEP-2013
GA01PNS100-CAL
GA01PNS100
00E-25
28E-11
00E-03
GA01PNS100-CAL SPICE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LJT — accessories strain relief solder type * 10-436792-XXX For military type cable clamp see MS27506 or M85049/49. on page 28. *To complete order number, add shell size and suffix number. 10-Number Suffix Finish Chromate treat -XX0 Anodic coating -XX5
|
Original
|
10-436792-XXX
MS27506
M85049/49.
10-Number
M85049
|
PDF
|
GA01PNS100-CAU SPICE
Abstract: No abstract text available
Text: GA01PNS100-CAU SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the GA01PNS100-CAU device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155
|
Original
|
GA01PNS100-CAU
05-SEP-2013
GA01PNS100-CAL
GA01PNS100
00E-25
28E-11
00E-03
GA01PNS100-CAU
GA01PNS100-CAU SPICE
|
PDF
|
1N8035-GA SPICE
Abstract: No abstract text available
Text: 1N8035-GA SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the 1N8035-GA device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155
|
Original
|
1N8035-GA
1N8035-GA
05-SEP-2013
1N8035
46E-17
00E-05
26E-09
1N8035-GA SPICE
|
PDF
|
1N8030-GA SPICE
Abstract: No abstract text available
Text: 1N8030-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8030-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155
|
Original
|
1N8030-GA
1N8030-GA.
05-SEP-2013
1N8030-GA
1N8030
57E-18
1N8030-GA SPICE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Silicon Carbide Junction Transistors and Schottky Rectifiers optimized for 250°C operation Siddarth Sundaresan, Brian Grummel and Ranbir Singh GeneSiC Semiconductor, 43670 Trade Center Place, Suite 155, Dulles VA 20166, U.S.A. ABSTRACT Electrical performance and reliability of SiC Junction Transistors SJTs and Schottky
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY M.S.KENNEDY CORP. 10 AMP, 38V, 3 PHASE MOSFET DC BRUSHLESS DIGITAL MOTOR CONTROLLER 4367 315 701-6751 4707 Dey Road Liverpool, N.Y. 13088 FEATURES: 38 Volt Maximum Operating Supply Voltage 55 Volt Absolute Maximum Output Switch Capability
|
Original
|
MIL-PRF-38534
MSK4367
MSK4367H
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1200 V SiC Schottky Rectifiers optimized for ≥ 250 °C operation with low junction capacitance Ranbir Singh* and Siddarth Sundaresan GeneSiC Semiconductor Inc. 43670 Trade Center Place; Suite 155 Dulles, VA. USA *Ranbir@ieee.org Abstract— Electrical Characteristics of Industry’s first
|
Original
|
|
PDF
|
4367
Abstract: LC73860 EN4367
Text: Ordering num ber: EN 4367 CMOS LSI LC73860 No. 4367 SA\YO DTMF Receiver 1C i OVERVIEW PIN ASSIGNMENT The LC73860 is a DTMF signal detector receiver that incorporates all the necessary filters for telephone answering machines. FEATURES • 16-DTMF tone signal decoder
|
OCR Scan
|
EN4367
LC73860
LC73860
16-DTMF
3001B-DIP8
4367
EN4367
|
PDF
|
RT1N241M
Abstract: 2sc3246 2SC4159 4392 DTC143ES 2SC3296 2sc3374 DTC114EU 2sc4368 DTC144EU
Text: - m £ T y p e No. tt « Manuf. SANYO 2SC 4357 h m ¿ÚUi0¿0 2SC 4359 T 2SC3458 2SC 4351 = m 2SC 4362 = # Hi ^ TOSHIBA B V NEC HITACHI tL £ 2SC 4366 S 4 2SC3661 2SC 4367 a s 2SC3776 2SC 4368 tö T MA T S U S H I T A h m MITSUBISHI □ — A ROHM U N221F
|
OCR Scan
|
2SD1623
2SC2873
2SC3458
N221F
RT1N432C
DTC143XK
UN4216
RT1N432S
DTC143XS
RN1401
RT1N241M
2sc3246
2SC4159
4392
DTC143ES
2SC3296
2sc3374
DTC114EU
2sc4368
DTC144EU
|
PDF
|
