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    N-CHANNEL DEPLETION MODE FET Search Results

    N-CHANNEL DEPLETION MODE FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    TLP293-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP292-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL DEPLETION MODE FET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    40822

    Abstract: No abstract text available
    Text: LND150 N-Channel Depletion-Mode DMOS FET General Description Features The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown Low power drive requirement


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    LND150 LND150 DSFP-LND150 B021110 40822 PDF

    LN1E

    Abstract: Marking code mps
    Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


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    LND150 DSFP-LND150 A0912908 LN1E Marking code mps PDF

    FET 4900

    Abstract: CP CLARE 4367 MOS FET SOT-223 MOS FET SOT-223 ON CPC5602C CPC5602CTR CPC5604A CPC5610A CPC5611A
    Text: CPC5602C N Channel Depletion Mode FET Description The CPC5602C is an “N” channel depletion mode Field Effect Transistor FET that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage


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    CPC5602C CPC5602C OT-223 DS-CPC5602C-Rev. FET 4900 CP CLARE 4367 MOS FET SOT-223 MOS FET SOT-223 ON CPC5602CTR CPC5604A CPC5610A CPC5611A PDF

    sot transistor pinout

    Abstract: n channel depletion MOSFET 351 SOT223 CPC5602C
    Text: CPC5602C N Channel Depletion Mode FET Description The CPC5602C is an “N” channel depletion mode Field Effect Transistor FET that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage


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    CPC5602C OT-223 CPC5602C DS-CPC5602C-R1 sot transistor pinout n channel depletion MOSFET 351 SOT223 PDF

    Untitled

    Abstract: No abstract text available
    Text: LND250 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND250 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


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    LND250 DSFP-LND250 A103108 PDF

    FET marking code ndew

    Abstract: No abstract text available
    Text: LND250 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND250 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


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    LND250 DSFP-LND250 A091208 FET marking code ndew PDF

    transistor marking code 12W SOT-23

    Abstract: 12w SOT 23 package marking code marking 12W SOT23 LND150 12w marking code of transistor sot 23 12w sot-23 sot-23 12w 12W MARKING sot23 LN1E Nd150
    Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


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    LND150 LND150 DSFP-LND150 A030609 transistor marking code 12W SOT-23 12w SOT 23 package marking code marking 12W SOT23 12w marking code of transistor sot 23 12w sot-23 sot-23 12w 12W MARKING sot23 LN1E Nd150 PDF

    FET SOT-89 N-Channel

    Abstract: CPC3710C ignition module sot89 fet
    Text: CPC3710C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 250V RDS ON (max) 10Ω IDSS (min) Package 220mA SOT-89 Description The CPC3710C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third


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    CPC3710C 220mA OT-89 CPC3710C DS-CPC3710C-R00A FET SOT-89 N-Channel ignition module sot89 fet PDF

    RY115

    Abstract: CPC3714C R00a D 4242 transistor
    Text: CPC3714C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 350V RDS ON (max) 14Ω IDSS (min) Package 240mA SOT-89 Description The CPC3714C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third


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    CPC3714C 240mA OT-89 CPC3714C DS-CPC3714C-R00A RY115 R00a D 4242 transistor PDF

    transistor marking code 12W SOT-23

    Abstract: 12w marking code sot 23 12w SOT 23 package marking code marking 12W SOT23 12W MARKING sot23 fet sot-89 marking code SOT MARKING 213 LN1E 12w marking code of transistor sot 23 Marking code 12w SOT-23
    Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


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    LND150 DSFP-LND150 A012809 transistor marking code 12W SOT-23 12w marking code sot 23 12w SOT 23 package marking code marking 12W SOT23 12W MARKING sot23 fet sot-89 marking code SOT MARKING 213 LN1E 12w marking code of transistor sot 23 Marking code 12w SOT-23 PDF

    LN1E

    Abstract: No abstract text available
    Text: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown


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    LND150 DSFP-LND150 A10310808 LN1E PDF

    FET SOT-89 N-Channel

    Abstract: D 4242 transistor CPC3720C FET SOT-89
    Text: CPC3720C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 350V RDS ON (max) 22Ω IDSS (min) Package 130mA SOT-89 Description The CPC3720C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third


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    CPC3720C 130mA OT-89 CPC3720C DS-CPC3720C-R00A FET SOT-89 N-Channel D 4242 transistor FET SOT-89 PDF

    depletion mode fet

    Abstract: CPC3730C MOSFET 350V SOT-89
    Text: CPC3730C N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ BVDGX 350V RDS ON (max) 30Ω IDSS (min) Package 140mA SOT-89 Description The CPC3730C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third


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    CPC3730C 140mA OT-89 CPC3730C DS-CPC3730C-R00B depletion mode fet MOSFET 350V SOT-89 PDF

    Untitled

    Abstract: No abstract text available
    Text: DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The DN2530 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.


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    DN2530 DN2530 DSFP-DN2530 A103108 PDF

    mos fet marking k4

    Abstract: DN3765 DN3765K4-G 2L43 transistor MARKING K4
    Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


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    DN3765 O-252, DSFP-DN3765 NR101207 mos fet marking k4 DN3765 DN3765K4-G 2L43 transistor MARKING K4 PDF

    DN5SW

    Abstract: DN3535N8-G dn5s 125OC DN3535 marking code sot-89 AA
    Text: DN3535 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► This low threshold depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


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    DN3535 DSFP-DN3535 A103108 DN5SW DN3535N8-G dn5s 125OC DN3535 marking code sot-89 AA PDF

    DN5MW

    Abstract: DN3545 DN3545N3-G DN3545N8-G
    Text: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


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    DN3545 DSFP-DN3545 B051909 DN5MW DN3545 DN3545N3-G DN3545N8-G PDF

    mos fet marking k4

    Abstract: dn37 DN3765 DN3765K4-G
    Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


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    DN3765 DSFP-DN3765 A103108 mos fet marking k4 dn37 DN3765 DN3765K4-G PDF

    DN2624

    Abstract: DN2624N3
    Text: DN2624 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) 240V 4.0Ω 600mA Order Number / Package TO-92 DN2624N3 Advanced DMOS Technology Features These low threshold depletion-mode (normally-on) transistors


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    DN2624 600mA DN2624N3 DN2624 DN2624N3 PDF

    e041

    Abstract: No abstract text available
    Text: Supertex inc. DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The Supertex DN2540 is a low threshold depletion mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate


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    DN2540 DN2540 DSFP-DN2540 B041310 e041 PDF

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Depletion-Mode 4-Channel DMOS FETArmy calocflc o CORPORATION SD5501 FEATURES DESCRIPTION • • • • The SD5501 is manufactured utilizing Calogic’s proprietary high speed, low capacitance DMOS process featuring an N-Channel depletion-mode design.


    OCR Scan
    SD5501 SD5501 16-pin SD5501N XSD5501 PDF

    1D47

    Abstract: SD5501 SD5501N XSD5501 13G46
    Text: N-Channel Depletion-Mode 4-Channel DMOS FET Array C U lO Q I C RPORATION SD5501 FEATURES DESCRIPTION • • • • The SD5501 is manufactured utilizing Calogic’s proprietary high speed, low capacitance DMOS process featuring an N-Channel depletion-mode design.


    OCR Scan
    SD5501 SD5501 16-pin 443S2 1D47 SD5501N XSD5501 13G46 PDF

    Untitled

    Abstract: No abstract text available
    Text: « m Ia W î# C U lO Q IC N-Channel Depletion-Mode 4-Channel DMOS FETArray RPORATION SD5501 FEATURES DESCRIPTION • • • • The SD5501 is manufactured utilizing Calogic’s proprietary high speed, low capacitance DMOS process featuring an N-Channel depletion-mode design.


    OCR Scan
    SD5501 SD5501 16-pin G0G1D47 PDF

    ultra FAST DMOS FET Switches

    Abstract: SD2100 depletion fet depletion mode fet SST2100 XSD2100 FAST DMOS FET Switches
    Text: N-Channel Depletion Mode Lateral DMOS FET CCIIOQIC CORPORATION \J SD2100/SST2100 FEATURES DESCRIPTION • Fast S w itching. toN 1.0ns ! . crss2 p f The SD2100/SST2100 is a depletion mode DMOS lateral FET


    OCR Scan
    SD2100/SST2100 SD2100/SST2100 OT-143. SD2100 SST2100 OT-143 XSD2100 10OfiA 1A44322 000102b ultra FAST DMOS FET Switches depletion fet depletion mode fet FAST DMOS FET Switches PDF