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    N-CHANNEL 500V MOSFET Search Results

    N-CHANNEL 500V MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL 500V MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    nchannel

    Abstract: DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 n-channel
    Text: Chapter 8 – Depletion Mode MOSFETs DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 N-Channel; 300V; 12Ω N-Channel; 350V; 25Ω N-Channel; 400V; 25Ω N-Channel; 240V; 4Ω N-Channel; 400V; 6.0Ω N-Channel; 500V; 1.0KΩ N-Channel; 500V; 1.0KΩ


    Original     		DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 nchannel DN2530 DN2535 DN2540 DN2624 DN2640 LND150 LND250 n-channel PDF

    FDPF18N50T

    Abstract: No abstract text available
    Text: UniFETTM FDP18N50 / FDPF18N50T 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDP18N50 FDPF18N50T FDPF18N50T PDF

    STP8NM50FP

    Abstract: STP8NM50
    Text: STP8NM50 STP8NM50FP N-CHANNEL 500V - 0.7Ω - 8A TO-220/TO-220FP MDmesh Power MOSFET TYPE STP8NM50 STP8NM50FP n n n n n VDSS RDS on ID 500V 500V < 0.8Ω < 0.8Ω 8A 8A TYPICAL RDS(on) = 0.7Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED


    Original     		STP8NM50 STP8NM50FP O-220/TO-220FP STP8NM50FP STP8NM50 PDF

    FDPF7N50U

    Abstract: No abstract text available
    Text: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDP7N50U/FDPF7N50U FDP7N50U/FDPF7N50U FDPF7N50U PDF

    Untitled

    Abstract: No abstract text available
    Text: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • 5A, 500V, RDS on = 1.5 @VGS = 10 V


    Original     		FDP7N50U/FDPF7N50U PDF

    mosfet 20A 500V

    Abstract: FDP20N50 "Power Diode" 500V 20A FDPF20N50
    Text: TM UniFET FDP20N50 / FDPF20N50 500V N-Channel MOSFET Features Description • 20A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDP20N50 FDPF20N50 FDPF20N50 mosfet 20A 500V "Power Diode" 500V 20A PDF

    FDPF16N50

    Abstract: FDP16N50
    Text: TM UniFET FDP16N50 / FDPF16N50 500V N-Channel MOSFET Features Description • 16A, 500V, RDS on = 0.38Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDP16N50 FDPF16N50 FDPF16N50 PDF

    fdp18n50

    Abstract: FDPF18N50
    Text: UniFET TM FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDP18N50 FDPF18N50 FDPF18N50 PDF

    F133

    Abstract: FDA50N50 FDH50N50 48A110
    Text: UniFET FDH50N50_F133 / FDA50N50 TM 500V N-Channel MOSFET Features Description • 48A, 500V, RDS on = 0.105Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDH50N50 FDA50N50 FDA50N50 F133 48A110 PDF

    transistor fda20n50

    Abstract: F109 FDA20N50
    Text: TM UniFET FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET Features Description • 22A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDA20N50 transistor fda20n50 F109 PDF

    F133

    Abstract: FDA50N50 FDH50N50
    Text: UniFET FDH50N50_F133 / FDA50N50 TM 500V N-Channel MOSFET Features Description • 48A, 500V, RDS on = 0.105Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDH50N50 FDA50N50 FDA50N50 F133 PDF

    FDP18N50

    Abstract: FDPF18N50T FDPF18N50
    Text: UniFETTM FDP18N50 / FDPF18N50 / FDPF18N50T 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDP18N50 FDPF18N50 FDPF18N50T FDPF18N50T PDF

    FDPF16N50

    Abstract: MOSFET 400V 16A 100V single n-channel N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V p channel mosfet 100v FDP16N50
    Text: TM UniFET FDP16N50 / FDPF16N50 500V N-Channel MOSFET Features Description • 16A, 500V, RDS on = 0.38Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDP16N50 FDPF16N50 FDPF16N50 MOSFET 400V 16A 100V single n-channel N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V p channel mosfet 100v PDF

    FDH45N50F

    Abstract: No abstract text available
    Text: UniFET TM FDH45N50F 500V N-Channel MOSFET, FRFET Features Description • 45A, 500V, RDS on = 0.12Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDH45N50F O-247This FDH45N50F PDF

    18N50T

    Abstract: fdpf18n50t
    Text: UniFET TM FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDP18N50 FDPF18N50 FDPF18N50 FDPF18N50T 18N50T PDF

    F109

    Abstract: FDA16N50
    Text: TM UniFET FDA16N50 / FDA16N50_F109 500V N-Channel MOSFET Features Description • 16.5A, 500V, RDS on = 0.38Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDA16N50 F109 PDF

    FQPF*11n50cf

    Abstract: FQPF11N50 fqpf11n50cf FQP11N50CF
    Text: FRFET TM FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features Description • 11A, 500V, RDS on = 0.55Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQP11N50CF/FQPF11N50CF FQP11N50CF/FQPF11N50CF FQPF*11n50cf FQPF11N50 fqpf11n50cf FQP11N50CF PDF

    FDH45N50F

    Abstract: No abstract text available
    Text: UniFET TM FDH45N50F 500V N-Channel MOSFET, FRFET Features Description • 45A, 500V, RDS on = 0.12Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDH45N50F O-247 FDH45N50F PDF

    Untitled

    Abstract: No abstract text available
    Text: FRFET TM FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Features Description • 13A, 500V, RDS on = 0.54Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQP13N50CF FQPF13N50CF FQPF13N50CF PDF

    TO-3PN

    Abstract: No abstract text available
    Text: UniFET FDH50N50_F133 / FDA50N50 TM 500V N-Channel MOSFET Features Description • 48A, 500V, RDS on = 0.105Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDH50N50 FDA50N50 FDA50N50 TO-3PN PDF

    FDPF18N50T

    Abstract: FDP18N50
    Text: UniFETTM FDP18N50 / FDPF18N50 / FDPF18N50T 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDP18N50 FDPF18N50 FDPF18N50T FDPF18N50T PDF

    FQPF10N50CF

    Abstract: FQPF Series mosfet 500v 10A mosfet 10a 500v FQP10N50CF
    Text: TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQP10N50CF FQPF10N50CF FQPF10N50CF FQPF Series mosfet 500v 10A mosfet 10a 500v PDF

    FDPF

    Abstract: FDP18N50 FDPF18N50 MOSFET 500V 18A
    Text: TM UniFET FDP18N50 / FDPF18N50 500V N-Channel MOSFET Features Description • 18A, 500V, RDS on = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDP18N50 FDPF18N50 FDPF18N50 FDPF MOSFET 500V 18A PDF

    FDPF7N50U

    Abstract: FDP7N50U
    Text: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDP7N50U/FDPF7N50U FDPF7N50U FDP7N50U PDF