Untitled
Abstract: No abstract text available
Text: ADVANCE M IC R O N • MT42C8255 FICMNOlOC» MC 2 MEG VRAM 256K X 8 DRAM WITH 512x8 SAM FEATURES • • • • • • • • • • • Industry standard pinout, timing, and functions High-performance, CMOS silicon-gate process Single +5V ±10% power supply
|
OCR Scan
|
PDF
|
MT42C8255
512x8
512-cycle
300mW
40-Pin
|
sem 2107
Abstract: RT/IC sem 2107
Text: MT42C8255 256K X 8 VRAM |U |IC=RO N VRAM 256K X 8 DRAM WITH 512 X 8 SAM • • • • • • • • • • • Industry-standard pinout, tim ing and functions High-perform ance, CM OS silicon-gate process Single +5V ±10% power supply Inputs and outputs are fully TTL compatible
|
OCR Scan
|
PDF
|
MT42C8255
512-cycle
300mW
40-Pin
40/44-Pin
MT42C6255
sem 2107
RT/IC sem 2107
|
Untitled
Abstract: No abstract text available
Text: MI CR ON TECHNOLOGY SSE INC D b lllS 4 * ì DDDSPtiB l b 2 • MRN PRELIMINARY MT42C8255 256K X 8 VRAM M IC R O N I TECHNOJ OCY. INC. ■ t'O VRAM 256K X 8 DRAM WITH 512x8 SAM FEATURES • • • • • • • • • • • Industry standard pinout, timing, and functions
|
OCR Scan
|
PDF
|
MT42C8255
512-cycle
300mW
512x8
40-Pin
MT42C8255
WT42C8255
|
Untitled
Abstract: No abstract text available
Text: MT42C8254 256K X 8 VRAM [W IIC R Q N 256K X 8 DRAM WITH 512x8 SAM VRAM • Industry-standard pinout, tim ing and functions • NIBBLE 4-bit W RITE and M ASKED W RITE access cycles • High-perform ance, CM OS silicon-gate process • Single +5V ±10% power supply
|
OCR Scan
|
PDF
|
MT42C8254
512-cycle
512x8
40-Pin
|
MT42C8254
Abstract: No abstract text available
Text: MT42C8254 256K X 8 VRAM M IC R O N VRAM 256K X 8 DRAM WITH 512x8 SAM FEATURES • Industry-standard pinout, tim ing and functions • NIBBLE 4-bit W RITE and M ASKED W RITE access cycles • High-perform ance, CM O S silicon-gate process • Single +5V ±10% pow er supply
|
OCR Scan
|
PDF
|
MT42C8254
512-cycle
512x8
40-Pin
|
Micron MT42C
Abstract: No abstract text available
Text: PRELIMINARY M T42C8255 256KX 8 VRAM MICRON I n'—r ^*rr'y VRAM 256K x 8 DRAM WITH 512x8 SAM FEATURES • • • 40-Pin SOJ Q-6 Vec C 1 SC [ 2 SO I [ 3 S02 ( 4 SOS [ 5 S0 4 [ 6 TRiOE [ 7 • NONPERSISTENT M ASKED WRITE • BLOCK WRITE • SPLIT READ TRANSFER
|
OCR Scan
|
PDF
|
512-cycle
300mW
512x8
40-Pin
MT42C8255
MT42CW55
Micron MT42C
|
marking code AANG
Abstract: NT77 MT4C4256 2S650
Text: ADVANCE MT42C8255 TICittiOLOC' MC 2 MEG VRAM 256K x 8 DRAM WITH 5 1 2 x 8 SAM FEATURES • • • • • • • • • • • Industry standard pinout, timing, and functions High-performance, CMOS silicon-gate process Single +5V ±10% power supply Inputs and outputs are fully TTL compatible
|
OCR Scan
|
PDF
|
MT42C8255
512-cycle
512x8
300mW
WT42CI2S6
2S650
marking code AANG
NT77
MT4C4256
2S650
|
micron DRAM
Abstract: No abstract text available
Text: PRELIMINARY MT42C8255 256K X 8 VRAM MICRON 256K x 8 DRAM WITH 512 x 8 SAM VRAM FEATURES • • • • • • PIN ASSIGNMENT Top View Industry standard pinout, timing, and functions High-performance, CMOS silicon-gate process Single +5V ±10% power supply
|
OCR Scan
|
PDF
|
MT42C8255
512-cycle
300mW
40-Pin
micron DRAM
|
weitek power 9000
Abstract: W5186 weitek weitek bitblt ai-230 vesa local bus vesa local bus design weitek 9000 DRAM 64kx16
Text: POWER 9000 USER INTERFACE CONTROLLER October 1992 Chapter 1. Features 2-D G RA PH ICS A C C E LE R A T O R Supports polylines and mesh polygons for faster drawing Single-chip controller Supports pick mode Accelerates M icrosoft Windows and AutoCAD Supports resolutions up to 1600x1200x8, 1280x1024x8,
|
OCR Scan
|
PDF
|
1600x1200x8,
1280x1024x8,
1024x768x16,
800x600x24
32-bit
1600x1200,
1280x1024,
1024x768,
800x600,
640x480
weitek power 9000
W5186
weitek
weitek bitblt
ai-230
vesa local bus
vesa local bus design
weitek 9000
DRAM 64kx16
|
Untitled
Abstract: No abstract text available
Text: POWER 9100 GRAPHICS CONTROLLER August 22, 1994 Chapter 1. Technical Overview Single-Chip 2-D Graphics Accelerator Powerful Graphics Features O Ultra-high-speed local-bus display controller uses w orkstation display technology to give m aximum acceleration w ith graphical user interfaces such as
|
OCR Scan
|
PDF
|
208-pin
P9100-050-PFP
|
Untitled
Abstract: No abstract text available
Text: ADVANCE MT4V25632 256K x 32 VRAM MODULE |U|ICRON VRAM MODULE 256K x 32 DRAM WITH 512 x 32 SAM PIN ASSIGNMENT Top View 104-Pin SIMM • Proposed industry-standard pinout in a 104-pin single in-line package • High-perform ance, CM O S silicon-gate process
|
OCR Scan
|
PDF
|
MT4V25632
104-Pin
512-cycle
|
N MT42C8255
Abstract: micron DRAM
Text: M T42C8255 256K X 8 VR AM UIICRON VRAM 256K x 8 DRAM WITH 512 x 8 SAM • • • • • • • • • • • PIN ASSIGNMENT (Top View Industry-standard pinout, tim ing and functions High-perform ance, CM O S silicon-gate process Single +5V ±10% power supply
|
OCR Scan
|
PDF
|
T42C8255
512-cycle
300mW
40-Pin
MT42C8255
N MT42C8255
micron DRAM
|
uPD23C4000
Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A
|
OCR Scan
|
PDF
|
64Kx4
KM424C64
MT42C4064
uPD41264
uPD42264
HM53461
TMS4461
64Kx8
256KX4
KM428C64
uPD23C4000
93c46 atmel
sony Cross Reference
atmel 93c66
HN62404P
93C46L
rom at29c010
Hitachi SRAM cross reference
x2864a
UPD23C2000
|
TC55B4257
Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264
|
OCR Scan
|
PDF
|
KM424C64
MT42C4064
uPD41264
uPD42264
HM53461
TMS4461
KM428C64
KM424C256
KM424C256A
TC524256
TC55B4257
93C46L
UPD23C4000
atmel 93c66
KM628512
Hitachi SRAM cross reference
atmel 93c57
TC55B465
upd23c8000
93c56v
|