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    N MOSFET 50V 400A Search Results

    N MOSFET 50V 400A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N MOSFET 50V 400A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SF100CB100

    Abstract: No abstract text available
    Text: MOSFET MODULE SF100CB100 UL;E76102 （M） SF100CB100 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current with a fast recovery diode（trr≦300ns）reverse connected. The mounting base of the module is electrically isolated from semiconductor elements for


    Original     		PDF SF100CB100 E76102 SF100CB100 diodetrr300nsreverse VDSS1000V trr300ns 108max ID100A, 63max 50msec10sec

    SF100CB100

    Abstract: fast recovery diode trr Pt mosfet 4805
    Text: MOSFET MODULE SF100CB100 UL;E76102 （M） SF100CB100 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current with a fast recovery diode（trr≦300ns）reverse connected. The mounting base of the module is electrically isolated from semiconductor elements for


    Original     		PDF SF100CB100 E76102 SF100CB100 diodetrr300nsreverse VDSS1000V trr300ns 108max ID100A, 63max 50msec10sec fast recovery diode trr Pt mosfet 4805

    Untitled

    Abstract: No abstract text available
    Text: PD - 91778A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-204AA/AE IRH7250SE 200V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRH7250SE Radiation Level RDS(on) 100K Rads (Si) 0.10Ω ID 26A International Rectifier’s RADHardTM HEXFET® MOSFET


    Original     		PDF 1778A O-204AA/AE) IRH7250SE MIL-STD-750, 160volt MlL-STD-750, O-204AE

    IRHF7430SE

    Abstract: JANSR2N7464T2 400V to 12V DC Regulator 500V 25A Mosfet
    Text: PD - 91863C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF7430SE JANSR2N7464T2 500V, N-CHANNEL REF: MIL-PRF-19500/675 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHF7430SE Radiation Level RDS(on) 100K Rads (Si) 1.77Ω ID QPL Part Number


    Original     		PDF 91863C IRHF7430SE JANSR2N7464T2 MIL-PRF-19500/675 MIL-STD-750, MlL-STD-750, O-205AF IRHF7430SE JANSR2N7464T2 400V to 12V DC Regulator 500V 25A Mosfet

    SFS9530

    Abstract: T0-220F
    Text: SFS9530 Advanced Power MOSFET FEATURES bvdss = -100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^DS on = 0.3Q lD = - 8 A ■ 175°C Operating Temperature ■ Extended Safe Operating Area


    OCR Scan     		PDF SFS9530 -100V T0-220F SFS9530 T0-220F

    SFS9630

    Abstract: mosfet v0 MC160 d859
    Text: SFS9630 A dvanced Power MOSFET FEATURES BVdss = -200 V • ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance ■ Improved Gate Charge ^DS on = 0.8 Q lD = -4.4 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 ^A (Max.) @ VOS= -200V


    OCR Scan     		PDF -200V SFS9630 -220F SFS9630 mosfet v0 MC160 d859

    a2724

    Abstract: No abstract text available
    Text: Advanced Power MOSFET S F W /I9 6 3 4 FEATURES B V dss = - 2 5 0 V • Avalanche Rugged Technology ^DS on = ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA (Max.) @ VOS = -250V


    OCR Scan     		PDF -250V 0Q4D11S SFW/I9634 GD4D117 a2724

    Untitled

    Abstract: No abstract text available
    Text: SFP9630 Advanced Power MOSFET FEATURES BVdss = -200 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 jiA Max. @ VDS= -200V


    OCR Scan     		PDF SFP9630 -200V O-220 003b32fl 7Tb4142 DD3b33D

    Untitled

    Abstract: No abstract text available
    Text: SFS9634 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ B V dss = -2 5 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 JA (Max. @ VDS= -250V


    OCR Scan     		PDF SFS9634 -250V T0-220F 004002D 7Tb414E G040021

    SFS9634

    Abstract: p-channel 250V power mosfet DIODE D3S 90 Power MOSFET P-Channel 250V 50A d3s diode
    Text: SFS9634 Advanced Power MOSFET FEATURES BVdss = -250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA Max. @ VDS= -250V


    OCR Scan     		PDF -250V SFS9634 SFS9634 p-channel 250V power mosfet DIODE D3S 90 Power MOSFET P-Channel 250V 50A d3s diode

    Untitled

    Abstract: No abstract text available
    Text: IRFS140A Advanced Power MOSFET FEATURES b vdss • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 1751C Operating Temperature Lower Leakage Current : 10 MA Max. @ VOS=100V


    OCR Scan     		PDF IRFS140A 1751C IEFS14

    SFR 136

    Abstract: diode SFR-136
    Text: SFR/U9230 Advanced Power MOSFET FEATURES BVdss = -200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = -5.4 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 fiA (Max.) @ VDS = -200V


    OCR Scan     		PDF SFR/U9230 -200V SFR 136 diode SFR-136

    Untitled

    Abstract: No abstract text available
    Text: IRL540 A d van ced Power MOSFET FEATURES B V DSS - 100 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 5 8 Î2 28 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 100V


    OCR Scan     		PDF IRL540 O-220

    SFP9634

    Abstract: No abstract text available
    Text: SFP9634 Advanced Power MOSFET FEATURES BVdss = -250 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 |iA Max. @ VOS = -250V


    OCR Scan     		PDF SFP9634 -250V O-220 003b32fl 7Tb4142 SFP9634

    IRL540A

    Abstract: No abstract text available
    Text: IRL540A A dvanced Power MOSFET FEATURES B V DSS — 100 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 5 8 Î2 28 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS= 1 0 0 V


    OCR Scan     		PDF IRL540A IRL540A

    IRL540A

    Abstract: No abstract text available
    Text: IRL540A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ H BVdss = 100 V Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 HA Max. @ VDS = 100V


    OCR Scan     		PDF IRL540A T0-220 003b32fl 3b32t O-220 00M1N IRL540A

    IRL540

    Abstract: No abstract text available
    Text: IRL540 A dvanced Power MOSFET FEATURES B V DSS — 100 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 5 8 Î2 28 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS= 1 0 0 V


    OCR Scan     		PDF IRL540 IRL540

    diode SFR-136

    Abstract: SFR 136 diode sfr 136
    Text: SFR/U9230 Advanced Power MOSFET FEATURES BVdss = -200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = -5.4 A ■ ■ ■ Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10nA(Max.) @ VDS = -200V


    OCR Scan     		PDF -200V SFR/U9230 diode SFR-136 SFR 136 diode sfr 136

    Untitled

    Abstract: No abstract text available
    Text: IRLW/I540A A d van ced Power MOSFET FEATURES B VDSS = 1 0 0 V ♦ Avalanche Rugged Technology ^D S o n - ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 0 .0 5 8 Î2 In = 2 8 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK


    OCR Scan     		PDF IRLW/I540A

    Untitled

    Abstract: No abstract text available
    Text: IRLW/I540A A d vanced Power MOSFET FEATURES BVDSS — 100 V ♦ Avalanche Rugged Technology 0.058Î2 ♦ Rugged Gate Oxide Technology ^ D S o n = ♦ Lower Input Capacitance lD = 28 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ 175°C Operating Temperature


    OCR Scan     		PDF IRLW/I540A

    U9130

    Abstract: diode 98A G39A
    Text: SFR/U9130 Advanced Power MOSFET FEATURES BVqss = "100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = 0 -3 ß ■ Lower Input Capacitance lD = -9.8 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA (Max.) @ VDS = -100V


    OCR Scan     		PDF SFR/U9130 -100V 7Tb4142 8Z694- U9130 diode 98A G39A

    Untitled

    Abstract: No abstract text available
    Text: IRLW/I540A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ b v dss = 100 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175°C Operating Temperature Lower Leakage Current : 10 HA Max. @ VDS= 100V


    OCR Scan     		PDF IRLW/I540A 0D3T32S b4142

    Untitled

    Abstract: No abstract text available
    Text: SFP9630 A d va n ce d Power MOSFET FEATURES BVdss = -200 V • ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : -10 nA Max. @ ■


    OCR Scan     		PDF -200V SFP9630

    Power MOSFET SFP9634

    Abstract: sfp9634 Power MOSFET P-Channel 250V 50A
    Text: SFP9634 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = -250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10|iA Max. @ VDS= -250V


    OCR Scan     		PDF -250V SFP9634 O-220 Power MOSFET SFP9634 sfp9634 Power MOSFET P-Channel 250V 50A