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    N MOSFET 400V 500A Search Results

    N MOSFET 400V 500A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    N MOSFET 400V 500A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    N mosfet 400v 100A

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD BYC10-600 Preliminary DIODE U LT RAFAST , LOW SWI T CH I N G LOSS RECT I FI ER DI ODE ̈ DESCRI PT I ON The UTC BYC10-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated


    Original     		PDF BYC10-600 BYC10-600 BYC10L-60at QW-R601-023 N mosfet 400v 100A

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD BYC8-600 Preliminary DIODE U LT RAFAST , LOW SWI T CH I N G LOSS RECT I FI ER DI ODE ̈ DESCRI PT I ON The UTC BYC8-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET.


    Original     		PDF BYC8-600 BYC8-600 QW-R601-025

    IRFIB8N50K

    Abstract: No abstract text available
    Text: PD - 94444A SMPS MOSFET IRFIB8N50K Applications l Switch Mode Power Supply SMPS l UninterruptIble Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) typ. ID 500V 290mΩ 6.7A Benefits l Low Gate Charge Qg results in Simple Drive Requirement


    Original     		PDF 4444A IRFIB8N50K O-220 I840G O-22O IRFIB8N50K

    Untitled

    Abstract: No abstract text available
    Text: PD - 94444A SMPS MOSFET IRFIB8N50K Applications l Switch Mode Power Supply SMPS l UninterruptIble Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) typ. ID 500V 290mΩ 6.7A Benefits l Low Gate Charge Qg results in Simple Drive Requirement


    Original     		PDF 4444A IRFIB8N50K O-220 08-Mar-07

    IRFIB8N50K

    Abstract: No abstract text available
    Text: PD - 94444A SMPS MOSFET IRFIB8N50K Applications l Switch Mode Power Supply SMPS l UninterruptIble Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) typ. ID 500V 290mΩ 6.7A Benefits l Low Gate Charge Qg results in Simple Drive Requirement


    Original     		PDF 4444A IRFIB8N50K O-220 12-Mar-07 IRFIB8N50K

    N mosfet 100v 500A

    Abstract: mosfet 600V 20A TK20A60U to220sis MOSFET 400V TO-220 N mosfet 400v 500A TK20A60UIAR Mosfet 600V, 20A TK12J60U TK12A60U
    Text: 08cj-H-01 600V系新構造 DTMOS シリーズ 600V Power MOSFETs with New Super Junction structure ◆ 近年家電製品の電源効率の向上や、セットの小型化が要求されており、これらの要求に対して スーパージャンクション構造を適用することで、シリコン固有の臨界電界で決定する理論限界を


    Original     		PDF 08cj-H-01 TK40J60T80mMax. TK20A60UQg 00V/20A TK20A60UIAR 00A/s O-220SIS TK12A60U TK12D60U O-220 N mosfet 100v 500A mosfet 600V 20A TK20A60U to220sis MOSFET 400V TO-220 N mosfet 400v 500A Mosfet 600V, 20A TK12J60U TK12A60U

    BYC20G

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD BYC20-600 Preliminary DIODE RECT I FI ER DI ODE, H Y PERFAST ̈ DESCRI PT I ON The UTC BYC20-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC20-600 is ideally used in half-bridge lighting


    Original     		PDF BYC20-600 BYC20-600 BYC20L-600-TA2-T BYC20at QW-R601-027 BYC20G

    SCS205KG

    Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ
    Text: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.


    Original     		PDF 000A-class) 56P6733E 1500SG SCS205KG SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD BYC5-600 Preliminary DIODE U LT RAFAST , LOW SWI T CH I N G LOSS RECT I FI ER DI ODE ̈ DESCRI PT I ON The UTC BYC5-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss. The UTC BYC5-600 is suitable for half-bridge lighting ballasts,


    Original     		PDF BYC5-600 BYC5-600 BYC5L-600-TA2-T BYC5G-600-TA2-T O-220-2 QW-R601-024

    transistor 415

    Abstract: diode 500A transistor working principle STTA806D AN-603 STTA2006P transistor 600v 500a transistor 2N2
    Text:  APPLICATION NOTE TURBOSWITCH TM IN A PFC BOOST CONVERTER B. Rivet 1.INTRODUCTION 2.PARAMETERS DEFINITION SGS-THOMSON offers two families of 600V ultrafast diodes TURBOSWITCH”A” and ”B” having different compromises between the forward c h a ra ct e ris t ic s a n d t h e re v e rs e re c ov ery


    Original     		PDF

    STTA806D

    Abstract: AN603 diode 400v 2A ultrafast TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE STTA2006P transistor Ip transistor working principle transistor 600v 500a 600V 20A 50KHz MOSFET
    Text: AN603 APPLICATION NOTE TURBOSWITCH IN A PFC BOOST CONVERTER INTRODUCTION STMicroelectronics offers two families of 600V ultrafast diodes TURBOSWITCH"A" and "B" having different compromises between the forward characteristics and the reverse recovery characteristics.


    Original     		PDF AN603 STTA806D AN603 diode 400v 2A ultrafast TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE STTA2006P transistor Ip transistor working principle transistor 600v 500a 600V 20A 50KHz MOSFET

    SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A

    Abstract: data sheet IC 7450 APT30GP60BSC T0-247 APT10SC60
    Text: TYPICAL PREFORMANCE CURVES APT30GP60BSC APT30GP60BSC 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


    Original     		PDF APT30GP60BSC O-247 SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A data sheet IC 7450 APT30GP60BSC T0-247 APT10SC60

    relay finder 45.61

    Abstract: reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415
    Text: 2295 Technical portal and online community for Design Engineers - www.element-14.com Relays & Solenoids Page 2343 2336 2310 2347 2298 2320 2346 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 Safety10 A331-1-C2A7M A331-1-C2-A73 24Vdc 110Vac 240Vac A331-1-C2-A7D relay finder 45.61 reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415

    BYT12-1000

    Abstract: GTO triac power IGBT MOSFET transistor GTO SCR di IR thyristor manual IR thyristor manual ST GTO thyristor driver power IGBT MOSFET GTO SCR diode power bjt advantages and disadvantages GTO thyristor Application notes Semiconductor Group igbt
    Text: APPLICATION NOTE CHARACTERISTICS OF POWER SEMICONDUCTORS by J. M. Peter ABSTRACT Advantages and disadvantages are summarised, and the relative cost of each solution indicated. This paper aims to give a brief overview of the essential characteristics of power semiconductors,


    Original     		PDF

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF

    APT13GP120BSC

    Abstract: T0-247
    Text: APT13GP120BSC 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


    Original     		PDF APT13GP120BSC O-247 Col610) APT13GP120BSC T0-247

    MOSFET IRF 630

    Abstract: No abstract text available
    Text: vx-b’J=X ll7-MOSFET vx-n SERIES POWER MOSFET n 9+jf$+jkH O U T L I N E D I M E N S I O N S Case : E-pack 1 i : iate 2 4 1 IIraln 3 : Source [Unit : mm] ‘I - 1; -‘J 1 -7 $, &I 11 2 3-, P12, 7-l Q f ‘g ( 7’: $ 1 1 Lead type is available. See P. 12, 7-l


    Original     		PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    1N4148 SOD-80

    Abstract: AN-6078SC fairchild AN-6078SC atx power 500W 24 pin smd transistor 2f Core-ERL35 TRANSFORMER ERL35 smd transistor 3 fz C20A smd VC1031
    Text: www.fairchildsemi.com AN-6078SC FAN480X PFC+PWM集成控制器 FAN4800A / FAN4800C / FAN4801 / FAN4802 FAN480X可取代FAN4800與ML4800，只需在周邊 1. 簡介 這篇應用指南用於幫助使用者使用FAN480X設計 高效率的電源供應器，FAN480X由採用平均電流控制


    Original     		PDF AN-6078SC FAN480X FAN4800A FAN4800C FAN4801 FAN4802 FAN480XFAN4800ML4800 FAN480X FAN4801/2PFC 1N4148 SOD-80 AN-6078SC fairchild AN-6078SC atx power 500W 24 pin smd transistor 2f Core-ERL35 TRANSFORMER ERL35 smd transistor 3 fz C20A smd VC1031

    SA55BA60

    Abstract: tig ac inverter circuit MOSFET welding INVERTER tig welding machine INVERTER ARC WELDING igbt based welding machine inverter new welding machine circuit SA55BA602 bjt 40A 600V part number MOSFET welding INVERTER 200A
    Text: APPLICATION NOTE AN-1045 International Rectifier • 233 Kansas Street El Segundo CA 90245 USA AC TIG Welding: Output Inverter Design Basics By A. Roccaro, R. Filippo, M. Salato Topics Covered Introduction Application on TIG welding Full Bridge Inverter Half-Bridge Inverter


    Original     		PDF AN-1045 AN-955 AN-1012 AN-1023 SA55BA60 tig ac inverter circuit MOSFET welding INVERTER tig welding machine INVERTER ARC WELDING igbt based welding machine inverter new welding machine circuit SA55BA602 bjt 40A 600V part number MOSFET welding INVERTER 200A

    transistor t2a surface mount

    Abstract: A506 ed1b a506 diode STTA506B a506b
    Text: f Z T SGS-THOMSON Ä T# RfflD g^(ô ILI ¥^@R3D(Si STTA506B(-TR) TURBOSWITCH " A " . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If(av) 5A V rrm 600 V 1.5V V f (max) tr r (typ) PRELIMINARY DATASHEET 20 ns FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS:


    OCR Scan     		PDF STTA506B transistor t2a surface mount A506 ed1b a506 diode a506b

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    schematic surge protector ac mains

    Abstract: No abstract text available
    Text: CLP270M Application Specific Discretes A.S.D. OVERVOLTAGE AND OVERCURRENT p r o t e c t io n f o r t e l e c o m l in e PRELIMINARY DATASHEET MAIN APPLICATIONS Any telecom equipm ent submitted to transient overvoltages and lightning strikes such as : • Analog and ISDN line cards


    OCR Scan     		PDF CLP270M schematic surge protector ac mains