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    N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Search Results

    N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd

    N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MTC3585G6

    Abstract: MTC3585
    Text: Spec. No. : C416G6 Issued Date : 2007.07.13 Revised Date :2009.03.16 Page No. : 1/8 CYStech Electronics Corp. N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC3585G6 Description The MTC3585G6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single


    Original     		C416G6 MTC3585G6 MTC3585G6 UL94V-0 MTC3585 PDF

    single P-Channel mosfet sot-26

    Abstract: VGS-12V N-Channel mosfet sot-26
    Text: Spec. No. : C416N6 Issued Date : 2007.07.12 Revised Date : Page No. : 1/8 CYStech Electronics Corp. N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC3585N6 Description The MTC3585N6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single


    Original     		C416N6 MTC3585N6 MTC3585N6 OT-26 OT-26 MTC358ny UL94V-0 single P-Channel mosfet sot-26 VGS-12V N-Channel mosfet sot-26 PDF

    2SK1672

    Abstract: 2SK1533 2sk2280 2SK228
    Text: N & P CHANNEL POWER MOSFETS N AND P CHANNEL ENHANCEMENT MODE • UP TO 900V AT 1.0 AMP WITH 2KV DIELECTRIC STRENGTH • LOW INPUT CAPACITANCE, LOW RDS ON AND FAST SWITCHING TIMES N CHANNEL ENHANCEMENT MODE TC = 25˚C The latest comprehensive data to fully


    Original     		2SK1194 2SK1195 2SK1533 2SK1672 2SK1861 2SK1931 2SK2177 2SK2178 2SK2179 2SK2279 2sk2280 2SK228 PDF

    5806SS

    Abstract: DIODE vsd N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET 5806-S
    Text: CYStech Electronics Corp. Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : Page No. : 1/9 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC5806Q8 Description The MTC5806Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8


    Original     		C407Q8 MTC5806Q8 MTC5806Q8 UL94V-0 5806SS DIODE vsd N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET 5806-S PDF

    4503ss

    Abstract: 24v 6A mosfet MTC4503Q8 4503ss equivalent 24V 1A mosfet 4503s
    Text: CYStech Electronics Corp. Spec. No. : C384Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 1/8 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503Q8 Description The MTC4503Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8


    Original     		C384Q8 MTC4503Q8 MTC4503Q8 UL94V-0 4503ss 24v 6A mosfet 4503ss equivalent 24V 1A mosfet 4503s PDF

    4501ss

    Abstract: MTC4501Q8 C385Q8 CYStech Electronics N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET 4501s
    Text: CYStech Electronics Corp. Spec. No. : C385Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4501Q8 Description The MTC4501Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8


    Original     		C385Q8 MTC4501Q8 MTC4501Q8 UL94V-0 4501ss C385Q8 CYStech Electronics N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET 4501s PDF

    SI4532DY

    Abstract: F852 transistor CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
    Text: Si4532DY Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		Si4532DY -30Voduct F852 transistor CBVK741B019 F011 F63TNR F852 FDS9953A L86Z PDF

    NDH8320C

    Abstract: No abstract text available
    Text: N December 1996 NDH8320C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    Original     		NDH8320C NDH8320C PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very


    Original     		Si4532DY PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4532DY Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very


    Original     		Si4532DY PDF

    D665

    Abstract: SI4532DY w992
    Text: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very


    Original     		Si4532DY D665 w992 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very


    Original     		Si4532DY PDF

    N P CHANNEL dual POWER MOSFET

    Abstract: NDH8320C
    Text: N September 1996 PRELIMINARY NDH8320C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    Original     		NDH8320C NDH8320C N P CHANNEL dual POWER MOSFET PDF

    NDH8520C

    Abstract: No abstract text available
    Text: N September 1996 PRELIMINARY NDH8520C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    Original     		NDH8520C NDH8520C PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4539DY Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		Si4539DY PDF

    NDS9943

    Abstract: No abstract text available
    Text: N February 1996 NDS9943 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very


    Original     		NDS9943 NDS9943 PDF

    Untitled

    Abstract: No abstract text available
    Text: February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		NDS9952A PDF

    NDS9952A

    Abstract: No abstract text available
    Text: February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		NDS9952A NDS9952A PDF

    NDS9952A

    Abstract: No abstract text available
    Text: February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		NDS9952A NDS9952A PDF

    F011

    Abstract: F63TNR F852 L86Z NDS9952A
    Text: February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		NDS9952A F011 F63TNR F852 L86Z NDS9952A PDF

    8928a

    Abstract: FDS8928A SOIC-16 1130 pch
    Text: July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		FDS8928A 8928a FDS8928A SOIC-16 1130 pch PDF

    Untitled

    Abstract: No abstract text available
    Text: May 1996 national Semiconductor~ NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode • N-Channel 3.5A, 20V, RDS 0N| = 0.10 @ VGS = 10V. power field effect transistors are produced using


    OCR Scan     		NDS9958 PDF

    4-221

    Abstract: transistor mosfet n-ch drain current NDS9958 Dual N & P-Channel MOSFET
    Text: National Semiconductor" May 1996 NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		NDS9958 b501130 0Q400bl 4-221 transistor mosfet n-ch drain current NDS9958 Dual N & P-Channel MOSFET PDF

    nds9942

    Abstract: No abstract text available
    Text: National & Semiconductor" May 1996 NDS9942 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		NDS9942 nds9942 PDF