SOJ-400
Abstract: No abstract text available
Text: EDO/FP DIMM/SODIMM Code Information MXXXXXXXXXXX - XXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 12. PCB Revision 0 : None 2 : 2nd Rev. 4 : 4th Rev. 1. Memory Module M 2. Module Configuration 3 : DIMM 4 : 8 Byte SODIMM 1 : 1st Rev. 3 : 3rd Rev. 13. "─"
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Com15
SOJ-400
TSOP2-400
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PC100
Abstract: pc133 SDRAM DIMM package 128MB
Text: SDRAM Module Code Information Last Updated : August 2009 MXXXXXXXXXXX - XXXXX 1 2 3 5 4 6 7 1. Memory Module M 2. Module Configuration 3 : 4/8 Byte DIMM (100, 168, 200, 232, 278pin) 4 : 8 Byte SODIMM (144pin) 3~4. Data bits 23 : x144/ECC PLL+Register DIMM
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278pin)
144pin)
x144/ECC
PC100
x72/ECC
200pin
168pin
128Mb/512Mb)
pc133 SDRAM DIMM package
128MB
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SGRAM
Abstract: 17-18 g
Text: SGRAM Module Code Information MXXXXXXXXXXX - XXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory Module M 12. PCB Revision & Type 0 : None 2. Module Configuration 8 : 4 Byte AIMM (132pin) 13. "─" 3~4. Data bits 32 : x32 AIMM w/o SPD 14. Power C : Normal, Self Ref.
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132pin)
SGRAM
17-18 g
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Untitled
Abstract: No abstract text available
Text: RTX-MxxxxxxUM Series Page 1 of 4 … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … . Specification of Return Transmitter Module for Optical Node RTX-MxxxxxxUM Series
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886-2-ter
1310nm
1550nm
1470nm
1490nm
1510nm
1530nm
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54-WBGA
Abstract: 711Mbps
Text: RDRAM Module Code Information 1/2 Last Updated : February 2009 MXXXXXXXXXXX - XXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory Module(M) 10. Component Generation M : M-die 2. Module Configuration D : 32 bit RIMM (232pin) A : A-die B : B-die
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232pin)
294pin)
600Mbps
300MHz)
711Mbps
356MHz)
800Mbps
400MHz)
54-WBGA
711Mbps
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SOJ-400
Abstract: No abstract text available
Text: EDO/FP SIMM Code Information MXXXXXXXXXXX - XXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory Module M 11. Package J : SOJ-400(Gold Tab) 2. Module Configuration 5 : SIMM 12. PCB Revision 0 : None 3~4. Data bits 32 : x32 bit 13. "─" 5. Vcc, Mode1, Mode2
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SOJ-400
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240pin dimm socket
Abstract: udimm udimm 240pin DIMM 276-pin 294pin PC2700 184-Pin samsung 512mb ddr cl3 dimm
Text: DDR SDRAM Module Code Information 1/2 Last Updated : August 2009 MXXXXXXXXXXX - XXXXX 1 2 3 4 5 6 7 8 1. Memory Module(M) 9 10 11 12 13 14 15 16 17 18 5. Feature, Voltage L : DDR SDRAM, 2.5V 2. Module Configuration 3 : 4/8 Byte DIMM 4 : 4/8 Byte SODIMM 3~4. Data bit
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184pin
208pin
160pin
240pin
276pin
294pin
512MB
240pin dimm socket
udimm
udimm 240pin
DIMM
276-pin
PC2700
184-Pin
samsung 512mb ddr cl3 dimm
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Si502
Abstract: No abstract text available
Text: Si501/2/3 3 2 K H Z –100 MH Z CMEMS オ シ レ ー タ 機能 広い周波数範囲：32 kHz~100 MHz 周波数が 100 MHz 以上の場合は Silicon Labs にお問い合わせくだ さい。
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Si501/2/3
Si501
Si502
Si503
Si502
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Untitled
Abstract: No abstract text available
Text: Alle Hechte Vorbehalten/ ill rights resemi 1 2 3 I A k 5 6 M3x10 è H mxxxxxx ,_|-OO M :— — El 1 y 2 1 , 5 36 , 5 Oiiensions in m " t - Z I V C p ' Original Size DIN » 4 1- - - - - - * Nicht tolerierte Hafe/Free size Menaces Techn. Character. Dat.
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M3x10
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Untitled
Abstract: No abstract text available
Text: mxxxxxxxxxmoooooooocxxxvr Tx - SERIALIZER ÇN CO Rx - DESERIALIZER < C D C M r O ' v j - L o c Dr ^ o o c n o T - c M c o o 0Û Û0! a5! a5! a5! a5! a5! a5! a5! a5! a9! a^! a2! a27 N*
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TRW J500
Abstract: k45752 52S marking
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4260L, 424260L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The fiPD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page mode and
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uPD42S4260L
uPD424260L
16-BIT,
fiPD42S4260L,
424260L
PD42S4260L
44-pin
40-pin
/jPD42S4260L-A70,
424260L-A70
TRW J500
k45752
52S marking
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LXXXXXXXX
Abstract: TNC 24 mk 2 026R CY7C09569V tb136 A14L CY7C09579V
Text: «oaHaoooiMMMWfMMMMMM!9:^ v’*'» -• -■ -■ -^ jjÉBT *¿f5’00“’ '*'^ 7“T ■ ■ ■ ■ <1; .r {• o CY7C09569V CY7C09579V PRELIMINARY f:,ò b 3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM • 3.3V Low o p e ratin g p ow er
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CY7C09569V
CY7C09579V
16K/32K
FLEx36â
CY7C09569V)
CY7C09579V)
25-micron
100-MHz
LXXXXXXXX
TNC 24 mk 2
026R
CY7C09569V
tb136
A14L
CY7C09579V
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a00u
Abstract: Z32100 STK 411 230 WE32100 ALI m7 101b BUX 707 z32101 Z32103 BUDA lo4p
Text: Y " P ro d u ct S pecification January 1987 Z32103 D R A M C O N TR O LLER DESCRIPTION T he Z32103 D R A M Controller provides address multiplexing, access and cycle time management, and refresh control for dynam ic random access m emory DRAM . It provides, in a single chip,
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Z32103
32-bit
a00u
Z32100
STK 411 230
WE32100
ALI m7 101b
BUX 707
z32101
BUDA
lo4p
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67c4033-15n
Abstract: No abstract text available
Text: 67C4033 Advanced Micro Devices Low Density First-In First-Out FIFO 64 x 5 CMOS Memory (Cascadable) DISTINCTIVE CHARACTERISTICS • Zero standby power ■ High-speed 15 MHz shift-in/shlft-out rates ■ Very low active power consumption ■ TTL-compatible Inputs and outputs
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67C4033
67C4033
10684B-20
192x15
10684B-21
10684B-22
67c4033-15n
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Untitled
Abstract: No abstract text available
Text: TO SHIBA THM73V8015ATG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which
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THM73V8015ATG-4f-5
608-WORD
72-BIT
THM73V8015ATG
TC5165805AFT
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toshiba S-AU
Abstract: TC5165805
Text: TO SHIBA THM73V1635ATG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The TH M 73V1635ATG is a 16,777,216-word by 72-bit dynam ic R A M module consisting of 18 T C 5164405A F T D R A M s on a printed circu it board. This module is optimized for applications w hich
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216-WORD
72-BIT
THM73V1635ATG-4f-5
73V1635ATG
164405A
toshiba S-AU
TC5165805
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Untitled
Abstract: No abstract text available
Text: TO SHIBA THM65V8015ATG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The THM65V8015ATG is a 8,388,608-word by 64-bit dynamic RAM module consisting of eight TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which
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THM65V8015ATG-4f-5
608-WORD
64-BIT
THM65V8015ATG
TC5165805AFT
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LD113
Abstract: No abstract text available
Text: Advance Data Sheet October 1998 microelectronics group Lucent Technologies Bell Labs Innovations Ambassador T8100A, T8102, and T8105 H.100/H.110 Interfaces and Time-Slot Interchangers 1 Product Overview • Two independently programmable groups of up to
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T8100A,
T8102,
T8105
100/H
208-pin,
DS98-387NTNB
005002b
LD113
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Untitled
Abstract: No abstract text available
Text: HN29W6411A Series 64M AND type Flash Memory More than 16,057-sector 67,824,768-bit HITACHI ADE-203-865D€ (Z) Rev. 21.0 FebQet. 20, 1999K Description The Hitachi HN29W6411A Series is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are
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HN29W6411A
057-sector
768-bit)
ADE-203-865D
1999K
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acs 08 5s
Abstract: No abstract text available
Text: H M 6 7 0 9 S 6 r Ì G S — Preliminary 65536-Word x 4-Bit High Speed Static RAM with ÜE • FEATURES • Super Fast Access Tim e. • Fast 5 E Access T im e . • Low Power Dissipation.
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65536-Word
CP-28DN)
acs 08 5s
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HM514101
Abstract: FL256
Text: HM514101 C/CL Series 4,194,304-word x Preliminary 1-bit Dynamic Random Access Memory Rev. 0.0 Sep. 15,1994 HITACHI The Hitachi HM514101C/CL is a CMOS dynamic RAM organized 4,194,304-w ord x 1-bit. HM514101C7CL has realized higher density, higher performance and various functions by
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HM514101
304-word
HM514101C/CL
304-w
HM514101C7CL
300-mil
26-pin
400-mil
FL256
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT «P D 421165 1 M-BIT DYNAMIC RAM 64K-W ORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/W RITE MODE d e sc r ip tio n The JUPD421165 is a 65,536 words by 16 bits CMOS dynamic RAM with optional hyper page mode (EDO). Hyper page mode (EDO) is a kind of the page mode and is useful for the read operation.
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64K-W
16-BIT,
JUPD421165
44-pin
40-pin
21165-25-A
21165-30-A
P40LE-400A-2
PD421165
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Untitled
Abstract: No abstract text available
Text: Order this document by MCM516165B/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16,1K, and 4K Refresh The family of 16M Dynamic RAMs is fabricated using 0.50p. C M O S high-speed silicon-gate process technology. It includes devices organized as 1,048,576 six
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MCM516165B/D
MCM516165B
516165B
518165B
MCM516165B
MCM518165B
RMFAX09emaii
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upd4217405
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿iPD42S17405, 4217405 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, EDO Description The /¿PD42S17405, 4217405 are 4,194,304 words by 4 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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uPD42S17405
uPD4217405
PD42S17405,
PD42S17405
26-pin
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