SOJ-400
Abstract: No abstract text available
Text: EDO/FP DIMM/SODIMM Code Information MXXXXXXXXXXX - XXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 12. PCB Revision 0 : None 2 : 2nd Rev. 4 : 4th Rev. 1. Memory Module M 2. Module Configuration 3 : DIMM 4 : 8 Byte SODIMM 1 : 1st Rev. 3 : 3rd Rev. 13. "─"
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Com15
SOJ-400
TSOP2-400
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PC100
Abstract: pc133 SDRAM DIMM package 128MB
Text: SDRAM Module Code Information Last Updated : August 2009 MXXXXXXXXXXX - XXXXX 1 2 3 5 4 6 7 1. Memory Module M 2. Module Configuration 3 : 4/8 Byte DIMM (100, 168, 200, 232, 278pin) 4 : 8 Byte SODIMM (144pin) 3~4. Data bits 23 : x144/ECC PLL+Register DIMM
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278pin)
144pin)
x144/ECC
PC100
x72/ECC
200pin
168pin
128Mb/512Mb)
pc133 SDRAM DIMM package
128MB
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SGRAM
Abstract: 17-18 g
Text: SGRAM Module Code Information MXXXXXXXXXXX - XXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory Module M 12. PCB Revision & Type 0 : None 2. Module Configuration 8 : 4 Byte AIMM (132pin) 13. "─" 3~4. Data bits 32 : x32 AIMM w/o SPD 14. Power C : Normal, Self Ref.
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132pin)
SGRAM
17-18 g
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Untitled
Abstract: No abstract text available
Text: RTX-MxxxxxxUM Series Page 1 of 4 … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … . Specification of Return Transmitter Module for Optical Node RTX-MxxxxxxUM Series
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886-2-ter
1310nm
1550nm
1470nm
1490nm
1510nm
1530nm
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54-WBGA
Abstract: 711Mbps
Text: RDRAM Module Code Information 1/2 Last Updated : February 2009 MXXXXXXXXXXX - XXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory Module(M) 10. Component Generation M : M-die 2. Module Configuration D : 32 bit RIMM (232pin) A : A-die B : B-die
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232pin)
294pin)
600Mbps
300MHz)
711Mbps
356MHz)
800Mbps
400MHz)
54-WBGA
711Mbps
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SOJ-400
Abstract: No abstract text available
Text: EDO/FP SIMM Code Information MXXXXXXXXXXX - XXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory Module M 11. Package J : SOJ-400(Gold Tab) 2. Module Configuration 5 : SIMM 12. PCB Revision 0 : None 3~4. Data bits 32 : x32 bit 13. "─" 5. Vcc, Mode1, Mode2
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SOJ-400
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240pin dimm socket
Abstract: udimm udimm 240pin DIMM 276-pin 294pin PC2700 184-Pin samsung 512mb ddr cl3 dimm
Text: DDR SDRAM Module Code Information 1/2 Last Updated : August 2009 MXXXXXXXXXXX - XXXXX 1 2 3 4 5 6 7 8 1. Memory Module(M) 9 10 11 12 13 14 15 16 17 18 5. Feature, Voltage L : DDR SDRAM, 2.5V 2. Module Configuration 3 : 4/8 Byte DIMM 4 : 4/8 Byte SODIMM 3~4. Data bit
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184pin
208pin
160pin
240pin
276pin
294pin
512MB
240pin dimm socket
udimm
udimm 240pin
DIMM
276-pin
PC2700
184-Pin
samsung 512mb ddr cl3 dimm
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EIA-481-B
Abstract: No abstract text available
Text: MTDS Series – 5 x 7 Ceramic SMD TCXO ¾ Low Profile SMD TCXO ¾ Clipped Sinewave Output ¾ RoHS Compliant ¾ Low Power Consumption ELECTRICAL SPECIFICATIONS: Frequency Range Frequency Stability vs Temperature * Operating Temperature Range Storage Temperature Range
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600MHZ
000MHZ
EIA-481-B,
200mm
MTD102908F
EIA-481-B
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SBR CODEC
Abstract: speaker with screen LQFP48 LQFP64 LQFP80 PR3000 UCB1100 capacitive multi touch delta sigma a d conversion technique overview circuit diagram of ADC connection to pic
Text: INTEGRATED CIRCUITS DATA SHEET UCB1100 Advanced modem/audio analog front-end Preliminary specification File under Integrated Circuits, <Handbook> 1997 Apr 11 Philips Semiconductors Preliminary specification Advanced modem/audio analog front-end UCB1100 FEATURES
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UCB1100
OT313)
12-bit
14-bit
SBR CODEC
speaker with screen
LQFP48
LQFP64
LQFP80
PR3000
UCB1100
capacitive multi touch
delta sigma a d conversion technique overview
circuit diagram of ADC connection to pic
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Untitled
Abstract: No abstract text available
Text: MB03N65D0000000 N-Ch 650V Fast Switching MOSFETs General Description Product Summery The MB03N65D is the highest performance N-ch MOSFETs with specialized high voltage technology, which provide excellent RDSON and gate charge for most of the SPS, Charger ,Adapter
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MB03N65D0000000
MB03N65D
D020210
O-252
O-252
3000pcs
6000pcs
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Si502
Abstract: No abstract text available
Text: Si501/2/3 3 2 K H Z –100 MH Z CMEMS オ シ レ ー タ 機能 広い周波数範囲：32 kHz~100 MHz 周波数が 100 MHz 以上の場合は Silicon Labs にお問い合わせくだ さい。
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Si501/2/3
Si501
Si502
Si503
Si502
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EIA-481-B
Abstract: No abstract text available
Text: MTTB Series – 5 X 3.2 Ceramic SMD VCTCXO Low Profile SMD Device Hermetically Sealed Tight Stability Over Temperature Low Power Consumption Frequency Range Frequency Stability vs Temperature* Operating Temperature Range Storage Temperature Range
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000MHZ
000MHZ
50VDC
40VDC
50VDC
40VDC
EIA-481-B
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EIA-481-B
Abstract: No abstract text available
Text: H Series Crystal 3.5mm x 6 mm x1.2mm Ceramic Package Tight Tolerance and Stability Wide Frequency Range Tape and Reel Packaging Available Frequency Range 8.000MHZ to 100.000MHZ Frequency Tolerance / Stability See Part Number Guide for Options
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000MHZ
000MHZ
100VDC
15VDC
EIA-481-B,
200mm
EIA-481-B
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Untitled
Abstract: No abstract text available
Text: MAH Series 14 Pin DIP Oscillator Industry Standard Package RoHS Compliant Available HCMOS Output Wide Frequency Range Frequency Range Frequency Stability Inclusive of Temperature, Load, Voltage and Aging Operating Temperature
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000kHz
000MHz
001MHz
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Untitled
Abstract: No abstract text available
Text: mxxxxxxxxxmoooooooocxxxvr Tx - SERIALIZER ÇN CO Rx - DESERIALIZER < C D C M r O ' v j - L o c Dr ^ o o c n o T - c M c o o 0Û Û0! a5! a5! a5! a5! a5! a5! a5! a5! a9! a^! a2! a27 N*
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TRW J500
Abstract: k45752 52S marking
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4260L, 424260L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The fiPD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page mode and
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uPD42S4260L
uPD424260L
16-BIT,
fiPD42S4260L,
424260L
PD42S4260L
44-pin
40-pin
/jPD42S4260L-A70,
424260L-A70
TRW J500
k45752
52S marking
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LXXXXXXXX
Abstract: TNC 24 mk 2 026R CY7C09569V tb136 A14L CY7C09579V
Text: «oaHaoooiMMMWfMMMMMM!9:^ v’*'» -• -■ -■ -^ jjÉBT *¿f5’00“’ '*'^ 7“T ■ ■ ■ ■ <1; .r {• o CY7C09569V CY7C09579V PRELIMINARY f:,ò b 3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM • 3.3V Low o p e ratin g p ow er
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CY7C09569V
CY7C09579V
16K/32K
FLEx36â
CY7C09569V)
CY7C09579V)
25-micron
100-MHz
LXXXXXXXX
TNC 24 mk 2
026R
CY7C09569V
tb136
A14L
CY7C09579V
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a00u
Abstract: Z32100 STK 411 230 WE32100 ALI m7 101b BUX 707 z32101 Z32103 BUDA lo4p
Text: Y " P ro d u ct S pecification January 1987 Z32103 D R A M C O N TR O LLER DESCRIPTION T he Z32103 D R A M Controller provides address multiplexing, access and cycle time management, and refresh control for dynam ic random access m emory DRAM . It provides, in a single chip,
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Z32103
32-bit
a00u
Z32100
STK 411 230
WE32100
ALI m7 101b
BUX 707
z32101
BUDA
lo4p
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67c4033-15n
Abstract: No abstract text available
Text: 67C4033 Advanced Micro Devices Low Density First-In First-Out FIFO 64 x 5 CMOS Memory (Cascadable) DISTINCTIVE CHARACTERISTICS • Zero standby power ■ High-speed 15 MHz shift-in/shlft-out rates ■ Very low active power consumption ■ TTL-compatible Inputs and outputs
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67C4033
67C4033
10684B-20
192x15
10684B-21
10684B-22
67c4033-15n
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Untitled
Abstract: No abstract text available
Text: !» GEC P L E S S E Y S e p te m b e r 1995 PRELIMINARY INFORMATION SEMICONDUCTORS DS3112-2.0 P1480 LAN CAM 1kx64-BIT CMOS CONTENT-ADDRESSABLE MEMORY S u p e rs e d e s F e b ru a ry 1 9 9 2 ed itio n The P1480 LAN CAM is a 1K X 64-bit fixed-widlh CMOS Content-addressable Memory (CAM aimed at address
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DS3112-2
P1480
1kx64-BIT
P1480
64-bit
D05S4Q2
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Untitled
Abstract: No abstract text available
Text: TO SHIBA THM73V8015ATG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which
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THM73V8015ATG-4f-5
608-WORD
72-BIT
THM73V8015ATG
TC5165805AFT
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toshiba S-AU
Abstract: TC5165805
Text: TO SHIBA THM73V1635ATG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The TH M 73V1635ATG is a 16,777,216-word by 72-bit dynam ic R A M module consisting of 18 T C 5164405A F T D R A M s on a printed circu it board. This module is optimized for applications w hich
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216-WORD
72-BIT
THM73V1635ATG-4f-5
73V1635ATG
164405A
toshiba S-AU
TC5165805
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Untitled
Abstract: No abstract text available
Text: TO SHIBA THM65V8015ATG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The THM65V8015ATG is a 8,388,608-word by 64-bit dynamic RAM module consisting of eight TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which
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THM65V8015ATG-4f-5
608-WORD
64-BIT
THM65V8015ATG
TC5165805AFT
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LD113
Abstract: No abstract text available
Text: Advance Data Sheet October 1998 microelectronics group Lucent Technologies Bell Labs Innovations Ambassador T8100A, T8102, and T8105 H.100/H.110 Interfaces and Time-Slot Interchangers 1 Product Overview • Two independently programmable groups of up to
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T8100A,
T8102,
T8105
100/H
208-pin,
DS98-387NTNB
005002b
LD113
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