MXP7002
Abstract: IR 2E09
Text: MXP7002 I N T E G R A T E D P R O D U C T S 3.125 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION either bond wire or flip chip configurations. This device is ideal for manufacturers of optical receivers, transponders, optical transmission
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MXP7002
850nm
MXP7002
High893-2570
IR 2E09
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DIODE ED 11
Abstract: No abstract text available
Text: Obsolete Product - not recommended for new design MXP7002 I N T E G R A T E D P R O D U C T S 3.125 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION 100µm aperture Semi-insulating substrate High Responsivity Low Dark Current High Bandwidth
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MXP7002
DIODE ED 11
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construction of photo diode
Abstract: MXP7000 MXP7002 PIN PHOTO DIODE GaAs wafer 850nm Receivers
Text: MXP7002 – 3.125Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S Gigabit Ethernet, Fibre Channel
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MXP7002
125Gbps
MXP7000
850nm
construction of photo diode
MXP7002
PIN PHOTO DIODE
GaAs wafer
850nm Receivers
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Untitled
Abstract: No abstract text available
Text: MXP7002 – 2.5Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S Gigabit Ethernet, Fibre Channel
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Original
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PDF
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MXP7002
MXP7000
850nm
850nm
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vcsel receiver
Abstract: MXP7002 IR 2E09 850nm 300 nA photo Diode
Text: MXP7002 I N T E G R A T E D P R O D U C T S 3.125 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION either bond wire or flip chip configurations. This device is ideal for manufacturers of optical receivers, transponders, optical transmission
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Original
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PDF
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MXP7002
850nm
MXP7002
High-893-2570
vcsel receiver
IR 2E09
850nm 300 nA photo Diode
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