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    Untitled

    Abstract: No abstract text available
    Text: MWT1171SP Transistors N-Channel UHF/Microwave MESFET V BR DSS (V)9 V(BR)GSS (V)6 I(D) Max. (A)1.3 P(D) Max. (W)4.0 Maximum Operating Temp (øC)150 I(DSS) Min. (A)400m I(DSS) Max. (A)920m @V(DS) (V) (Test Condition)3.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.290m


    Original     		PDF MWT1171SP

    MWT1171HP

    Abstract: No abstract text available
    Text: MICROWAVE TECHNOLOGY bbE D • blEMlQG ÜDDDS^b ET7 ■ PIRIdV MwT-11 16 GHz HIGH POWER GaAs FET MicroWave Technology 1-751 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES 1-731 1 WATT POWER OUTPUT AT 12 GHZ HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY M ETAL/GOLD


    OCR Scan     		PDF MwT-11 MwT-11 MWT1171HP

    MWT1171HP

    Abstract: 1171H
    Text: M e M wT -11 16 GHz HIGH POWER GaAs FET ? MicroWave Technology 4268 Solar way Fremont, 94538 510-651-670q f a x s io -651-22Q8 FEATURES »-751 t-73-l ca • 1 WATT POWER OUTPUT AT 12 GHZ • HIGH ASSOCIATED GAIN 343 • 0.3 MICRON REFRACTORY METAL/GOLD GATE


    OCR Scan     		PDF t-73-l 510-651-670q -651-22Q8 MwT-11 MwT-11 -F90- MWT1171HP 1171H