ap910401
Abstract: mmic code h5 MWT-PH15 WPS44 MMA-054025-Q3 MWT-10 mps080817nxx 445122 MGA-242740-02 MMA-343737-Q10
Text: New Products in 2010 New Linear GaN Amplifiers • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at 4.4 to 4.9 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical • Flexible Customization for other Frequency Bands using Hybrid Technology
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MGA-444940-02
ap910401
mmic code h5
MWT-PH15
WPS44
MMA-054025-Q3
MWT-10
mps080817nxx
445122
MGA-242740-02
MMA-343737-Q10
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MPS 808
Abstract: MWT-PH15 WPS-445122-XX mmic code h5 MPS 806 transistor MwT-10 ap910401 GaN amplifier MMA-022028-S7 mps 0820
Text: New Products in 2009 New Linear GaN Amplifiers for WiMax Applications • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at Typical WiMax Frequency Bands: 2.5, 3.5, and 5.5 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical
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MPS 808
Abstract: MwT-10 252724 445122 MwT-h17 MIL-PRF38535 Power Amplifier MMIC 2.6 GHz 0218-H4N2 .H2 sot89 solar voltage regulator
Text: New Products in 2009 New Linear GaN Amplifiers for WiMax Applications • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at Typical WiMax Frequency Bands: 2.5, 3.5, and 5.5 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
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Quality System
Abstract: GaN Amplifiers Wireless Amplifiers Hybrid Modules mwtinc GM-141526-H4
Text: MMIC Amplifiers High Performance/Quality MMIC Based on InGaP HBT, pHEMT, and Linear MESFET Technologies High Linearity, Fully Matched WiMax Power Amplifiers Military Screening Available on Hermetically Sealed Package Products Low Cost Commercial Products
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Untitled
Abstract: No abstract text available
Text: MwT-102G XTH m 2-18 GHz MMIC AMPLIFIER MODULE MICROWAVE TECHNOLOGY B • » m 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 7.0 dB TYPICAL SMALL SIGNAL GAIN 1.9:1 TYPICAL VSWR 16 dBm TYPICAL P1dB ±0.75 dB TYPICAL OUTPUT POWER FLATNESS SINGLE SUPPLY BIAS
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MwT-102G
MwT-102G-GFP
-M79-
FAX510-651-2208
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Untitled
Abstract: No abstract text available
Text: MI CR O W A V E T E C H N O L O G Y bhE D • b l E M l G G Q D 0 D E T 2 bSl ■ H R W V MwT-10 GN / SN / LN 40 GHz Low Noise GaAs FET DEVICE MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 415-651-6700 FAX 415-651-2208 FEATURES 5.5 dB GAIN IN 18-26.5 GHz BALANCED CIRCUIT
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MwT-10
79CHIP
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Untitled
Abstract: No abstract text available
Text: bbE D MI CR O W A V E T E C H N O L O G Y b l E U l G D DDDD3Dfl AMT IMRU V MwT-101 2-8 GHz MMIC AMPLIFIER CHIP MICROWAVE TECHNOLOGY 4268 Solar W ay Fremont, CA 94538 510-651-6700 FAX 510-651-2208 • 30 dB TYPICAL REVERSE ISOLATION • *0.6 dB TYPICAL OUTPUT POWER FLATNESS
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MwT-101
MwT-101-GFP
F102-
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Untitled
Abstract: No abstract text available
Text: MwT-101G U&kM 2-8GHZ MMIC AMPLIFIER MODULE 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 MICROWAVE TECHNOLOGY Ï DJ] i Tl •14 dB TYPICAL GAIN • 1.5:1 TYPICAL INPUT AND OUTPUT VSWR • 30 dB TYPICAL REVERSE ISOLATION • ±0.6 dB TYPICAL OUTPUT POWER FLATNESS
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MwT-101G
FAX510-651-2208
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Untitled
Abstract: No abstract text available
Text: M w T -1 0 G N / S N / LN 40 GHz Low Noise GaAs FET DEVICE MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 415-651-6700 FAX 415-651-2208 FEATURES • 5.5 dB GAIN IN 18-26.5 GHz BALANCED CIRCUIT • 4.5 dB NF IN 18-26.5 GHz BALANCED CIRCUIT • 0.3 MICRON REFRACTORY METAL/GOLD GATE
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-B79-
MwT-10
-F86-
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Untitled
Abstract: No abstract text available
Text: 2-8 GHz MMIC AMPLIFIER CHIP M ic r o W a v e • 4268 Solar Way Fremont, CA 94538 415-651-6700 FAX 415-651-2208 Tech no lo g y -¡MICROWAVE TECHNOLOGY 37E D b l 2 4 1 Q0 0 Q0 D0 Ö0 T IMRÙJV • 35 dB TYPICAL REVERSE ISOLATION •+0.5 dB TYPICAL OUTPUT POWER FLATNESS
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MwT-101-GFP
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Untitled
Abstract: No abstract text available
Text: MwT-102G 2-18 GHz MMIC AMPLIFIER MODULE MICROWAVE TECHNOLOGY • 7.0 dBTYPICALSMALL SIGNAL GAIN •1.9:1 TYPICAL VSWR •1 6 dBm TYPICAL P1dB • d0.75 dB TYPICAL OUTPUT POWER FLATNESS •SINGLE SUPPLY BIAS • CENTER FEED CONFIGURATION • IDEAL FOR LIMITING AMPLIFIER APPUCATIONS
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MwT-102G
MwT-102G-GFP
FAX510-651-2208
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Untitled
Abstract: No abstract text available
Text: MwT-102 2-18 GHz MMIC AMPLIFIER CHIP M / Î 7 MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 • 25 dB TYPICAL REVERSE ISOLATION • ±0.75 dB TYPICAL OUTPUT POWER FLATNESS • 7.5 mA/dB TYPICAL GAIN EFFICIENCY • -16 dBc TYPICAL SECOND HARMONICS AT Psat
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MwT-102
MwT-102-GFP
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dg471
Abstract: No abstract text available
Text: w. g MICROWAVE TEC H NO LO G Y HYBRID MIC MODULES 4 2 6 8 SolarWay Fremont, CA 9 4 5 3 8 5 1 0 -6 5 1 -6 7 0 0 F A X 5 1 0 -6 5 1 -2 2 0 8 FEATURES • Low Cost, Miniature Blocks for Drop-In Hybrid Applications • Defense and Commercial Low Noise and Power Applications
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MwT-2123-2P1
MwT-2123-3P1
MwT-2123-5G1
MwT-0206-TCM
MwT-0618-TCM
MwT-0618-VRM
CA94538
MX510-651-2208
dg471
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Untitled
Abstract: No abstract text available
Text: MwT -0208-101DG/TC 2.0-8.0 GHz, SELF TEMPERATURE COMPENSATING MMIC AMPLIFIER MODULE MICROWAVE TECHNOLOGY 426 8 Solar W ay Fremont, CA 94538 510-651-6700 FAX 510-651-2208 TYPICAL SPECIFICATIONS @ 25°C JUl 3TTB •H Jn UU • 25 dB SMALL SIGNAL GAIN • 1.0 dB GAIN VARIATION, -54°C TO +95°C
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-0208-101DG/TC
100mA@
MwT-101
MWAVS046
-M32-
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AX5101
Abstract: No abstract text available
Text: PRODUCT SELECTION GUIDE M ic r o w a v e GALUUM ARSENIDE FIELD EFFECT TRANSISTORS 100 MHz TO 40 GHz tec h no lo g y ABOUT MwT MwT is located in the heart of California’s Silicon Valley in 3 0 ,0 0 0 square feet of m odern fa c ilitie s d e d ic a te d to the
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MwT-10
MwT-11
MwT-13
MwT-14
MwT-15
MwT-16
241X775
241X407
241X356
AX5101
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A 102G - resistance
Abstract: No abstract text available
Text: MwT-102G 2-18 GHz MMIC AMPLIFIER MODULE ^ M IC R O W A V E TECHNOLOGY • 4268 Solar Way Fremont, CA 94538 415-651-6700 FAX 415-651-2208 ItË T D jMICROUAVE TECHNOLOGY T n V é m ,270 » • • • • • -■ :■ Lill 1 122 H blEMlQG GGOGOTb Ö f BIMRIilV
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MwT-102G
Typical11
MWT-102G-GFP
A 102G - resistance
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Untitled
Abstract: No abstract text available
Text: MwT-102 2-18 GHz MMIC AMPLIFIER CHIP M ß k U L MICROWAVE TECHNOLOGY 4268 solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 • 25 dB TYPICAL REVERSE ISOLATION • ±0.75 dB TYPICAL OUTPUT POWER FLATNESS • 7.5 mA/dB TYPICAL GAIN EFFICIENCY • -16 dBc TYPICAL SECOND HARMONICS AT Psat
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MwT-102
MwT-102-GFP
VDDO100
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Untitled
Abstract: No abstract text available
Text: niCROül A VE TECHNOLOGY bbE D • blBMlDD □ □ DD 3 T5 EMI « M R I i l V MwT-102G 2-18 GHz MMIC AMPLIFIER MODULE MICROWAVE TECHNOLOGY 7.0 dB TYPICAL SMALL SIGNAL GAIN 1.9:1 TYPICAL VSWR 16 dBm TYPICAL P1dB ±0.75 dB TYPICAL OUTPUT POWER FLATNESS SINGLE SUPPLY BIAS
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MwT-102G
X510-651-2208
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MwT-10
Abstract: No abstract text available
Text: MwT-10 40 GHz Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y M 5.5 dB GAIN IN 18-26.5 GHz BALANCED CIRCUIT 4.5 dB NF IN 18-26.5 GHz BALANCED CIRCUIT 0.3 MICRON REFRACTORY METAL/GOLD GATE DIAMOND-UKE CARBON DLC PASSIVATION APPLICATIONS UP TO 40 GHz
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MwT-10
MwT-10
MwT10
wT-10.
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Untitled
Abstract: No abstract text available
Text: MwT-102 2-18 GHz MMIC AMPLIFIER CHIP MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 • 25 dB TYPICAL REVERSE ISOLATION • ±0.75 dB TYPICAL OUTPUT POWER FLATNESS • 7.5 mA/dB TYPICAL GAIN EFFICIENCY • -16 dBe TYPICAL SECOND HARMONICS AT Psat
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MwT-102
MwT-102-GFP
100strates,
-F110-
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Untitled
Abstract: No abstract text available
Text: MwT-101 2-8 GHz MMIC AMPLIFIER CHIP MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 30 dB TYPICAL REVERSE ISOLATION • 40.6 dB TYPICAL OUTPUT POWER FLATNESS • 3 mA/dB TYPICAL GAIN EFFICIENCY • -16 dBc TYPICAL SECOND HARMONICS AT Psat
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MwT-101
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Untitled
Abstract: No abstract text available
Text: MwT-101G 2-8GHZ MMIC AMPLIFIER MODULE MICRO WA VE TEC HNOLOG Y 4268 Solar W ay Fremont, CA 94538 510-651-6700 FAX 510-651-2208 • 14 dB TYPICALGAIN • 1.5:1 TYPICAL INPUT AND OUTPUT VSWR • 30 dB TYPICAL REVERSE ISOLATION • d0.6 dB TYPICAL OUTPUT POWER FLATNESS
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MwT-101G
-101G
FAX510-651-2208
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Untitled
Abstract: No abstract text available
Text: MwT-10 40 GHz Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y M 5.5 dB GAIN IN 18-26.5 GHz BALANCED CIRCUIT 4.5 dB NF IN 18-26.5 GHz BALANCED CIRCUIT 0.3 MICRON REFRACTORY METAL7GOLD GATE DIAMOND-UKE CARBON DLC PASSIVATION APPLICATIONS UP TO 40 GHz
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MwT-10
MwT-10
MwT10
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