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    MW510 Price and Stock

    TE Connectivity SQMW510RJ

    RES 10 OHM 5% 5W RADIAL
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    DigiKey SQMW510RJ Bulk 16,795 1
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    Avnet Americas SQMW510RJ Reel 19 Weeks, 2 Days 1,000
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    Mouser Electronics SQMW510RJ 339
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    Newark SQMW510RJ Bulk 539 1
    • 1 $0.636
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    Interstate Connecting Components SQMW510RJ 207
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    Avnet Abacus SQMW510RJ 16 Weeks 1,000
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    SQMW510RJ 18
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    TE Connectivity SMW510RJT

    RES SMD 10 OHM 5% 5W 5329
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    DigiKey SMW510RJT Cut Tape 9,321 1
    • 1 $1.1
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    SMW510RJT Digi-Reel 9,321 1
    • 1 $1.1
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    SMW510RJT Reel 8,000 500
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    Avnet Americas SMW510RJT Ammo Pack 13 Weeks, 6 Days 1
    • 1 $0.566
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    SMW510RJT Reel 15 Weeks, 2 Days 500
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    SMW510RJT Reel 23 Weeks, 4 Days 1,000
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    Mouser Electronics SMW510RJT 10,894
    • 1 $0.84
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    Newark SMW510RJT Cut Tape 413 1
    • 1 $0.517
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    SMW510RJT Reel 1,000
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    Avnet Abacus SMW510RJT 17 Weeks 1,000
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    Chip1Stop SMW510RJT 500
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    Component Electronics, Inc SMW510RJT 6
    • 1 $1.15
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    IBS Electronics SMW510RJT 500 1,059
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    Master Electronics SMW510RJT 11,500
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    TE Connectivity SMW5100RJT

    RES SMD 100 OHM 5% 5W 5329
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    DigiKey SMW5100RJT Cut Tape 2,489 1
    • 1 $1.76
    • 10 $1.027
    • 100 $0.6324
    • 1000 $0.53032
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    SMW5100RJT Digi-Reel 2,489 1
    • 1 $1.76
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    SMW5100RJT Reel 1,500 500
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    Mouser Electronics SMW5100RJT 1,882
    • 1 $1.1
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    Newark SMW5100RJT Cut Tape 1,250 1
    • 1 $1.03
    • 10 $0.763
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    SMW5100RJT Reel 1,000
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    Bristol Electronics SMW5100RJT 125
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    Avnet Abacus SMW5100RJT 16 Weeks 1,000
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    TE Connectivity SQMW5100RJ

    RES 100 OHM 5% 5W RADIAL
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    DigiKey SQMW5100RJ Bulk 926 1
    • 1 $0.76
    • 10 $0.598
    • 100 $0.4016
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    • 10000 $0.23413
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    Mouser Electronics SQMW5100RJ 922
    • 1 $0.56
    • 10 $0.416
    • 100 $0.36
    • 1000 $0.247
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    Newark SQMW5100RJ Bulk 1,721 1
    • 1 $0.711
    • 10 $0.56
    • 100 $0.375
    • 1000 $0.237
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    Avnet Abacus SQMW5100RJ 16 Weeks 1,000
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    Chip1Stop SQMW5100RJ 3
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    IBS Electronics SQMW5100RJ 3 2,223
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    Master Electronics SQMW5100RJ 501
    • 1 $0.3352
    • 10 $0.3352
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    • 1000 $0.2464
    • 10000 $0.2261
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    KEMET Corporation R75MW51004030J

    CAP FILM 10UF 5% 400VDC RADIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey R75MW51004030J Bulk 403 1
    • 1 $7.47
    • 10 $5.154
    • 100 $7.47
    • 1000 $3.42131
    • 10000 $3.09882
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    Mouser Electronics R75MW51004030J 311
    • 1 $6.2
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    Newark R75MW51004030J Bulk 1
    • 1 $4.54
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    TME R75MW51004030J 21 1
    • 1 $6
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    Find more MW510 price and stock on Findchips.com

    MW510 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TIM7179-16

    Abstract: No abstract text available
    Text: TOSHIBA TIM7179-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally matched • Hermetically sealed package


    Original     		PDF TIM7179-16 2-16G1B) MW51020196 TIM7179-16

    TIM7785-7L

    Abstract: No abstract text available
    Text: TOSHIBA TIM7785-7L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 28.5 dBm, - Single carrier level • High power - P1dB = 38.5 dBm at 7.7 GHz to 8.5 GHz


    Original     		PDF TIM7785-7L 2-11D1B) MW51060196 TIM7785-7 TIM7785-7L

    TIM7785-8

    Abstract: No abstract text available
    Text: TOSHIBA TIM7785-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 5.5 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package


    Original     		PDF TIM7785-8 2-11D1B) MW51070196 TIM7785-8

    TIM7179-16L

    Abstract: No abstract text available
    Text: TOSHIBA TIM7179-16L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42 dBm at 7.1 GHz to 7.9 GHz


    Original     		PDF TIM7179-16L 2-16G1B) MW51030196 TIM7179-16L

    ks2000 cables pin serial diagram

    Abstract: twincat plc programming manual in BK7300 rs485 modbus connection beckhoff MODBUS CONNECTION modbus cable BC7300 KL9010 KL1012 mx508
    Text: MODBUS Bus Terminal Controller BC7300 Version: 1.5 Last change: 2006-11-06 Please note the following Target group This description is only intended for the use of trained specialists in control and automation engineering who are familiar with the applicable national


    Original     		PDF BC7300 ks2000 cables pin serial diagram twincat plc programming manual in BK7300 rs485 modbus connection beckhoff MODBUS CONNECTION modbus cable BC7300 KL9010 KL1012 mx508

    IEC1131-3

    Abstract: bc7300 KS2000 ks2000 kabel Lesen Sie mehr!
    Text: MODBUS Busklemmen Controller BC7300 Version: 1.5 Letzte Änderung: 06.11.06 Bitte beachten Sie folgende Hinweise Zielgruppe Diese Beschreibung wendet sich ausschließlich an ausgebildetes Fachpersonal der Steuerungs- und Automatisierungstechnik, die mit den geltenden nationalen Normen vertraut sind.


    Original     		PDF BC7300 IEC1131-3 bc7300 KS2000 ks2000 kabel Lesen Sie mehr!

    twincat plc programming manual in

    Abstract: 16f020 SMALL ELECTRONICS PROJECTS in plc KL9010 C1220 IEC61131-3 Z1000 Z1100 KL1002 PLC PROGRAM beckhoff
    Text: LIGHTBUS Bus Terminal Controller BC2000 Technical Documentation Version 1.1 2006-11-06 Please note the following Target group This description is only intended for the use of trained specialists in control and automation engineering who are familiar with the applicable national


    Original     		PDF BC2000 twincat plc programming manual in 16f020 SMALL ELECTRONICS PROJECTS in plc KL9010 C1220 IEC61131-3 Z1000 Z1100 KL1002 PLC PROGRAM beckhoff

    TIM7785-4

    Abstract: No abstract text available
    Text: TOSHIBA TIM7785-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 6.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package


    Original     		PDF TIM7785-4 2-11D1B) MW51040196 TIM7785-4

    TIM7785-4SL

    Abstract: No abstract text available
    Text: TOSHIBA TIM7785-4SL MICROWAVE POWER GaAs FET PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25.5 dBm, Single Carrier Level • High power - P1dB = 36.5 dBm at 7.7 GHz to 8.5 GHz


    Original     		PDF TIM7785-4SL 2-11D1B) MW51050196 TIM7785-4SL

    MW5108

    Abstract: TIM7785-8L
    Text: TOSHIBA TIM7785-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 7.7 GHz to 8.5 GHz • High gain


    Original     		PDF TIM7785-8L 2-11D1B) MW51080196 TIM7785-8L MW5108

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 2 5 .5 d B m , Single Carrier Level • High po w e r


    OCR Scan     		PDF TIM7785-4SL MW51050196 7785-4SL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM7179-16 MW51020196 TIM7179-16

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TIM7785-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 28 dBm, - Single carrier level • H i g h power - P-|dB = 39 dBm at 7.7 GHz to 8.5 GHz


    OCR Scan     		PDF TIM7785-8L MW51080196 TIM7785-8L

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 36.0 dBm at 7.7 GHz to 8.5 GHz • High gain - G 1dB = 6.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM7785-4 MW51040196 TIM7785-4

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, Single Carrier Level • High power - P1dB = 39.5 dBm at 7.7 GHz to 8.5 GHz


    OCR Scan     		PDF TIM7785-8SL TCH7250 TIM7785-8SL MW51090196 TGT725D DG227D4

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power * P-idB = 42 dBm at 7.1 GHz to 7.9 GHz


    OCR Scan     		PDF TIM7179-16L MW51030196 DD22SÃ TIM7179-16L T0T7250 00225A4

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25.5 dBm, Single Carrier Level • High power - P-idB = 36.5 dBm at 7.7 GHz to 8.5 GHz


    OCR Scan     		PDF TIM7785-4SL 0022bfl3 TIM7785-4SL MW51050196 10172SG

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM 7785-8 Internally Matched Power GaAs FETs C-Band Features • High power - P-iob = 39 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 5.5 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package


    OCR Scan     		PDF MW51070196 1M725G TIM7785-8 TIM7785-8

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 39 dBm at 7.7 GHz to 8.5 GHz • High gain - G 1dB = 5.5 dB at 7.7 GHz to 8.5 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM7785-8 MW51070196 TIM7785-8

    MW5108

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -44 d B c a t Po = 28 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 39 d B m a t 7.7 G H z to 8.5 G H z


    OCR Scan     		PDF TIM7785-8L MW51080196 7785-8L MW5108

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m , Single Carrier Level • High po w e r


    OCR Scan     		PDF TIM7785-8SL MW51090196 7785-8SL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-14L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 41.5 dBm at 7.1 GHz to 7.9 GHz


    OCR Scan     		PDF TIM7179-14L 2-16G1B) MW51010196 DG22573

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16 Internally Matched Power GaAs FETs C-Band Features • High power - PidB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM7179-16 TIM7179-16 MW51020196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM 7785-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 28.5 dBm, - Single carrier level • H i g h power - P-|dB = 38.5 dBm at 7.7 G H z to 8.5 GHz


    OCR Scan     		PDF 7785-7L 785-7L TIM7785-7 MW51060196 22bfic