tim6472
Abstract: TIM6472-16L
Text: TOSHIBA TIM6472-16L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42.5 dBm at 6.4 GHz to 7.2 GHz
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TIM6472-16L
2-16G1B)
MW50930196
TIM6472-16L
tim6472
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 3 1 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 4 2 .5 d B m at 6.4 G H z to 7.2 G H z
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OCR Scan
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PDF
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TIM6472-16L
MW50930196
TIM6472-16L
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42.5 dBm at 6.4 GHz to 7.2 GHz
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OCR Scan
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PDF
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TIM6472-16L
MW50930196
D022S3G
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