MW504
Abstract: MW500 Power 33
Text: MW504 VCOS FOR WLL HANDSET APPLICATIONS SPECIFICATIONS Frequency Range: 2400 MHz @ 0.5V 2500 MHz @ 2.5V Tuning Sensitivity: <1.5:1 MHz/V Supply Voltage: +3V Phase Noise: @10 kHz: ≤-97 dBc/Hz @100 kHz: ≤-117 dBc/Hz Supply Current: <20 mA Harmonic Suppression:
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MW504
MW500
Power 33
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TIM3742-16L
Abstract: No abstract text available
Text: TOSHIBA TIM3742-16L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42.5 dBm at 3.7 GHz to 4.2 GHz
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TIM3742-16L
2-16G1B)
MW50470196
TIM3742-16L
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TIM4450-4
Abstract: TPM4450-4
Text: TOSHIBA TIM4450-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 4.4 GHz to 5.0 GHz • High gain - G1dB = 10.0 dB at 4.4 GHz to 5.0 GHz • Broad band internally matched • Hermetically sealed package
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TIM4450-4
2-11D1B)
MW50490196
TPM4450-4
TIM4450-4
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TIM1415-8
Abstract: No abstract text available
Text: TOSHIBA TIM1415-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G1dB = 4.5 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally Matched • Hermetically sealed package
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TIM1415-8
2-11C1B)
MW50410196
TIM1415-8
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TIM3742-16
Abstract: TPM3742-16
Text: TOSHIBA TIM3742-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 3.7 GHz to 4.2 GHz • High gain - G1dB = 9.5 dB at 3.7 GHz to 4.2 GHz • Broad band internally matched • Hermetically sealed package
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TIM3742-16
2-16G1B)
MW50460196
TPM3742-16
TIM3742-16
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TPM3742-8
Abstract: TIM3742-8
Text: TOSHIBA TIM3742-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39.0 dBm at 3.7 GHz to 4.2 GHz • High gain - G1dB = 10.0 dB at 3.7 GHz to 4.2 GHz • Broad band internally matched • Hermetically sealed package
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TIM3742-8
2-11D1B)
MW50440196
TPM3742-8
TIM3742-8
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TIM3742-8L
Abstract: No abstract text available
Text: TOSHIBA TIM3742-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 3.7 GHz to 4.2 GHz • High gain
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TIM3742-8L
2-11D1B)
MW50450196
TIM3742-8L
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TPM3742-4
Abstract: TIM3742-4
Text: TOSHIBA TIM3742-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 3.7 GHz to 4.2 GHz • High gain - G1dB = 10.5 dB at 3.7 GHz to 4.2 GHz • Broad band internally matched • Hermetically sealed package
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TIM3742-4
2-11D1B)
MW50420196
TPM3742-4
TIM3742-4
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TIM1415-4
Abstract: No abstract text available
Text: TOSHIBA TIM1415-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G1dB = 5.5 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally Matched • Hermetically sealed package
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TIM1415-4
MW50400196
TIM1415-4
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TIM3742-30L
Abstract: No abstract text available
Text: TOSHIBA TIM3742-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power - P1dB = 45 dBm at 3.7 GHz to 4.2 GHz
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TIM3742-30L
2-16G1B)
MW50480196
TIM3742-30L
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TIM3742-4L
Abstract: No abstract text available
Text: TOSHIBA TIM3742-4L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P1dB = 36 dBm at 3.7 GHz to 4.2 GHz • High gain
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TIM3742-4L
2-11D1B)
MW50430196
TIM3742-4L
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 25 dBm, - Single carrier level • High power - P1dB = 36 dBm at 3.7 GHz to 4.2 GHz
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TIM3742-4L
MW50430196
3742-4L
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -44 d B c at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42.5 dBm at 3.7 GHz to 4.2 GHz
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TIM3742-16L
TIM3742-161Power
MW50470196
TIM3742-16L
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 34.5 dBm, - Single carrier level • High power • P-idB = 45 dBm at 3.7 GHz to 4.2 GHz
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TIM3742-30L
95GHz
MW50480196
TIM3742-30L
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1415-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G 1dB = 5.5 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally M atched • H erm etically sealed package
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TIM1415-4
MW50400196
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-16 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 3.7 GHz to 4.2 GHz • High gain - G 1dB = 9.5 dB at 3.7 GHz to 4.2 GHz • Broad band internally m atched • H erm etically sealed package
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TIM3742-16
MW50460196
TPM3742-16
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - I M 3 = -45 d B c at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 3.7 GHz to 4.2 GHz
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TIM3742-8L
MW50450196
3742-8L
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 3.7 GHz to 4.2 GHz • High gain - G 1dB = 10.5 dB at 3.7 GHz to 4.2 GHz • Broad band internally m atched • H erm etically sealed package
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TIM3742-4
MW50420196
TPM3742-4
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 25 dBm, - Single carrier level • High power - P1dB = 36 dBm at 3.7 GHz to 4.2 GHz
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TIM3742-4L
MW50430196
TIM3742-4L
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JE 33
Abstract: No abstract text available
Text: TOSHIBA TIM1415-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G 1dB = 4.5 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally M atched • H erm etically sealed package
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OCR Scan
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TIM1415-8
2-11C1B)
MW50410196
JE 33
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-8 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39.0 dBm at 3.7 GHz to 4.2 GHz • High gain - G 1dB = 10.0 dB at 3.7 GHz to 4.2 GHz • Broad band internally m atched • H erm etically sealed package
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OCR Scan
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TIM3742-8
MW50440196
TPM3742-8
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 31.5 dBm, - Single carrier level • High power - P-idB = 42.5 dBm at 3.7 GHz to 4.2 GHz
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TIM3742-16L
MW50470196
TCH725G
223SQ
TIM3742-16L
GG22351
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level •H ig h power - P idB = 36 dBm at 3.7 GHz to 4.2 GHz
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TIM3742-4L
95GHz
MW50430196
TIM3742-4L
DG223bl
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - PidB = 39 dBm at 3.7 GHz to 4.2 GHz • High gain
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TIM3742-8L
MW50450196
TIM3742-8L
TGT72S0
00223LL
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