TIM1414-10L
Abstract: No abstract text available
Text: TOSHIBA TIM1414-10L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, - Single carrier level • High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz
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TIM1414-10L
2-11C1B)
MW50350196
TIM1414-10L
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SI 1360 H
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-10L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low interm odulation distortion - IM 3 = -45 d B c at Po = 29.0 dBm, - Single carrier level • High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz
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PDF
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TIM1414-10L
MW50350196
SI 1360 H
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-10LA Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level • High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz
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OCR Scan
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TIM1414-10LA
Inte80
MW50350196
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