| TIM1414-10L |
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Toshiba
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Low Distortion Internally Matched Power GaAs FET (X, Ku-Band) |
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| TIM1414-10L |
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Toshiba
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TIM1414 - TRANSISTOR RF POWER, FET, 2-11C1B, 3 PIN, FET RF Power |
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| TIM1414-10LA |
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Toshiba
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FET, Microwave Power GaAs FET Transistor, ID 11.5 A |
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Original |
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| TIM1414-10LA |
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Toshiba
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TIM1414 - TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power |
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Original |
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| TIM1414-10LA-252 |
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Toshiba
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X and Ku-Band Power GaAs IMFETS; Frequency Band (GHz): 13.75-14.5; P1dB (dBm): 39.5; G1dB (dB): 5.5; Ids (A) Typ.: 4; IM3 (dBc) Typ.: -45; Package Type: 2; Rth (°C/W) Typ.: 2-11C1B |
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Original |
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| TIM1414-10LA-252 |
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Toshiba
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FET, Microwave Power Gaas FET |
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Original |
PDF
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| TIM1414-10LA-252 |
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Toshiba
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FET |
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Original |
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