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    MV-03 DIODE Search Results

    MV-03 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    MV-03 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VK 1760

    Abstract: V0017600 VK-1760 VK1760 VK-1763 VK 1760 H VK-1760H 1760H DA am/P55/SCKB2/RTP05/display 7 segment smd widerstand Roh
    Text: EA VK-1760/63 03/97 3½-ST. DVM 5V/9V, SUPERFLACH, MIT DIMENSIONSANGABEN Abmessungen 60 x 38 mm TECHNISCHE DATEN * * * * * * * * * * * 3½-ST. KONTRASTREICHE 7 SEGMENTANZEIGE MIT 12.7mm ZIFFERN DEZIMALPUNKTE U. DIMENSIONSANGABEN IM DISPLAY °C, mV, µA, .


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    PDF VK-1760/63 200mV, VK-1763: 0MB-10 VK-1760H VK-1760H) VK-1760 VK-1763 VK 1760 V0017600 VK1760 VK-1763 VK 1760 H VK-1760H 1760H DA am/P55/SCKB2/RTP05/display 7 segment smd widerstand Roh

    6990a

    Abstract: capacitor 220uF 50v 35MV220AX MAX8546EUB capacitor c1 220uF DO3340P-153 FDS6990A LMK212BJ225MG MAX8546 fds mosfet
    Text: 18V to 20V VIN C2 0.1uF C3 2.2uF 10V 4 D2 CMPSH-3 3 VCC 5 VL BST IN D1 CMPSH-3 R1 220k U1 MAX8546 1 COMP DH C4 0.1uF 8 GND FB R2 2.2 N1 1/2 FDS 6990A 6 7 2 12V@4A VOUT C7 220uF 35V MV-AX 2x R3 140k R4 10.0k 8546_12b RWY 10/07/03 Vin 19.009 18.00 19.02 20.03


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    PDF MAX8546 220uF 20MHz DO3340P 20mVpp LMK212BJ225MG 220uF 35MV220AX 100mA 6990a capacitor 220uF 50v 35MV220AX MAX8546EUB capacitor c1 220uF DO3340P-153 FDS6990A LMK212BJ225MG MAX8546 fds mosfet

    of capacitor 470uf 16v

    Abstract: 470uf capacitor 470uf 16v 470uf, 16v electrolytic capacitor 470uF 10v capacitor 9956A description of capacitor 470uf 16v resistor 220k 470uF capacitor capacitor 470uF
    Text: Cable modem 10.5V to 13.5V INPUT C2 0.1uF C3 2.2uF 10V 4 R1 220k C1 1nF 1 D1 CMPSH-3 3 VCC 5 VL BST IN COMP U1 MAX1967 DH LX DL GND FB 10 9 C4 0.1uF N1 1/2 NDS 9956A 8 L1 47uH PCV-0473-03 N1 1/2 NDS 9956A 6 7 3.3V@0.75A C6 470uF 6V MV-AX R2 31.6k 2 R3 10.0k


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    PDF MAX1967 PCV-0473-03 470uF 50mVpp LMK212BJ225MG 470uF 16MV470AX 6MV470AX of capacitor 470uf 16v capacitor 470uf 16v 470uf, 16v electrolytic capacitor 470uF 10v capacitor 9956A description of capacitor 470uf 16v resistor 220k 470uF capacitor capacitor 470uF

    0805 X7R 104 0.1UF

    Abstract: capacitor 220uF 50v 0805 104 50v 10C4 DO3340P-333 MAX8546EUB capacitor c1 220uF FDS6930A LMK212BJ225MG MAX8546
    Text: 18V to 24V VIN C2 0.1uF C3 2.2uF 10V 4 3 VCC 5 VL BST IN D1 CMPSH-3 R1 220k U1 MAX8546 1 COMP DH 10 C4 0.1uF 8 GND FB R2 2.2 N1 1/2 FDS 6930A 6 7 2 C6 1uF 50V X7R L1 33uH DO3340P -333 12V@2A VOUT C7 220uF 35V MV-AX R3 140k R4 10.0k 8546_12c RWY 10/07/03 Vin


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    PDF MAX8546 DO3340P 220uF 20MHz 30mVpp LMK212BJ225MG 220uF 35MV220AX 100mA 0805 X7R 104 0.1UF capacitor 220uF 50v 0805 104 50v 10C4 DO3340P-333 MAX8546EUB capacitor c1 220uF FDS6930A LMK212BJ225MG MAX8546

    MO-220

    Abstract: AN0017 CHE1270 CHE1270-QAG esd protection smd
    Text: CHE1270-QAG RoHS COMPLIANT 5-44GHz Detector GaAs Monolithic Microwave IC in SMD leadless package Description The CHE1270-QAG is a detector that integrates a matched detector diode Vdet and a reference diode (Vref). It is designed for a wide range of applications


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    PDF CHE1270-QAG 5-44GHz CHE1270-QAG E1270 CHE1270 5-44GHz DSCHE1270-QAG0329 MO-220 AN0017 CHE1270 esd protection smd

    marking code PH 817

    Abstract: Schottky SOD87 PH 48 marking code 819ph sod87 dimension datasheet SOD87 marking code prll5817 SOD87 SOD87 marking code 7 PRLL5819
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D121 PRLL5817; PRLL5818; PRLL5819 Schottky barrier diodes Product specification Supersedes data of November 1993 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification


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    PDF M3D121 PRLL5817; PRLL5818; PRLL5819 MAM190 PRLL5817 PRLL5819 marking code PH 817 Schottky SOD87 PH 48 marking code 819ph sod87 dimension datasheet SOD87 marking code SOD87 SOD87 marking code 7

    marking code PH 817

    Abstract: 819PH PRLL5819 smd marking code PH SOD87 marking code M3D121 PRLL5817 PRLL5818 PRLL817 SOD87 marking code 7
    Text: DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D121 PRLL5817; PRLL5818; PRLL5819 Schottky barrier diodes Product specification Supersedes data of November 1993 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification Schottky barrier diodes


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    PDF M3D121 PRLL5817; PRLL5818; PRLL5819 MAM190 PRLL5817 PRLL5819 marking code PH 817 819PH smd marking code PH SOD87 marking code M3D121 PRLL5818 PRLL817 SOD87 marking code 7

    1N4150

    Abstract: 1N4151 1N4150 Philips 1N4153 MAM246
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N4150; 1N4151; 1N4153 High-speed diodes Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes 1N4150; 1N4151; 1N4153


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    PDF M3D176 1N4150; 1N4151; 1N4153 DO-35) 1N4150, 1N4151, 1N4150 1N4151 1N4150 Philips 1N4153 MAM246

    7297

    Abstract: CHE1270
    Text: CHE1270 RoHS COMPLIANT 12-40GHz Wide Band Detector GaAs Monolithic Microwave IC Description The CHE1270 is a detector that integrates a matched detection diode Vdet . A reference diode is also available to be used in differential mode (Vref). DC CHE1270 RF_in


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    PDF CHE1270 12-40GHz CHE1270 12-40GHz DSCHE1270-7297 7297

    1N5819

    Abstract: 1N5817 1N5818 datasheets diode 1n5818 1N817 1N5817 Philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817; 1N5818; 1N5819 Schottky barrier diodes Product specification Supersedes data of April 1992 1996 May 03 Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 FEATURES


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    PDF M3D119 1N5817; 1N5818; 1N5819 1N5817 1N5819 1N5818 datasheets diode 1n5818 1N817 1N5817 Philips

    CHE1260

    Abstract: Microwave detector diodes 18 GHz
    Text: CHE1260 RoHS COMPLIANT 10-27GHz Bidirectionnal Detector GaAs Monolithic Microwave IC Description The CHE1260 is a bidirectionnal detector that integrates a passive bidirectionnal coupler, two matched detection diodes and two reference diodes. Vref_R DC_R It allows the measurement of transmitted


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    PDF CHE1260 10-27GHz CHE1260 10GHz DSCHE1260-8163 Microwave detector diodes 18 GHz

    CHE1260

    Abstract: No abstract text available
    Text: CHE1260 RoHS COMPLIANT 10-27GHz Bidirectionnal Detector GaAs Monolithic Microwave IC Description The CHE1260 is a bidirectionnal detector that integrates a passive bidirectionnal coupler, two matched detection diodes and two reference diodes. Vref_R DC_R It allows the measurement of transmitted and


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    PDF CHE1260 10-27GHz CHE1260 10GHz DSCHE1260-8163

    Untitled

    Abstract: No abstract text available
    Text: CHE1270a RoHS COMPLIANT 12-40GHz Wide Band Detector GaAs Monolithic Microwave IC Description The CHE1270a is a detector that integrates a matched detection diode Vdet . A reference diode is also available to be used in differential mode (Vref). RF IN Matching


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    PDF CHE1270a 12-40GHz CHE1270a 12-40GHz DSCHE1270a8205

    CHE1270a98F

    Abstract: gold detector IC CHE1270A
    Text: CHE1270a98F RoHS COMPLIANT 5-44GHz Detector GaAs Monolithic Microwave IC Description The CHE1270a is a detector that integrates a matched detection diode Vdet . A reference diode is also available to be used in differential mode (Vref). It is designed for a wide range of applications


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    PDF CHE1270a98F 5-44GHz CHE1270a 5-44GHz DSCH1270a0327 CHE1270a98F gold detector IC

    CD 51 rf detector

    Abstract: CHE1260
    Text: CHE1260 RoHS COMPLIANT 10-27GHz Bidirectionnal Detector GaAs Monolithic Microwave IC Description The CHE1260 is a bidirectionnal detector that integrates a passive bidirectionnal coupler, two matched detection diodes and two reference diodes. Vref_R DC_R It allows the measurement of transmitted and


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    PDF CHE1260 10-27GHz CHE1260 DSCHE1260-8058 CD 51 rf detector

    CHE1270a98F

    Abstract: No abstract text available
    Text: CHE1270a RoHS COMPLIANT 12-40GHz Wide Band Detector GaAs Monolithic Microwave IC Description The CHE1270a is a detector that integrates a matched detection diode Vdet . A reference diode is also available to be used in differential mode (Vref). RF IN Matching


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    PDF CHE1270a 12-40GHz CHE1270a 17GHz 22GHz 32GHz 12-40GHz DSCHE1270a9222 CHE1270a98F

    MA4E1245KE

    Abstract: MA4E1245KA MA4E1245KB 350AT S11 SCHOTTKY diode 20/Molectron Detector J100 MA4E1245 transistor schottky model spice microwave diode
    Text: Surface Mount Low Barrier X-Band Schottky Diodes MA4E1245 Series V3.00 SOT-23 Features ● ● ● ● ● ● ● Designed for High Volume Low Cost Detector and Mixer Applications Low Noise Figure: 5.7 dB SSB at X-Band High Detector Sensitivity: -55 dBm TSS


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    PDF MA4E1245 OT-23 -j100 MA4E1245KE MA4E1245KA MA4E1245KB 350AT S11 SCHOTTKY diode 20/Molectron Detector J100 transistor schottky model spice microwave diode

    1N5819

    Abstract: 1N817 1N5817 datasheets diode 1n5818 1N5818 1N5819 Diodes MBG432 1n5819 philips MBG435 Philips applications
    Text: DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817; 1N5818; 1N5819 Schottky barrier diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification Schottky barrier diodes


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    PDF M3D119 1N5817; 1N5818; 1N5819 1N5817 1N5819 1N817 datasheets diode 1n5818 1N5818 1N5819 Diodes MBG432 1n5819 philips MBG435 Philips applications

    27K resistor datasheet

    Abstract: CHE1270a98F
    Text: CHE1270a RoHS COMPLIANT 10-44GHz Wide Band Detector GaAs Monolithic Microwave IC Description RF IN Matching The CHE1270a is a detector that integrates a matched detection diode Vdet . A reference diode is also available to be used in differential mode (Vref).


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    PDF CHE1270a 10-44GHz CHE1270a 10GHz 10-44GHz DSCHE1270a0158 27K resistor datasheet CHE1270a98F

    AN0017

    Abstract: CHE1270 CHE1270-QAG MO-220
    Text: CHE1270-QAG RoHS COMPLIANT 12-40GHz Wide Band Detector GaAs Monolithic Microwave IC in SMD leadless package Description UMS E1270 YYWW The CHE1270-QAG is a detector that integrates a matched detector diode Vdet and a reference diode (Vref). It is designed for a wide range of applications


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    PDF CHE1270-QAG 12-40GHz E1270 CHE1270-QAG CHE1270 16L-QFN3x3 DSCHE1270-QAG8205 AN0017 CHE1270 MO-220

    CHE1270

    Abstract: CHE1270-QAG MO-220 AN0017
    Text: CHE1270-QAG RoHS COMPLIANT 10-44GHz Wide Band Detector GaAs Monolithic Microwave IC in SMD leadless package Description UMS E1270 YYWW The CHE1270-QAG is a detector that integrates a matched detector diode Vdet and a reference diode (Vref). It is designed for a wide range of applications


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    PDF CHE1270-QAG 10-44GHz E1270 CHE1270-QAG CHE1270 10GHz 12GHz 17GHz 27GHz 32GHz CHE1270 MO-220 AN0017

    1N4565A

    Abstract: 1N4570A JANTX 1N4565 1n4574a MIL-PRF-19500 452 JANTX1N4569AUR-1 1N4584 1N4584A-1 DO-213AA JANTX1N4574A-1
    Text: 1N4565 thru 1N4584A-1 DO-7 6.4 Volt Temperature Compensated Zener Reference Diodes SCOTTSDALE DIVISION APPEARANCE The popular 1N4565 thru 1N4584A-1 series of Zero-TC Reference Diodes provides a selection of both 6.4 V nominal voltages and temperature coefficients to as low as 0.0005%/oC for minimal voltage change with


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    PDF 1N4565 1N4584A-1 DO-204AA) 1N4575 1N4579A 1N4580 1N4565A 1N4570A JANTX 1n4574a MIL-PRF-19500 452 JANTX1N4569AUR-1 1N4584 DO-213AA JANTX1N4574A-1

    1N4150

    Abstract: 1N4153 1N4153-1 1N4151
    Text: Philips Semiconductors Product specification High-speed diodes 1N4150; 1N4151; 1N4153 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The 1N4150,1N 4151, 1N4153 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically seated leaded glass


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    PDF 1N4150; 1N4151; 1N4153 1N4150 1N4151, 1N4153 DO-35) 1N4150: 1N4151 1N4153-1

    1N817

    Abstract: 1N5817 1N5819 1n5819 data sheet 1N5819 package data sheet for 1N5817 DIODE 1N5819 dc 1N5818 1N5817 Philips
    Text: Philips Semiconductors Product specification S ch o ttky b arrier dio des 1N 5817; 1 N 5 818; 1N 5819 FEATURES DESCRIPTION • Low switching losses The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages


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    PDF 1N5817; 1N5818; 1N5819 1N5817 1N5819 711DfiSb 7110fl2b 1N817 1n5819 data sheet 1N5819 package data sheet for 1N5817 DIODE 1N5819 dc 1N5818 1N5817 Philips