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    MUR 460 GENERAL Search Results

    MUR 460 GENERAL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    MUR 460 GENERAL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SANGDEST MICROELECTRONICS MUR460AX Technical Data Data Sheet N0139 Rev. - Green Products MUR460AX ULTRAFAST RECTIFIERS Applications: • • • Switching Power Supply Power Switching Circuits General Purpose Features: • • • • • • • • • Glass Passivated Die Construction


    Original     		PDF N0139 MUR460AX MUR460AX DO-201AD

    murf1060ct

    Abstract: No abstract text available
    Text: SANGDEST MICROELECTRONICS MURF1060CT Technical Data Data Sheet N0237, Rev. - Green Products MURF1060CT ULTRAFAST PLASTIC RECTIFIER Applications: • • • Switching Power Supply Power Switching Circuits General Purpose Features: • • • • • • •


    Original     		PDF MURF1060CT N0237, MURF1060CT

    MUR360AX

    Abstract: No abstract text available
    Text: SANGDEST MICROELECTRONICS MUR360AX Technical Data Data Sheet N0261, Rev. - Green Products MUR360AX ULTRAFAST PLASTIC RECTIFIER Applications: • • • Switching Power Supply Power Switching Circuits General Purpose Features: • • • • • • • •


    Original     		PDF MUR360AX N0261, MUR360AX DO-201AD

    Untitled

    Abstract: No abstract text available
    Text: SANGDEST MICROELECTRONICS MURB1060CT Technical Data Data Sheet N0327, Rev. - Green Products MURB1060CT ULTRAFAST PLASTIC RECTIFIER Applications: • • • Switching Power Supply Power Switching Circuits General Purpose Features: • • • • • • •


    Original     		PDF MURB1060CT N0327, MURB1060CT

    FUR460

    Abstract: GUR460 UF4007 SMD Spice UF5408 MUR Motorola fast diode UF5400 "spice model" uf5408 SMD diode SMA UF4007 GENERAL SEMICONDUCTOR SMD DIODES mur 460 data
    Text: N E GUR440 & GUR460 MUR440 & MUR460 Ultrafast Axial-Leaded Rectifiers W P R O New Four Ampere Axial Introduction GUR460 Features Cross Reference GUR460 Applications Ultrafast Recovery FER Selector Chart Spice Model Parameters D U To view the datasheets please click here ➔


    Original     		PDF GUR440 GUR460 MUR440 MUR460 GUR460 GUR440, GUR460, MUR440 MUR460. FUR460 UF4007 SMD Spice UF5408 MUR Motorola fast diode UF5400 "spice model" uf5408 SMD diode SMA UF4007 GENERAL SEMICONDUCTOR SMD DIODES mur 460 data

    EVAL-AD1871EB

    Abstract: AD1871 capxx sharc ADSP-21xxx ADSP21XXX SHARC PROCESSOR AD1871YRS AD1871YRS-REEL sharc ADSP-21xxx general block diagram
    Text: a Stereo Audio, 24-Bit, 96 kHz, Multibit ⌺-⌬ ADC AD1871 FEATURES 5.0 V Stereo Audio ADC with 3.3 V Tolerant Digital Interface Supports 96 kHz Sample Rates Supports 16-/20-/24-Bit Word Lengths Multibit Sigma-Delta Modulators with “Perfect Differential Linearity Restoration” for


    Original     		PDF 24-Bit, AD1871 16-/20-/24-Bit 28-Lead RS-28) MO-150AH C02644 EVAL-AD1871EB AD1871 capxx sharc ADSP-21xxx ADSP21XXX SHARC PROCESSOR AD1871YRS AD1871YRS-REEL sharc ADSP-21xxx general block diagram

    AD1871

    Abstract: No abstract text available
    Text: Stereo Audio, 24-Bit, 96 kHz, Multibit ⌺-⌬ ADC AD1871 a FEATURES 5.0 V Stereo Audio ADC with 3.3 V Tolerant Digital Interface Supports 96 kHz Sample Rates Supports 16-/20-/24-Bit Word Lengths Multibit Sigma-Delta Modulators with “Perfect Differential Linearity Restoration” for


    Original     		PDF 24-Bit, AD1871 16-/20-/24-Bit 28-Lead MO-150AH C02644â AD1871

    D101-03

    Abstract: BSC24 series RESISTOR capacitor NETWORK
    Text: FEATURES Wide input range: 2.75 V to 20 V Power stage input voltage: 1 V to 20 V Output voltage range: 0.6 V up to 90% VIN Linear dropout LDO regulator with a fixed output 1.5 V at 150 mA Output current more than 25 A per channel 180º phase shift between channels for reduced input


    Original     		PDF ADP1876 MO-220-WHHD. 32-Lead CP-32-11) ADP1876ACPZ-R7 ADP1876-EVALZ CP-32-11 D10103-0-11/11 12408-A D101-03 BSC24 series RESISTOR capacitor NETWORK

    series RESISTOR capacitor NETWORK

    Abstract: switching high side mosfet
    Text: FEATURES Wide input range: 2.75 V to 20 V Power stage input voltage: 1 V to 20 V Output voltage range: 0.6 V up to 90% VIN Linear dropout LDO regulator with a fixed output 1.5 V at 150 mA Output current more than 25 A per channel 180º phase shift between channels for reduced input


    Original     		PDF ADP1876 MO-220-WHHD. 32-Lead CP-32-11) ADP1876ACPZ-R7 CP-32-11 D10103-0-9/11 com/ADP1876 12408-A series RESISTOR capacitor NETWORK switching high side mosfet

    Untitled

    Abstract: No abstract text available
    Text: FEATURES Wide input range: 2.75 V to 20 V Power stage input voltage: 1 V to 20 V Output voltage range: 0.6 V up to 90% VIN Linear dropout LDO regulator with a fixed output 1.5 V at 150 mA Output current more than 25 A per channel 180º phase shift between channels for reduced input


    Original     		PDF 32-lead, MO-220-WHHD. 12408-A 32-Lead CP-32-11) ADP1876ACPZ-R7 ADP1876-EVALZ D10103-0-11/11 CP-32-11

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    A14F diode

    Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
    Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		PDF MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    transistor U1620R

    Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
    Text: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave


    Original     		PDF MUR1620CTR MUR1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 transistor U1620R fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		PDF MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360

    microprocessor Rockwell 6502

    Abstract: microprocessor Rockwell R6500 R6504 Rockwell 6502 4cmp CPU R6502 R6502a
    Text: R650X • R651X R650X and R651X Microprocessors CPU Rockwell DESCRIPTION FEATURES The 8-bit R6500 microprocessor devices are produced with N-channel, silicon gate technology. Performance speeds are enhanced by advanced system architecture. This innovative


    OCR Scan     		PDF R650X R651X R650X R651X M6800 microprocessor Rockwell 6502 microprocessor Rockwell R6500 R6504 Rockwell 6502 4cmp CPU R6502 R6502a

    Untitled

    Abstract: No abstract text available
    Text: 19-1218; R e v 1 ,6 /9 7 V M y iX I V M Dual, High-Efficiency, PFM, Step-Up DC-DC C ontroller The device uses a current-lim ited, pulse-frequencymodulated PFM control architecture that reduces start­ up surge currents and maintains low quiescent currents


    OCR Scan     		PDF MAX863 16-pin MAX863,