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    MMDT3946

    Abstract: No abstract text available
    Text: MMDT3946 NPN / PNP Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” indicates halogen-free. SOT-363 FEATURE A E Complementary Pair One 3904-Type NPN One 3906-Type PNP Epitaxial Planer Die Construction Ideal for Low Power Amplification and Switching


    Original     		PDF MMDT3946 OT-363 3904-Type 3906-Type 15-Jun-2012 MMDT3946

    SMUN5211DW

    Abstract: Digital Transistor SMUN52XXDW SOT-363 marking 05 CHIP TRANSISTOR smun5235dw transistor marking 7D SMUN5214DW "two TRANSISTORs" sot-363
    Text: SMUN52XXDW NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are


    Original     		PDF SMUN52XXDW SMUN5211DW 22-Jun-2007 Digital Transistor SMUN52XXDW SOT-363 marking 05 CHIP TRANSISTOR smun5235dw transistor marking 7D SMUN5214DW "two TRANSISTORs" sot-363

    npn3904

    Abstract: NPN-3904 pnp3906 3906 PNP MMDT3946 3904 TRANSISTOR npn sot transistor 3906
    Text: MMDT3946 NPN / PNP Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” indicates halogen-free. FEATURE SOT-363 Complementary Pair One 3904-Type NPN One 3906-Type PNP Epitaxial Planer Die Construction Ideal for Low Power Amplification and Switching


    Original     		PDF MMDT3946 OT-363 3904-Type 3906-Type PNP3906 NPN3904 -10mA, 14-Apr-2010 npn3904 NPN-3904 pnp3906 3906 PNP MMDT3946 3904 TRANSISTOR npn sot transistor 3906

    Untitled

    Abstract: No abstract text available
    Text: MMDT3946 NPN / PNP Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product Dual General Purpose Transistor SOT-363 The MMDT3946 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363-6


    Original     		PDF MMDT3946 OT-363 MMDT3946 OT-23/SOT-323 OT-363-6 026TYP 65TYP) 021REF 01-Jan-2006

    MMDT2227

    Abstract: PNP2907 NPN2222A 1N914 PNP2907A MMDT2227 equivalent multichip bauelemente
    Text: MMDT2227 NPN-PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features o .055 1.40 .047(1.20) Power dissipation .026TYP (0.65TYP) PCM : 0.2 W (Tamp.= 25 C) O .021REF (0.525)REF Collector current ICM : 0.2/-0.2 A


    Original     		PDF MMDT2227 OT-363 026TYP 65TYP) 021REF 01-Jan-2006 MMDT2227 PNP2907 NPN2222A 1N914 PNP2907A MMDT2227 equivalent multichip bauelemente

    Untitled

    Abstract: No abstract text available
    Text: MMST3946 Multi-Chip Transistors NPN+PNP Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product FEATURES * * * * * * SOT-563 hFE, 100-300 Low VCE sat , 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Lead-Free Solder Plating


    Original     		PDF MMST3946 OT-563 -10mA 26-Apr-2007

    UMD2N

    Abstract: Digital Transistor npn-pnp CHIP TRANSISTOR transistor DTC124E npn-pnp symbol d2 transistor NPN/PNP transistor DTA124E
    Text: UMD2N NPN-PNP built-in resistors Multi-Chip Digital Transistor Elektronische Bauelemente SOT-363 o .055 1.40 .047(1.20) 8 o .026TYP (0.65TYP) Features .021REF (0.525)REF .053(1.35) .045(1.15) .096(2.45) .085(2.15) * DTA124E and DTC124E transistors are built-in a SOT-363 package.


    Original     		PDF OT-363 026TYP 65TYP) 021REF DTA124E DTC124E OT-363 01-Jan-2006 10mA/0 100MHz UMD2N Digital Transistor npn-pnp CHIP TRANSISTOR transistor npn-pnp symbol d2 transistor NPN/PNP transistor

    Untitled

    Abstract: No abstract text available
    Text: BC847PN NPN-PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 o .055 1.40 .047(1.20) 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features .053(1.35) .045(1.15) .096(2.45) .085(2.15) Power dissipation PCM : 0.2 W (Tamp.= 25 C)


    Original     		PDF BC847PN OT-363 026TYP 65TYP) 021REF 01-Jan-2006

    BC847PN

    Abstract: pnp transister symbol transister NPN TRANSISTER Tr2 transister 1A TRANSISTER chip transister marking B2 NPN/PNP transistor Silicon Transister
    Text: BC847PN NPN - PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 FEATURE       Epitaxial Die Construction Two internal isolated NPN/PNP transistors in one package Power Dissipation PCM : 0.2 W Temp. = 25˚C


    Original     		PDF BC847PN OT-363 -10mA, 100MHz 200Hz 20-Oct-2009 BC847PN pnp transister symbol transister NPN TRANSISTER Tr2 transister 1A TRANSISTER chip transister marking B2 NPN/PNP transistor Silicon Transister

    Untitled

    Abstract: No abstract text available
    Text: MMDT847 NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) * Features o 8 o .026TYP (0.65TYP) .021REF (0.525)REF Power dissipation .053(1.35) .045(1.15) .096(2.45) .085(2.15) PCM : 0.3 W (Temp.= 25 C)


    Original     		PDF MMDT847 OT-363 026TYP 65TYP) 021REF 01-Jan-2006 SC70-6

    BC847S

    Abstract: SC70-6
    Text: BC847S NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features .053(1.35) .045(1.15) .096(2.45) .085(2.15) Power dissipation PCM : 0.3 W (Tamp.= 25 C)


    Original     		PDF BC847S OT-363 026TYP 65TYP) 021REF 01-Jan-2006 SC70-6 BC847S SC70-6

    MMDT2907A

    Abstract: No abstract text available
    Text: MMDT2907A PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 A suffix of "-C" specifies halogen-free * Features .055 1.40 .047(1.20) o .026TYP (0.65TYP) 8 o .021REF (0.525)REF Power dissipation PCM : 0.15 W (Tamp.= 25 C)


    Original     		PDF MMDT2907A OT-363 026TYP 65TYP) 021REF 01-Jan-2007 MMDT2907A

    UMH15N

    Abstract: DTC144T transistor H15 marking H15 multi emitter transistor 003 SOT363
    Text: UMH15N NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) Features * Two DTC144T chips in a package o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Transistor elements are independent, eliminating interference.


    Original     		PDF UMH15N OT-363 DTC144T 026TYP 65TYP) 021REF 01-Jan-2006 100MHz UMH15N transistor H15 marking H15 multi emitter transistor 003 SOT363

    MMDT2222A

    Abstract: 1N914
    Text: MMDT2222A NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055 1.40 .047(1.20) 8 o .021REF (0.525)REF Power dissipation O Collector current : 0.6 A C1 B2 .018(0.46) .010(0.26) E2 .014(0.35) .006(0.15)


    Original     		PDF MMDT2222A OT-363 021REF 026TYP 65TYP) 01-Jan-2006 MMDT2222A 1N914

    MMDT5401

    Abstract: MMDT5551
    Text: MMDT5401 Plastic-Encapsulate Multi-Chip PNP+PNP Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055(1.40) .047(1.20) Features .021REF (0.525)REF * Epitaxial Planar Die Construction * Complementary NPN Type Available (MMDT5551) C2 B1


    Original     		PDF MMDT5401 OT-363 021REF MMDT5551) 026TYP 65TYP) -10mA, 100MHz 01-Jan-2006 MMDT5401 MMDT5551

    MMDT4401

    Abstract: No abstract text available
    Text: MMDT4401 NPN Plastic-Encapsulate Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product * Features SOT-363 .055 1.40 .047(1.20) : 0.2 W (Temp.=25 C) O .018(0.46) .010(0.26) : 0.6 A C2 Collector-Base vVoltage B1 E1 .014(0.35) .006(0.15) .006(0.15)


    Original     		PDF MMDT4401 OT-363 021REF 026ce 01-Jan-2006 100MHz 150mA MMDT4401

    MMDT4403

    Abstract: transistor EB 525
    Text: MMDT4403 PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055 1.40 .047(1.20) .021REF (0.525)REF Power dissipation. PCM : 0.2 W (Temp.=25 C) O .018(0.46) .010(0.26) : - 0.6 A C2 Collector -base voltage


    Original     		PDF MMDT4403 OT-363 021REF 026TYP 65TYP) -50mA 01-Jan-2006 -20mA 100MHz -150mA MMDT4403 transistor EB 525

    BC857S

    Abstract: No abstract text available
    Text: BC857S PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features .053(1.35) .045(1.15) .096(2.45) .085(2.15) Power dissipation PCM : 0.3 W (Tamp.= 25 C)


    Original     		PDF BC857S OT-363 026TYP 65TYP) 021REF 01-Jan-2006 BC857S

    UMH9N

    Abstract: No abstract text available
    Text: UMH9N NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 o .055 1.40 .047(1.20) 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features * Transistor elements are independent, eliminating interference. .018(0.46)


    Original     		PDF OT-363 026TYP 65TYP) 021REF 01-Jan-2006 UMH9N

    UMH11N

    Abstract: marking h11 H11 sot-363 DTC114E
    Text: UMH11N NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 Features .055 1.40 .047(1.20) * Mounting possible with UMT3 automatic mounting machines. o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Transistor elements are independent,


    Original     		PDF UMH11N OT-363 026TYP 65TYP) 021REF DTC114E 01-Jan-2006 UMH11N marking h11 H11 sot-363

    Untitled

    Abstract: No abstract text available
    Text: MMDT3904 NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055 1.40 .047(1.20) Power dissipation o .026TYP (0.65TYP) 8 o .021REF (0.525)REF PCM : 0.2 W (Tamp.= 25 C) O ICM .053(1.35 .045(1.15 .096(2.45)


    Original     		PDF MMDT3904 OT-363 026TYP 65TYP) 021REF 01-Jan-2006

    Untitled

    Abstract: No abstract text available
    Text: MMDT3906 PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055 1.40 .047(1.20) .021REF (0.525)REF Power dissipation. PCM : 0.2 W (Tamp.=25 C) O .018(0.46) .010(0.26) : - 0.2 A C2 Collector -base voltage


    Original     		PDF MMDT3906 OT-363 021REF 026TYP 65TYP) 01-Jan-2006

    MMDT3904

    Abstract: No abstract text available
    Text: MMDT3904 NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-363 * Features .055 1.40 .047(1.20) Power dissipation o .026TYP (0.65TYP) 8 o .021REF (0.525)REF PCM : 0.2 W (Tamp.= 25 C)


    Original     		PDF MMDT3904 OT-363 026TYP 65TYP) 021REF 06-May-2010 MMDT3904

    MMDT3906

    Abstract: transistor Vbe 1 Vbe 40 transistor
    Text: MMDT3906 PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 $VXIIL[RI&VSHFLILHVKDORJHQ OHDGIUHH * Features .055 1.40 .047(1.20) .021REF (0.525)REF Power dissipation. PCM : 0.2 W (Tamp.=25 C) O .018(0.46)


    Original     		PDF MMDT3906 OT-363 021REF 026TYP 65TYP) 06-May-2010 MMDT3906 transistor Vbe 1 Vbe 40 transistor