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    MULTI-EMITTER TRANSISTOR Search Results

    MULTI-EMITTER TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    MULTI-EMITTER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJE13003B

    Abstract: No abstract text available
    Text: WEITRON MJE13003B High Voltage Fast-switching NPN Power Transistor COLLECTOR 2. P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 3. BASE DESCRIPTION: 1. EMITTER The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching


    Original     		PDF MJE13003B MJE13003B 16-May-08 270TYP

    SD1060

    Abstract: No abstract text available
    Text: SD1060 RF & MICROWAVE TRANSISTORS VHF - UHF APPLICATIONS Features • • • • • 400 MHz 28 VOLTS POUT = 5.0 WATTS GP = 4.7 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: This silicon epitaxial NPN planar high frequency transistor employs a multi emitter electrode design. This feature together


    Original     		PDF SD1060 SD1060

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete XP0NG8A Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SWD) 0.2±0.05 Parameter Symbol Collector-base voltage (Emitter open) VCBO Collector-emitter voltage


    Original     		PDF 2002/95/EC)

    LM10

    Abstract: No abstract text available
    Text: Selection of MULTI-BEAM Components MULTI-BEAM sensors are made up of three components: scanner block, power block, and logic module. This is true for all MULTIBEAMs with the exception of opposed mode emitter units which require only a power block no logic module .


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Photocoupler SMD Type High Isolation Voltage High Collector To Emitter Voltage Type Sop Multi Photocoupler PS2703-1 SOP04 • Features Unit: mm ● High isolation voltage 4.5 MAX. ● High collector to emitter voltage 7.0±0.3 4.4 1.3 0.15+0.10 –0.05 ● High-speed switching


    Original     		PDF PS2703-1 PS2703-2, PS2703-4

    Untitled

    Abstract: No abstract text available
    Text: 2SC6145A Audio Amplification Transistor Features and Benefits Description LAPT High frequency multi emitter transistor Small package (TO-3P) High power handling capacity, 160 W Improved sound output by reduced on-chip impedance Complementary to 2SA2223A


    Original     		PDF 2SC6145A 2SA2223A

    Untitled

    Abstract: No abstract text available
    Text: 2SA2223A Audio Amplification Transistor Features and Benefits Description LAPT High frequency multi emitter transistor Small package (TO-3P) High power handling capacity, 160 W Improved sound output by reduced on-chip impedance Complementary to 2SC6145A


    Original     		PDF 2SA2223A 2SC6145A

    D44H11FP

    Abstract: No abstract text available
    Text: D44H11FP D45H11FP Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ ■ Power amplifier 3 1 Switching circuits TO-220FP Description The devices are manufactured in low voltage multi


    Original     		PDF D44H11FP D45H11FP O-220FP D44H11FP, D44H11FP

    PS2832-1-F3

    Abstract: PS2832-1 PS2832-1-F4 PS2832-4 PS2832-4-F3 PS2832-4-F4 PS2833-1 PS2833-1-F3 PS2833-4 PS2833-4-F3
    Text: HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE SOP MULTI OPTOCOUPLER PS2832-1,-4 PS2833-1,-4 FEATURES DESCRIPTION • HIGH COLLECTOR TO EMITTER VOLTAGE VCEO = 300 V : PS2832-1,-4 VCEO = 350 V : PS2833-1,-4 PS2832-1,-4 and PS2833-1,-4 are optically coupled isolators


    Original     		PDF PS2832-1 PS2833-1 16-pin PS2832-1-F3, PS2833-1-F3, PS2832-4-F3 PS2832-1-F3 PS2832-1-F4 PS2832-4 PS2832-4-F3 PS2832-4-F4 PS2833-1-F3 PS2833-4 PS2833-4-F3

    Untitled

    Abstract: No abstract text available
    Text: D44H11FP D45H11FP Complementary power transistors Preliminary data Features . • Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ ■ Power amplifier 3 1 Switching circuits TO-220FP Description The devices are manufactured in low voltage multi


    Original     		PDF D44H11FP D45H11FP O-220FP D45H11FP O-220FP

    D44H8

    Abstract: Part Marking TO-220 STMicroelectronics 4213 D44H11 D45H11 D45H8 ST MARKING to220
    Text: D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Fast switching speed TAB Applications ■ Power amplifier ■ Switching circuits 3 1 TO-220 Description The devices are manufactured in low voltage multi


    Original     		PDF D44H8 D44H11 D45H8 D45H11 O-220 D44H8 Part Marking TO-220 STMicroelectronics 4213 D44H11 D45H11 ST MARKING to220

    Untitled

    Abstract: No abstract text available
    Text: D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Fast switching speed TAB Applications ■ Power amplifier ■ Switching circuits 1 3 TO-220 Description The devices are manufactured in low voltage multi


    Original     		PDF D44H8 D44H11 D45H8 D45H11 O-220 D44H8

    2N6277 applications

    Abstract: No abstract text available
    Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6277 • High VCEO. • High DC Current Gain, hFE. • Low Collector-Emitter Saturation Voltage, VCE sat . • • • • Fast Switching. Hermetic TO3 Metal package. Ideally suited for Power Amplifier and Switching Applications.


    Original     		PDF 2N6277 O-204AE) 2N6277 applications

    Untitled

    Abstract: No abstract text available
    Text: 2SA2223 Audio Amplification Transistor Features and Benefits Description LAPT High frequency multi emitter transistor Small package (TO-3P) High power handling capacity, 160 W Improved sound output by reduced on-chip impedance For professional audio (PA) applications, VCEO = –260 V


    Original     		PDF 2SA2223 2SC6145 2SA1668A

    sanken audio

    Abstract: sanken LAPT "Sanken Rectifiers" "Sanken Electric"
    Text: 2SC6145 Audio Amplification Transistor Features and Benefits Description LAPT High frequency multi emitter transistor Small package (TO-3P) High power handling capacity, 160 W Improved sound output by reduced on-chip impedance For professional audio (PA) applications, VCEO = 260 V


    Original     		PDF 2SC6145 2SA2223 2SC4382A sanken audio sanken LAPT "Sanken Rectifiers" "Sanken Electric"

    MJ15003

    Abstract: mj15003 equivalent CP176 multi emitter transistor
    Text: PROCESS CP176 Central Power Transistor TM Semiconductor Corp. NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process MULTI EPITAXIAL PLANAR Die Size 203 x 227 MILS Die Thickness 12.5 ± 1.0 MILS Base Bonding Pad Area 38 x 76 MILS Emitter Bonding Pad Area


    Original     		PDF CP176 MJ15003 MJ15003 mj15003 equivalent CP176 multi emitter transistor

    transistor A25 SMD

    Abstract: smd transistor H-R
    Text: Photocoupler SMD/DIP Type High Isolation Voltage Single Transistor Type Multi Photocoupler Series PS2501-1,-2,-4, PS2501L-1,-2,-4 Features High isolation voltage BV = 5 000 Vr.m.s. High collector to emitter voltage (VCEO = 80 V) High-speed switching (tr = 3


    Original     		PDF PS2501-1 PS2501L-1 PS2501-4 PS2501-1 transistor A25 SMD smd transistor H-R

    2sd1070

    Abstract: No abstract text available
    Text: SD1070 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES This silicon epitaxial NPN planar high frequency transistor employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF


    Original     		PDF SD1070 SD1070 2sd1070

    mj15004

    Abstract: CP576 multi emitter transistor
    Text: PROCESS CP576 Central Power Transistor TM Semiconductor Corp. PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process MULTI EPITAXIAL PLANAR Die Size 203 x 227 MILS Die Thickness 12.5 ± 1.0 MILS Base Bonding Pad Area 38 x 76 MILS Emitter Bonding Pad Area


    Original     		PDF CP576 MJ15004 mj15004 CP576 multi emitter transistor

    marking 1c

    Abstract: smd 1C Transistors Diodes smd e2 smd diode marking 77 SMD MARKING E1 BC847S BC847S Application diode marking 1c E2 SMD Transistor KC847S
    Text: Transistors SMD Type NPN Multi-Chip General Purpose Amplifier KC847S BC847S SOT-363 1.3 Unit: mm +0.1 -0.1 0.65 0.525 Features +0.15 2.3-0.15 +0.1 1.25-0.1 High current gain 0.36 Low collector-emitter saturation voltage +0.05 0.1-0.02 +0.05 0.95-0.05 0.1max


    Original     		PDF KC847S BC847S) OT-363 marking 1c smd 1C Transistors Diodes smd e2 smd diode marking 77 SMD MARKING E1 BC847S BC847S Application diode marking 1c E2 SMD Transistor

    Untitled

    Abstract: No abstract text available
    Text: TPC6901A TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type TPC6901A High-Speed Switching Applications MOS Gate Drive Applications Unit: mm • NPN and PNP transistors are mounted on a compact and slim package. • High DC current gain • Low collector-emitter saturation voltage


    Original     		PDF TPC6901A

    PS2532

    Abstract: PS2532-1 LR7L
    Text: HIGH COLLECTOR TO EMITTER VOLTAGE DARLINGTON TRANSISTOR E t 'lV 2’, '4d TYPE MULTI PHOTOCOUPLER SERIES Pi,ZS3ZL'1’ 4 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 5 k Vr.m.s. MIN • HIGH COLLECTOR TO EMITTER VOLTAGE V c e o = 3 0 0 V MIN •


    OCR Scan     		PDF PS2532-1, PS2532L-1, TELECOMMUNICATI532-1 PS2532-2 PS2532-4 PS2532L-1 PS2532 PS2532-1 LR7L

    2SB1205

    Abstract: 2SB1143 2sc4675
    Text: SAfÊYO LOW-SATURATI ON VOLTAGE TR SERI ES Small-Signal Transistors. NO. 2 (*)MBIT process technology "New manufacturing method,Multi Base Island Transistors” For PNP, (-) sign is omitted. *:Tc=25’C. #:Contains base to emitter resistance(RBE). Type No.


    OCR Scan     		PDF 2SB764/2SD863 2SB892/2SD1207* 2SB927/2SD1247* 2SB985/2SD1347* 2SB1131* 2SD1145 2SA1641/2SC4306* 2SB1201/2SD1801* 2SB1202/2SD1802* 2SB1203/2SD1803* 2SB1205 2SB1143 2sc4675

    Untitled

    Abstract: No abstract text available
    Text: HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE MULTI OPTOCOUPLER SERIES DESCRIPTION_ FEATURES_ • HIGH ISOLATION VOLTAGE B V : 5000 Vr.m.s.: normal spec products • HIGH COLLECTOR TO EMITTER VOLTAGE Vceo:80 V MIN


    OCR Scan     		PDF PS2565-1, PS2565L-1, PS2565L-1 PS2565L-2 24-Hour