35N120D1
Abstract: D-68623 IXER 35N120D1
Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C
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35N120D1
247TM
E153432
35N120D1
D-68623
IXER 35N120D1
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Untitled
Abstract: No abstract text available
Text: MWI 25-12 E7 IC25 = 52 A = 1200 V VCES VCE sat typ. = 1.9 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA 13 1 5 9 2 6 10 3 7 11 4 17 8 12 16 15 14 Features IGBTs Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES IC25 IC80 TC = 25°C
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ds 35-12 e
Abstract: No abstract text available
Text: Advanced Technical Information MUBW 35-12 E7 Converter - Brake - Inverter Module CBI2 NPT3-IGBT 21 D11 D13 22 D15 D7 D1 T1 16 7 1 D12 2 D14 3 D16 T7 11 D3 T3 17 15 14 18 D2 D5 T5 8 5 12 NTC 19 6 T2 20 D4 T4 4 13 D6 T6 9 10 Three Phase Rectifier VRRM = 1600 V
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MUBW3512E7
ds 35-12 e
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E72873
Abstract: MJ 52 Diode
Text: MWI 25-12 E7 IC25 = 52 A = 1200 V VCES VCE sat typ. = 1.9 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA 13 1 5 9 2 6 10 3 7 11 4 17 8 12 16 15 14 E72873 See outline drawing for pin arrangement Features t IGBTs Maximum Ratings VCES TVJ = 25°C to 150°C
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E72873
E72873
MJ 52 Diode
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50-12BD
Abstract: D-68623
Text: FIO 50-12BD IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.0 V Bidirectional Switch with NPT3 IGBT and fast Diode Bridge in ISOPLUS i4-PACTM 3 2 1 1 4 5 5 Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C
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50-12BD
50-12BD
D-68623
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Untitled
Abstract: No abstract text available
Text: MWI 25-12 E7 IC25 = 52 A = 1200 V VCES VCE sat typ. = 1.9 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA 13 1 5 9 2 6 10 3 7 11 4 17 8 12 16 15 14 Features IGBTs Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES IC25 IC80 TC = 25°C
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D-68623
Abstract: No abstract text available
Text: FII 50-12E NPT3 IGBT phaseleg IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.0 V in ISOPLUS i4-PACTM 3 5 4 1 1 5 2 Features Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 1200 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH
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50-12E
D-68623
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D 35-12 equivalent
Abstract: ds 35-12 e
Text: MUBW 35-12 E7 Converter - Brake - Inverter Module CBI2 NPT3-IGBT 21 D11 D13 22 D15 D7 D1 T1 16 7 1 D12 2 D14 3 D16 T7 11 D3 T3 17 15 14 18 D2 D5 T5 8 5 12 NTC 19 6 T2 20 D4 T4 4 13 D6 T6 9 10 Three Phase Rectifier VRRM = 1600 V IFAVM = 42 A IFSM = 300 A
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MUBW3512E7
D 35-12 equivalent
ds 35-12 e
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DIODE 0644
Abstract: 35N120D1 IXER 35N120D1 diode RG 39
Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50A =1200V VCES VCE sat typ. = 2.2V in ISOPLUS247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate t Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol 1200 V ± 20 V -o VGES TC = 25°C TC = 90°C
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35N120D1
ISOPLUS247TM
247TM
E153432
DIODE 0644
35N120D1
IXER 35N120D1
diode RG 39
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35N120D1
Abstract: D-68623 8200T u2003
Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C
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35N120D1
247TM
E153432
35N120D1
D-68623
8200T
u2003
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160 e7
Abstract: E72873 t6910
Text: MUBW 35-12 E7 Converter - Brake - Inverter Module CBI2 NPT3-IGBT 21 D11 D13 22 D15 D7 D1 T1 16 7 1 2 3 18 D3 T3 17 15 20 D5 T5 NTC 8 19 6 5 4 D4 D6 E72873 D12 D14 D16 14 T7 11 D2 T2 12 T4 13 See outline drawing for pin arrangement T6 9 10 23 Three Phase
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E72873
MUBW3512E7
20070912a
160 e7
E72873
t6910
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E72873
Abstract: No abstract text available
Text: MWI 25-12 E7 IC25 = 52 A = 1200 V VCES VCE sat typ. = 1.9 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA 13 1 5 9 2 6 10 3 7 11 4 17 8 12 16 15 14 E72873 See outline drawing for pin arrangement Features IGBTs Symbol Conditions Maximum Ratings
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E72873
E72873
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40N120
Abstract: 40n120d 40N120D1 40N120 DATASHEET D-68623
Text: IXEH 40N120 IXEH 40N120D1 NPT3 IGBT IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.4 V C C G TO-247 AD G G E E C IXEH 40N120 E IXEH 40N120D1 Features t IGBT Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C
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40N120
40N120D1
O-247
40N120
40n120d
40N120D1
40N120 DATASHEET
D-68623
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50-12BD
Abstract: D-68623 TF010 400TD
Text: FIO 50-12BD IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.0 V Bidirectional Switch with NPT3 IGBT and fast Diode Bridge in ISOPLUS i4-PACTM 3 2 1 1 4 5 5 Features t IGBT Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM
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50-12BD
50-12BD
D-68623
TF010
400TD
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D-68623
Abstract: No abstract text available
Text: FII 50-12E NPT3 IGBT phaseleg IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.0 V in ISOPLUS i4-PACTM 3 5 4 1 1 5 2 Features IGBTs Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C
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50-12E
D-68623
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40N120
Abstract: 40N120 DATASHEET 40N120D1 160mJ D-68623 NS6002 40n120d
Text: IXEH 40N120 IXEH 40N120D1 NPT3 IGBT IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.4 V C C G TO-247 AD G G E E C IXEH 40N120 IXEH 40N120D1 E C (TAB) Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C
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40N120
40N120D1
O-247
40N120
40N120 DATASHEET
40N120D1
160mJ
D-68623
NS6002
40n120d
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35N120D1
Abstract: 35n120
Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C
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35N120D1
247TM
E153432
35N120D1
35n120
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T 3512 H diode
Abstract: diode T 3512 H ds 35-12 e E72873 6002e
Text: MUBW 35-12 E7 Converter - Brake - Inverter Module CBI2 NPT3-IGBT 21 D11 D13 22 D15 D7 D1 T1 16 7 1 2 3 18 D3 T3 17 15 20 D5 NTC T5 8 19 6 5 4 D4 D6 E72873 D12 D14 D16 14 T7 11 D2 T2 12 T4 13 See outline drawing for pin arrangement T6 9 10 24 Three Phase
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E72873
MUBW3512E7
20070912a
T 3512 H diode
diode T 3512 H
ds 35-12 e
E72873
6002e
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Untitled
Abstract: No abstract text available
Text: FII 50-12E NPT3 IGBT phaseleg IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.0 V in ISOPLUS i4-PACTM 3 5 4 1 1 5 2 Features Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C
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50-12E
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Untitled
Abstract: No abstract text available
Text: MUBW 35-12 E7 Converter - Brake - Inverter Module CBI2 NPT3-IGBT 21 D11 D13 22 D15 D7 D1 T1 16 7 1 D12 2 D14 3 D16 T7 11 D3 T3 17 15 14 18 D2 D5 T5 8 5 12 NTC 19 6 T2 20 D4 T4 4 13 D6 T6 9 10 Three Phase Rectifier VRRM = 1600 V IFAVM = 42 A IFSM = 300 A
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MUBW3512E7
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T 3512 H diode
Abstract: No abstract text available
Text: MUBW 35-12 E7 Converter - Brake - Inverter Module CBI2 NPT3-IGBT 21 D11 D13 22 D15 D7 D1 T1 16 7 1 D12 2 D14 D16 14 T7 11 T3 17 D2 T2 D5 20 NTC T5 8 19 6 15 3 D3 18 5 4 D4 D6 E72873 12 T4 13 See outline drawing for pin arrangement T6 9 10 24 Three Phase
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E72873
MUBW3512E7
20070912a
T 3512 H diode
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HIPERFAST IGBT WITH DIODE
Abstract: ds 35-12 e
Text: MUBW 35-12 E7 Converter - Brake - Inverter Module CBI2 NPT3-IGBT 21 D11 D13 22 D15 D7 D1 T1 16 7 1 D12 2 D14 3 D16 T7 11 D3 T3 17 15 14 18 D2 D5 T5 8 5 12 NTC 19 6 T2 20 D4 T4 4 13 D6 T6 9 10 Three Phase Rectifier VRRM = 1600 V IFAVM = 42 A IFSM = 300 A
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MUBW3512E7
HIPERFAST IGBT WITH DIODE
ds 35-12 e
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DIODE 0644
Abstract: 35N120D1
Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50A =1200V VCES VCE sat typ. = 2.2V in ISOPLUS247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES 1200 V ± 20 V IC25 IC90 TC = 25°C
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35N120D1
ISOPLUS247TM
247TM
E153432
DIODE 0644
35N120D1
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diode T 3512
Abstract: No abstract text available
Text: MUBW 35-12 E7 Converter - Brake - Inverter Module CBI2 NPT3-IGBT 21 D11 D13 22 D15 D7 D1 T1 16 7 1 D12 2 D14 3 D16 T7 11 D3 T3 17 15 14 18 D2 D5 T5 8 5 12 NTC 19 6 T2 20 D4 T4 4 13 D6 T6 9 10 Three Phase Rectifier VRRM = 1600 V IFAVM = 42 A IFSM = 300 A
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MUBW3512E7
diode T 3512
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