Untitled
Abstract: No abstract text available
Text: MT5C2561 256K X 1 SRAM I^ IIC R O ÍN J 256K X 1 SRAM SRAM PIN ASSIGNMENT Top View • High speed: 10*, 12’ , 15, 20, 25 and 35ns • High-performance, ow-power, CMOS double-metal process • Single +5V ±10% power supply Easy memory expansion with CE option
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MT5C2561
24-Pin
MTSC2561
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T2D 93
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b7E D • blll54T ÜQO'îEe? ñ'ÍQ BIMRN MICRON 256K SRAM MT5C2561 X 1 SR A M 256K X 1 SRAM • H igh speed: 1 0 ,1 2 ,1 5 ,2 0 ,2 5 and 35ns • High-perform ance, low-power, CM O S double-m etal process • Single +5V ±10% pow er supply_
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blll54T
MT5C2561
24-Pin
T2D 93
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Untitled
Abstract: No abstract text available
Text: MT5C2561 256K x 1 SRAM |U |IC = R O N SRAM 256K x 1 SRAM • High speed: 10,12,15, 20 and 25 • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE option • All inputs and outputs are TTL-compatible
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MT5C2561
MT5C2561DJ-15
24-Pin
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