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    MTP60N10E7L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MTP60N10E7L On Semiconductor TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate Original PDF

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    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP60N10E7L/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP60N10E7L TMOS E-FET. High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 60 AMPERES 100 VOLTS RDS on = 0.022 W This advanced TMOS E–FET is designed to withstand high


    Original     		PDF MTP60N10E7L/D MTP60N10E7L/D

    ultra low idss

    Abstract: pd 242 AN569 MTP60N10E7L transistor 600 volts.50 amperes
    Text: MOTOROLA Order this document by MTP60N10E7L/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTP60N10E7L TMOS E-FET. High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 60 AMPERES 100 VOLTS RDS on = 0.022 W This advanced TMOS E–FET is designed to withstand high


    Original     		PDF MTP60N10E7L/D MTP60N10E7L ultra low idss pd 242 AN569 MTP60N10E7L transistor 600 volts.50 amperes